BSZ0506NSATMA1

BSZ0506NSATMA1
Mfr. #:
BSZ0506NSATMA1
メーカー:
Infineon Technologies
説明:
MOSFET LV POWER MOS
ライフサイクル:
メーカー新製品
データシート:
BSZ0506NSATMA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
BSZ0506NSATMA1 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
PG-TSDSON-8
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
30 V
Id-連続ドレイン電流:
40 A
Rds On-ドレイン-ソース抵抗:
4.4 mOhms
Vgs th-ゲート-ソースしきい値電圧:
1.2 V
Vgs-ゲート-ソース間電圧:
10 V
Qg-ゲートチャージ:
11 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
27 W
構成:
独身
チャネルモード:
強化
商標名:
OptiMOS
包装:
リール
高さ:
1.1 mm
長さ:
3.3 mm
シリーズ:
OptiMOS 5
トランジスタタイプ:
1 N-Channel
幅:
3.3 mm
ブランド:
インフィニオンテクノロジーズ
フォワード相互コンダクタンス-最小:
49 S
立ち下がり時間:
2 ns
製品タイプ:
MOSFET
立ち上がり時間:
2.4 ns
ファクトリーパックの数量:
5000
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
13 ns
典型的なターンオン遅延時間:
2.3 ns
パーツ番号エイリアス:
BSZ0506NS SP001281636
単位重量:
0.001212 oz
Tags
BSZ0506, BSZ050, BSZ05, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
BSZ0506NS Series 30 V 40 A 4.4 mOhm OptiMOS™5 Power-MOSFET - TSDSON-8 FL
***el Electronic
In a Pack of 10, N-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON Infineon BSZ0506NSATMA1
***nell
MOSFET, N-CH, 30V, 40A, TSDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 27W; Transistor Case Style: TSDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation, PG-TSDSON-8, RoHS
***ineon
With the new OptiMOS 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. | Summary of Features: Best-in-class on-state resistance; Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd); RoHS compliant and halogen free; Optimized EMI behavior (integrated damping network) | Benefits: Highest efficiency; Highest power density with S3O8 or Power Block package; Reduction of overall system costs; Operation at high-switching frequency | Target Applications: Desktop and server; Single-phase and multiphase POL; CPU/GPU VR in notebooks; High power density voltage regulator; Or-ing; E-fuse
***ure Electronics
FDMS0309AS Series 30 V 49 A 3.5 mOhm N-Channel Power Trench SyncFET - POWER-56
*** Stop Electro
Power Field-Effect Transistor, 21A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0309AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***emi
N-Channel PowerTrench® SyncFET™ 30V, 42A, 4mΩ
*** Stop Electro
Power Field-Effect Transistor, 19A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0310S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***emi
N-Channel PowerTrench® SyncFET™ MOSFET 30V, 42A, 3.5mΩ
***ure Electronics
N-Channel 30 V 3.5 mOhm Surface Mount PowerTrench Mosfet - Power 56
***rchild Semiconductor
The FDMS8670S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***nell
MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:20A; Resistance, Rds On:0.0035ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.5V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:200A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS8670S; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V
***ure Electronics
Single N-Channel 30 V 0.0031 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
*** Source Electronics
MOSFET N-CH 30V 50A PPAK SO-8 / Trans MOSFET N-CH 30V 29.5A 8-Pin PowerPAK SO EP T/R
***ment14 APAC
MOSFET, N-CH, 30V, 50A, POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:69W; Voltage Vgs Max:20V
***(Formerly Allied Electronics)
SISS27DN-T1-GE3 P-channel MOSFET Transistor; 23 A; 30 V; 8-Pin PowerPAK 1212
***ical
Trans MOSFET P-CH 30V 50A 8-Pin PowerPAK 1212-S T/R
***ure Electronics
SiSS27DN Series 30 V 50 A 57 W P-Channel Mosfet - PowerPAK® 1212-8S
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ark
P-Chan PowerPAK1212 BWL 30V [email protected]
***ure Electronics
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
***et
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R
***nell
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
モデル メーカー 説明 ストック 価格
BSZ0506NSATMA1
DISTI # V72:2272_06384846
Infineon Technologies AGTrans MOSFET N-CH 30V 40A 8-Pin TSDSON EP T/R0
    BSZ0506NSATMA1
    DISTI # V36:1790_06384846
    Infineon Technologies AGTrans MOSFET N-CH 30V 40A 8-Pin TSDSON EP T/R0
    • 5000000:$0.2842
    • 2500000:$0.2845
    • 500000:$0.3049
    • 50000:$0.3400
    • 5000:$0.3459
    BSZ0506NSATMA1
    DISTI # BSZ0506NSATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 30V 15A 8TSDSON
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    4922In Stock
    • 1000:$0.3958
    • 500:$0.5014
    • 100:$0.6069
    • 10:$0.7780
    • 1:$0.8700
    BSZ0506NSATMA1
    DISTI # BSZ0506NSATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 30V 15A 8TSDSON
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    4922In Stock
    • 1000:$0.3958
    • 500:$0.5014
    • 100:$0.6069
    • 10:$0.7780
    • 1:$0.8700
    BSZ0506NSATMA1
    DISTI # BSZ0506NSATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 30V 15A 8TSDSON
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape & Reel (TR)
    On Order
    • 25000:$0.3245
    • 10000:$0.3331
    • 5000:$0.3459
    BSZ0506NSATMA1
    DISTI # SP001281636
    Infineon Technologies AGTrans MOSFET N-CH 30V 40A 8-Pin TSDSON T/R (Alt: SP001281636)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel
    Europe - 5000
    • 50000:€0.2769
    • 30000:€0.2989
    • 20000:€0.3239
    • 10000:€0.3529
    • 5000:€0.4319
    BSZ0506NSATMA1
    DISTI # BSZ0506NSATMA1
    Infineon Technologies AGTrans MOSFET N-CH 30V 40A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ0506NSATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 50000:$0.3099
    • 30000:$0.3149
    • 20000:$0.3259
    • 10000:$0.3379
    • 5000:$0.3509
    BSZ0506NSATMA1
    DISTI # 13AC8351
    Infineon Technologies AGMOSFET, N-CH, 30V, 40A, TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0035ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes4500
    • 1000:$0.3950
    • 500:$0.4280
    • 250:$0.4600
    • 100:$0.4930
    • 50:$0.5830
    • 25:$0.6740
    • 10:$0.7650
    • 1:$0.9190
    BSZ0506NSATMA1Infineon Technologies AGBSZ0506NS Series 30 V 40 A 4.4 mOhm OptiMOS5 Power-MOSFET - TSDSON-8 FL
    RoHS: Compliant
    140Cut Tape/Mini-Reel
    • 1:$0.4300
    • 100:$0.3800
    • 250:$0.3700
    • 500:$0.3600
    • 1500:$0.3500
    BSZ0506NSATMA1
    DISTI # 726-BSZ0506NSATMA1
    Infineon Technologies AGMOSFET LV POWER MOS
    RoHS: Compliant
    4412
    • 1:$0.9100
    • 10:$0.7570
    • 100:$0.4880
    • 1000:$0.3910
    • 5000:$0.3300
    • 10000:$0.3180
    • 25000:$0.3050
    BSZ0506NSATMA1
    DISTI # 1336708
    Infineon Technologies AGMOSFET OPTIMOS5 30V 40A 4.4MOHM TSDSON8, RL4960
    • 10000:£0.2090
    • 5000:£0.2140
    BSZ0506NSATMA1
    DISTI # 2725823
    Infineon Technologies AGMOSFET, N-CH, 30V, 40A, TSDSON
    RoHS: Compliant
    4500
    • 1000:$0.6340
    • 500:$0.8020
    • 100:$1.0500
    • 10:$1.3200
    • 1:$1.4800
    BSZ0506NSATMA1
    DISTI # 2725823
    Infineon Technologies AGMOSFET, N-CH, 30V, 40A, TSDSON4547
    • 500:£0.3260
    • 250:£0.3510
    • 100:£0.3760
    • 10:£0.6370
    • 1:£0.8020
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    WASHER ROHS COMPLIANT: YES
    可用性
    ストック:
    Available
    注文中:
    1987
    数量を入力してください:
    BSZ0506NSATMA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $0.91
    $0.91
    10
    $0.76
    $7.57
    100
    $0.49
    $48.80
    1000
    $0.39
    $391.00
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