T2G6000528-Q3 28V

Mfr. #:: T2G6000528-Q3 28V
メーカー:: Qorvo
説明:: RF JFET Transistors DC-6.0GHz 10 Watt 28V GaN
ライフサイクル:: メーカー新製品
データシート:: T2G6000528-Q3 28V データシート
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ECAD Model:
詳しくは:: T2G6000528-Q3 28V 詳しくは

製品属性
属性値

メーカー：: カーボ

製品カテゴリ：: RFJFETトランジスタ

JBoss：: Y

トランジスタタイプ：: HEMT

テクノロジー：: GaN SiC

包装：: トレイ

シリーズ：: T2G

ブランド：: カーボ

感湿性：: はい

製品タイプ：: RFJFETトランジスタ

ファクトリーパックの数量：: 100

サブカテゴリ：: トランジスタ

パーツ番号エイリアス：: 1099997

Tags: T2G6000528-Q, T2G6000, T2G6, T2G

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

T2G6000528-Q3 28V 詳しくは

T2G GaN HEMT Transistors: QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

モデル	メーカー	説明	ストック	価格
T2G6000528-Q3 28V DISTI # 772-T2G6000528-Q328V	Qorvo	RF JFET Transistors DC-6.0GHz 10 Watt 28V GaN RoHS: Compliant	75	1:$80.4000 25:$68.0500 100:$57.6000

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