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IRFHS9301TRPBF

IRFHS9301TRPBF
Mfr. #:
IRFHS9301TRPBF
メーカー:
Infineon Technologies
説明:
MOSFET 1 P-CH -30V HEXFET 37mOhms 6.9nC
ライフサイクル:
メーカー新製品
データシート:
IRFHS9301TRPBF データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFHS9301TRPBF DatasheetIRFHS9301TRPBF Datasheet (P4-P6)IRFHS9301TRPBF Datasheet (P7-P9)
ECAD Model:
詳しくは:
IRFHS9301TRPBF 詳しくは
製品属性
属性値
メーカー：
インフィニオン
製品カテゴリ：
MOSFET
JBoss：
Y
テクノロジー：
Si
取り付けスタイル：
SMD / SMT
パッケージ/ケース：
PQFN-6
チャネル数：
1 Channel
トランジスタの極性：
Pチャネル
Vds-ドレイン-ソース間降伏電圧：
30 V
Id-連続ドレイン電流：
13 A
Rds On-ドレイン-ソース抵抗：
65 mOhms
Vgs-ゲート-ソース間電圧：
20 V
Qg-ゲートチャージ：
6.9 nC
Pd-消費電力：
2.1 W
構成：
独身
包装：
リール
高さ：
0.9 mm
長さ：
2 mm
トランジスタタイプ：
1 P-Channel
幅：
2 mm
ブランド：
インフィニオンテクノロジーズ
製品タイプ：
MOSFET
ファクトリーパックの数量：
4000
サブカテゴリ：
MOSFET
パーツ番号エイリアス：
SP001556616
Tags
IRFHS930, IRFHS9, IRFHS, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
P CH MOSFET, -30V, -6A, 6-PQFN; Transistor Polarity:P Channel; Continuous Drain
***el Electronic
INFINEON IRFHS9301TRPBF MOSFET Transistor, P Channel, -13 A, -30 V, 0.03 ohm, -10 V, -1.8 VNew
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a PQFN 2mm x 2mm package, PG-TSDSON-6, RoHS
***ure Electronics
Single P-Channel 30 V 65 mOhm 6.9 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
*** Source Electronics
Trans MOSFET P-CH 30V 6A 6-Pin PQFN EP T/R / MOSFET P-CH 30V 6A PQFN
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.0 mm); Compatible with Existing Surface Mount Techniques; Low Junction to PCB Thermal Resistance; Qualified Industrial; Qualified MSL1; P-Channel MOSFET | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
*** Electronics
INFINEON IRFHS8342TRPBF MOSFET Transistor, N Channel, 8.8 A, 30 V, 0.013 ohm, 10 V, 1.8 VNew
***roFlash
Single N-Channel 30 V 16 mOhm 4.2 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS
***et
Trans MOSFET N-CH 30V 8.8A 6-Pin PQFN EP T/R
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: PQFN-6 (2x2) Polarity: N Variants: Enhancement mode Power dissipation: 2.1 W
***ment14 APAC
N CH MOSFET, 30V, 8.8A, 6-PQFN; Transist; N CH MOSFET, 30V, 8.8A, 6-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:8.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; No. of Pins:6
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.0 mm); Compatible with Existing Surface Mount Techniques; Low Junction to PCB Thermal Resistance; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; DC Switches; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ure Electronics
Single N-Channel 25 V 21 mOhm 4.3 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS
***Yang
Trans MOSFET N-CH 25V 9.9A 6-Pin PQFN EP T/R - Tape and Reel
***ment14 APAC
N CH MOSFET, 25V, 9.9A, 6-PQFN; Transist; N CH MOSFET, 25V, 9.9A, 6-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:25V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; No. of Pins:6
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.0 mm); Compatible with Existing Surface Mount Techniques; Low Junction to PCB Thermal Resistance; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; DC Switches; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch; Load Switch High Side; Load Switch Low Side; MultiPhase ControlFET; Point of Load ControlFET
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 8.5 / Drain-Source Voltage (Vds) V = 25 / ON Resistance (Rds(on)) mOhm = 13 / Gate-Source Voltage V = 20 / Fall Time ns = 5.3 / Rise Time ns = 19 / Turn-OFF Delay Time ns = 5.4 / Turn-ON Delay Time ns = 6.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.1
***ure Electronics
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
***Yang
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R - Tape and Reel
***nell
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***Yang
Transistor MOSFET Array Dual P-CH 30V 3.4A 6-Pin PQFN T/R - Tape and Reel
***ineon SCT
-30V Dual P-Channel HEXFET Power MOSFET in a PQFN 2mm x 2mm package, PG-TSDSON-6, RoHS
***ure Electronics
Dual P-Channel 30 V 170 mOhm 1.9 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
*** Electronics
INFINEON IRFHS9351TRPBF Dual MOSFET, Dual P Channel, -5.1 A, -30 V, 0.135 ohm, -10 V, -1.8 VNew
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.0 mm); Compatible with Existing Surface Mount Techniques; Qualified MSL1; Dual P-Channel MOSFET | Target Applications: DC Switches; Load Switch
***ment14 APAC
DUAL P CH, -30V, -2.3A, 6-PQFN; Transist; DUAL P CH, -30V, -2.3A, 6-PQFN; Transistor Polarity:P Channel; Continuous Drain Current Id, P Channel:-2.3A; Drain Source Voltage Vds, P Channel:-30V; On Resistance Rds(on), P Channel:0.135ohm; Rds(on) Test Voltage Vgs:-10V
***ure Electronics
Single N-Channel 30 V 4.5 mOhm 16 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***Yang
Trans MOSFET N-CH 30V 22A 8-Pin PQFN T/R - Tape and Reel
***nell
MOSFET, N-CH, 30V, 79A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 79A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 46W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 79 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.5 / Gate-Source Voltage V = 20 / Fall Time ns = 6.6 / Rise Time ns = 25 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 46
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
***(Formerly Allied Electronics)
MOSFET, 30V, 40A, 4.3 MOHM, 13 NC QG, 1.1 OHM RG, MONOFETKY, PQFN 3.3X3.3
***ment14 APAC
MOSFET,N CH,SCH DIODE,30V,20A,PQFN33; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):3400µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20A; Power Dissipation Pd:2.8W; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Schottky intrinsic diode with low forward voltage; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
Ultra Compact PQFN HEXFET® Power MOSFETs
Infineon Ultra Compact PQFN HEXFET® Power MOSFETs deliver an ultra-compact, high density and efficient solution for a wide variety of lower power applications including smart phones, tablet PCs, camcorders, digital still cameras, notebook PC, server and network communications equipment. These Ultra Compact PQFN HEXFET® Power MOSFETs come in a 2x2mm package and are available in 20 V, 25 V and 30 V with standard or logic level gate drive. They utilize Infineon latest low voltage N-Channel and P-Channel silicon technologies to offer very low on-resistance (RDS(on)), and high power density.Learn More
モデル メーカー 説明 ストック 価格
IRFHS9301TRPBF
DISTI # V72:2272_13890779		Infineon Technologies AGTrans MOSFET P-CH 30V 6A 6-Pin PQFN EP T/R
RoHS: Compliant		8000
  • 6000:$0.1776
  • 3000:$0.2059
  • 1000:$0.2080
  • 500:$0.2225
  • 250:$0.2472
  • 100:$0.2567
  • 25:$0.3449
  • 10:$0.3647
  • 1:$0.4201
IRFHS9301TRPBF
DISTI # IRFHS9301TRPBFCT-ND		Infineon Technologies AGMOSFET P-CH 30V 6A PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		9935In Stock
  • 1000:$0.3013
  • 500:$0.3693
  • 100:$0.4883
  • 10:$0.6240
  • 1:$0.7100
IRFHS9301TRPBF
DISTI # IRFHS9301TRPBFDKR-ND		Infineon Technologies AGMOSFET P-CH 30V 6A PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		9935In Stock
  • 1000:$0.3013
  • 500:$0.3693
  • 100:$0.4883
  • 10:$0.6240
  • 1:$0.7100
IRFHS9301TRPBF
DISTI # IRFHS9301TRPBFTR-ND		Infineon Technologies AGMOSFET P-CH 30V 6A PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		8000In Stock
  • 4000:$0.2677
IRFHS9301TRPBF
DISTI # 29572342		Infineon Technologies AGTrans MOSFET P-CH 30V 6A 6-Pin PQFN EP T/R
RoHS: Compliant		8000
  • 6000:$0.1776
  • 3000:$0.2059
  • 1000:$0.2080
  • 500:$0.2225
  • 250:$0.2472
  • 100:$0.2567
  • 38:$0.3449
IRFHS9301TRPBF
DISTI # 31087175		Infineon Technologies AGTrans MOSFET P-CH 30V 6A 6-Pin PQFN EP T/R
RoHS: Compliant		4000
  • 4000:$0.2675
IRFHS9301TRPBF
DISTI # 30611000		Infineon Technologies AGTrans MOSFET P-CH 30V 6A 6-Pin PQFN EP T/R
RoHS: Compliant		3800
  • 1000:$0.3085
  • 500:$0.3404
  • 100:$0.4029
  • 50:$0.4399
  • 39:$0.6604
IRFHS9301TRPBF
DISTI # IRFHS9301TRPBF		Infineon Technologies AGTrans MOSFET P-CH 30V 6A 6-Pin PQFN EP T/R (Alt: IRFHS9301TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
  • 4000:$0.1400
  • 8000:$0.1343
  • 12000:$0.1325
  • 20000:$0.1273
  • 40000:$0.1257
  • 100000:$0.1225
  • 200000:$0.1195
IRFHS9301TRPBF
DISTI # IRFHS9301TRPBF		Infineon Technologies AGTrans MOSFET P-CH 30V 6A 6-Pin PQFN EP T/R - Tape and Reel (Alt: IRFHS9301TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.1719
  • 8000:$0.1659
  • 16000:$0.1599
  • 24000:$0.1549
  • 40000:$0.1519
IRFHS9301TRPBF
DISTI # SP001556616		Infineon Technologies AGTrans MOSFET P-CH 30V 6A 6-Pin PQFN EP T/R (Alt: SP001556616)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 4000:€0.2809
  • 8000:€0.2379
  • 16000:€0.2119
  • 24000:€0.1909
  • 40000:€0.1769
IRFHS9301TRPBF
DISTI # 91Y4686		Infineon Technologies AGMOSFET, P-CH, -30V, -13A, PQFN-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-13A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.03ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.8V,Power RoHS Compliant: Yes2935
  • 1:$0.5600
  • 10:$0.4650
  • 25:$0.4100
  • 50:$0.3550
  • 100:$0.3000
  • 250:$0.2800
  • 500:$0.2600
  • 1000:$0.2400
IRFHS9301TRPBF
DISTI # 70411479		Infineon Technologies AGIRFHS9301TRPBF P-channel MOSFET Transistor,6 A,30 V,7-Pin PQFN
RoHS: Compliant		0
  • 10:$0.5600
IRFHS9301TRPBFInfineon Technologies AGSingle P-Channel 30 V 65 mOhm 6.9 nC HEXFET Power Mosfet - PQFN 2 x 2 mm
RoHS: Compliant		4000Cut Tape/Mini-Reel
  • 1:$0.2450
  • 100:$0.2150
  • 250:$0.2100
  • 500:$0.2050
  • 1500:$0.1940
IRFHS9301TRPBF
DISTI # 942-IRFHS9301TRPBF		Infineon Technologies AGMOSFET 1 P-CH -30V HEXFET 37mOhms 6.9nC
RoHS: Compliant		10103
  • 1:$0.5600
  • 10:$0.4650
  • 100:$0.3000
  • 1000:$0.2400
IRFHS9301TRPBF
DISTI # 7377310P		Infineon Technologies AGMOSFET P-CHANNEL 30V 6A HEXFET PQFN6EP, RL20000
  • 50:£0.3140
  • 100:£0.2370
  • 200:£0.2250
  • 500:£0.2140
IRFHS9301TRPBF
DISTI # 2580013		Infineon Technologies AGMOSFET, P-CH, -30V, -13A, PQFN-8
RoHS: Compliant		6945
  • 5:£0.4020
  • 25:£0.3170
  • 100:£0.2270
  • 250:£0.2220
  • 500:£0.2160
IRFHS9301TRPBF
DISTI # XSFP00000156041		Infineon Technologies AG 
RoHS: Compliant		13460
  • 4000:$0.5100
  • 13460:$0.4636
IRFHS9301TRPBF
DISTI # C1S322000600094		Infineon Technologies AGTrans MOSFET P-CH 30V 6A 6-Pin PQFN EP T/R
RoHS: Compliant		3800
  • 1000:$0.2420
  • 500:$0.2670
  • 100:$0.3160
  • 50:$0.3450
  • 10:$0.5180
IRFHS9301TRPBF
DISTI # C1S322000595312		Infineon Technologies AGTrans MOSFET P-CH 30V 6A 6-Pin PQFN EP T/R
RoHS: Compliant		8000
  • 250:$0.2320
  • 100:$0.2577
  • 25:$0.3657
  • 10:$0.3663
IRFHS9301TRPBF
DISTI # 2580013		Infineon Technologies AGMOSFET, P-CH, -30V, -13A, PQFN-8
RoHS: Compliant		6935
  • 1:$0.8870
  • 10:$0.7370
  • 100:$0.4750
画像 モデル 説明
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TS31223-QFNR

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 IC REG LINEAR POS ADJ 60MA 8DFN
0435.500KR

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 Surface Mount Fuses 32V .5A 0402 Very Fast Acting
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可用性
ストック:
Available
注文中:
1992
数量を入力してください:
IRFHS9301TRPBFの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格（USD）
量
単価
小計金額
1
$0.56
$0.56
10
$0.46
$4.65
100
$0.30
$30.00
1000
$0.24
$240.00
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