We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| IPB120N03S4L03ATMA1 DISTI # IPB120N03S4L03ATMA1-ND | Infineon Technologies AG | MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| IPB120N03S4L03ATMA1 DISTI # IPB120N03S4L03ATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N03S4L03ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB120N03S4L03ATMA1 DISTI # IPB120N03S4L03ATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB120N03S4L03ATMA1) Min Qty: 582 Container: Bulk | Americas - 0 | |
| IPB120N03S4L03ATMA1 DISTI # 726-IPB120N03S4L03AT | Infineon Technologies AG | MOSFET N-CHANNEL_30/40V | 0 |
|
| RFD20N03SM9A DISTI # 512-RFD20N03SM9A | ON Semiconductor | MOSFET 30V Single RoHS: Not compliant | 0 | |
| IPB120N03S4L03ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 120A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 15000 |
|
| RFD20N03SM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 4911 |
|
| RFD20N03SM9AR4770 | Fairchild Semiconductor Corporation | RoHS: Not Compliant | 1578 |
|
| RFD20N03SM | Harris Semiconductor | Power Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 8441 |
|
| RFD20N03SM9A | Harris Semiconductor | Power Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 2500 |
|
| RFD20N03SM9AR4761 | Harris Semiconductor | RoHS: Not Compliant | 2500 |
|
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: 20N0125FS OMO.#: OMO-20N0125FS-1190 |
ブランドニューオリジナル |
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Mfr.#: 20N03L-TN3-R OMO.#: OMO-20N03L-TN3-R-1190 |
ブランドニューオリジナル |
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Mfr.#: 20N0520 OMO.#: OMO-20N0520-1190 |
ブランドニューオリジナル |
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Mfr.#: 20N2000FS OMO.#: OMO-20N2000FS-1190 |
ブランドニューオリジナル |
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Mfr.#: 20N30LH OMO.#: OMO-20N30LH-1190 |
ブランドニューオリジナル |
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Mfr.#: 20N5000FS OMO.#: OMO-20N5000FS-1190 |
ブランドニューオリジナル |
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Mfr.#: 20N60A4 OMO.#: OMO-20N60A4-1190 |
ブランドニューオリジナル |
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Mfr.#: 20N60CFD OMO.#: OMO-20N60CFD-1190 |
Transistor: N-MOSFET, unipolar, 600V, 13.1A, 208W, PG-TO220-3 |
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Mfr.#: 20N65M5 TK17A65D OMO.#: OMO-20N65M5-TK17A65D-1190 |
ブランドニューオリジナル |
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Mfr.#: 20NE06 OMO.#: OMO-20NE06-1190 |
ブランドニューオリジナル |