IPB60R600CP

Mfr. #:: IPB60R600CP
メーカー:: Rochester Electronics, LLC
説明:: IGBT Transistors MOSFET N-Ch 600V 6.1A D2PAK-2 CoolMOS CP
ライフサイクル:: メーカー新製品
データシート:: IPB60R600CP データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

メーカー: インフィニオン

製品カテゴリ: FET-シングル

シリーズ: CoolMOS CP

包装: リール

パーツエイリアス: IPB60R600CPATMA1 SP000405892

単位重量: 0.139332 oz

取り付けスタイル: SMD / SMT

商標名: CoolMOS

パッケージ-ケース: TO-252-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 60 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 17 ns

立ち上がり時間: 12 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 6.1 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 600 V

Vgs-th-Gate-Source-Threshold-Voltage: 3.5 V

Rds-On-Drain-Source-Resistance: 600 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 75 ns

典型的なターンオン遅延時間: 17 ns

Qg-Gate-Charge: 21 nC

チャネルモード: 強化

Tags: IPB60R600C, IPB60R6, IPB60R, IPB60, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB60R600CP 説明

***et: Trans MOSFET N-CH 650V 6.1A 3-Pin TO-263 T/R

***i-Key: MOSFET N-CH 600V 6.1A TO263

***ark: MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:6.1A; On State Resistance:0.6ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:6.1A; Drain Source Voltage Vds:650V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:6.1A; Package / Case:TO-263; Power Dissipation Pd:60W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***nell: MOSFET, N, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6.1A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.54ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:60W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:6.1A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:650V; Tensione Vgs Max:20V; Tensione Vgs di Misurazione Rds on:10V; Tipo di Terminazione:Dispositivo a Montaggio Superficiale; Tipo di Transistor:Power MOSFET

Market price

モデル	メーカー	説明	ストック	価格
IPB60R600CPATMA1 DISTI # IPB60R600CPATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 6.1A TO263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IPB60R600CPATMA1 DISTI # IPB60R600CPATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 6.1A TO263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPB60R600CPATMA1 DISTI # IPB60R600CPATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 6.1A TO263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPB60R600CP	Infineon Technologies AG	Power Field-Effect Transistor, 6.1A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	6970	1000:$0.7100 500:$0.7400 100:$0.7700 25:$0.8100 1:$0.8700
IPB60R600CP DISTI # 726-IPB60R600CP	Infineon Technologies AG	MOSFET N-Ch 600V 6.1A D2PAK-2 CoolMOS CP RoHS: Compliant	874	1:$2.0800 10:$1.6100 100:$1.4600 250:$1.3100 500:$1.1300 1000:$0.9540 2000:$0.7930 5000:$0.7750 10000:$0.7460

画像	モデル	説明
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	Mfr.#: IPB60R125C6ATMA1 OMO.#: OMO-IPB60R125C6ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 30A TO263
	Mfr.#: IPB60R380C6 . OMO.#: OMO-IPB60R380C6--1190	ブランドニューオリジナル
	Mfr.#: IPB60R380C6S OMO.#: OMO-IPB60R380C6S-1190	ブランドニューオリジナル

IPB60R600CP

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes