CSD19536KTTT

Mfr. #:: CSD19536KTTT
説明:: IGBT Transistors MOSFET 100V N-Channel NexFET Power MOSFET
ライフサイクル:: メーカー新製品
データシート:: CSD19536KTTT データシート
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ECAD Model:
詳しくは:: CSD19536KTTT 詳しくは CSD19536KTTT Product Details

製品属性
属性値

メーカー: テキサスインスツルメンツ

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: CSD19536KTT

包装: リール

単位重量: 0.068654 oz

取り付けスタイル: SMD / SMT

商標名: NexFET

パッケージ-ケース: TO-263-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 375 W

最高作動温度: + 175 C

最低作動温度: - 55 C

立ち下がり時間: 6 ns

立ち上がり時間: 8 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 200 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 100 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.1 V

Rds-On-Drain-Source-Resistance: 2.8 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 32 ns

典型的なターンオン遅延時間: 13 ns

Qg-Gate-Charge: 118 nC

フォワード-相互コンダクタンス-最小: 329 S

チャネルモード: 強化

Tags: CSD19536K, CSD19536, CSD1953, CSD19, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD19536KTTT 詳しくは

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

モデル	説明	ストック	価格
CSD19536KTTT DISTI # 296-41136-1-ND	MOSFET N-CH 100V 200A TO263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3034In Stock	10:$5.3960 1:$6.0400
CSD19536KTTT DISTI # 296-41136-6-ND	MOSFET N-CH 100V 200A TO263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3034In Stock	10:$5.3960 1:$6.0400
CSD19536KTTT DISTI # 296-41136-2-ND	MOSFET N-CH 100V 200A TO263 RoHS: Compliant Min Qty: 50 Container: Tape & Reel (TR)	3000In Stock	250:$3.8767 100:$4.2958 50:$4.7148
CSD19536KTTT DISTI # CSD19536KTTT	Trans MOSFET N-CH 100V 200A 3-Pin TO-263 T/R (Alt: CSD19536KTTT) RoHS: Compliant Min Qty: 50 Container: Tape and Reel	Asia - 0
CSD19536KTTT DISTI # CSD19536KTTT	Trans MOSFET N-CH 100V 200A 3-Pin TO-263 T/R - Tape and Reel (Alt: CSD19536KTTT) RoHS: Compliant Min Qty: 150 Container: Reel	Americas - 0	150:$2.6900 250:$2.5900 400:$2.4900 750:$2.3900 1500:$2.2900
CSD19536KTTT	CSD19536KTT 100 V N-Channel NexFET&#153,Power MOSFET	3414	1000:$2.1700 750:$2.2100 500:$2.5500 250:$2.9300 100:$3.1400 25:$3.5100 10:$3.7500 1:$4.1700
CSD19536KTTT DISTI # 595-CSD19536KTTT	MOSFET 100V N-Channel NexFET Power MOSFET RoHS: Compliant	1708	1:$5.0400 10:$4.5300 50:$4.5300 100:$3.7100 250:$3.4800 500:$3.1600
CSD19536KTT DISTI # 595-CSD19536KTT	MOSFET CSD19536KTT 100 V N-Channel NexFET Power MOSFET 3-DDPAK/TO-263 RoHS: Compliant	60	1:$4.4800 10:$4.0300 100:$3.3000 250:$3.0900 500:$2.8100
CSD19536KTTT DISTI # 9009857P	NEXFET N-CHANNEL MOSFET 100V 190A TO220, RL	256	10:£3.3000 25:£3.1600 50:£3.0300

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