IPW65R190C7XKSA1

IPW65R190C7XKSA1
Mfr. #:
IPW65R190C7XKSA1
メーカー:
Infineon Technologies
説明:
MOSFET HIGH POWER_NEW
ライフサイクル:
メーカー新製品
データシート:
IPW65R190C7XKSA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
IPW65R190C7XKSA1 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-247-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
650 V
Id-連続ドレイン電流:
13 A
Rds On-ドレイン-ソース抵抗:
168 mOhms
Vgs th-ゲート-ソースしきい値電圧:
3 V
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
23 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
72 W
構成:
独身
チャネルモード:
強化
商標名:
CoolMOS
包装:
チューブ
高さ:
21.1 mm
長さ:
16.13 mm
シリーズ:
CoolMOS C7
トランジスタタイプ:
1 N-Channel
幅:
5.21 mm
ブランド:
インフィニオンテクノロジーズ
立ち下がり時間:
9 ns
製品タイプ:
MOSFET
立ち上がり時間:
11 ns
ファクトリーパックの数量:
240
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
54 ns
典型的なターンオン遅延時間:
11 ns
パーツ番号エイリアス:
IPW65R190C7 SP001080142
単位重量:
1.340411 oz
Tags
IPW65R190C, IPW65R19, IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET N-Channel 650V 13A 3-Pin TO-247 Tube
***nell
MOSFET, N-CH, 650V, 24A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.404ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO247-3, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
モデル メーカー 説明 ストック 価格
IPW65R190C7XKSA1
DISTI # 33259064
Infineon Technologies AGTrans MOSFET N-CH 650V 13A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
240
  • 240:$1.6320
IPW65R190C7XKSA1
DISTI # IPW65R190C7XKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 20.2A TO247
RoHS: Compliant
Min Qty: 240
Container: Tube
Temporarily Out of Stock
  • 240:$2.6679
IPW65R190C7XKSA1
DISTI # V36:1790_06378141
Infineon Technologies AGTrans MOSFET N-CH 650V 13A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
0
  • 240000:$1.5180
  • 120000:$1.5210
  • 24000:$1.8410
  • 2400:$2.4300
  • 240:$2.5300
IPW65R190C7XKSA1
DISTI # SP001080142
Infineon Technologies AGTrans MOSFET N-CH 700V 13A 3-Pin TO-247 Tube (Alt: SP001080142)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 720
  • 1000:€1.3900
  • 500:€1.4900
  • 50:€1.5900
  • 100:€1.5900
  • 25:€1.6900
  • 10:€1.7900
  • 1:€1.8900
IPW65R190C7XKSA1
DISTI # IPW65R190C7XKSA1
Infineon Technologies AGTrans MOSFET N-CH 700V 13A 3-Pin TO-247 Tube - Bulk (Alt: IPW65R190C7XKSA1)
RoHS: Compliant
Min Qty: 211
Container: Bulk
Americas - 0
  • 633:$1.4900
  • 1055:$1.4900
  • 2110:$1.4900
  • 422:$1.5900
  • 211:$1.6900
IPW65R190C7XKSA1
DISTI # IPW65R190C7XKSA1
Infineon Technologies AGTrans MOSFET N-CH 700V 13A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R190C7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 1440:$1.5900
  • 2400:$1.5900
  • 960:$1.6900
  • 240:$1.7900
  • 480:$1.7900
IPW65R190C7XKSA1
DISTI # 54X5237
Infineon Technologies AGMOSFET Transistor, N Channel, 24 A, 650 V, 0.404 ohm, 10 V, 3.5 V RoHS Compliant: Yes0
  • 500:$2.4200
  • 250:$2.6600
  • 100:$2.7900
  • 50:$2.9200
  • 25:$3.0500
  • 10:$3.1700
  • 1:$3.6700
IPW65R190C7
DISTI # 726-IPW65R190C7
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
223
  • 1:$3.4400
  • 10:$2.9300
  • 100:$2.5400
  • 250:$2.4100
  • 500:$2.1600
IPW65R190C7XKSA1
DISTI # 726-IPW65R190C7XKSA1
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
287
  • 1:$3.4400
  • 10:$2.9300
  • 100:$2.5400
  • 250:$2.4100
  • 500:$2.1600
IPW65R190C7XKSA1Infineon Technologies AGPower Field-Effect Transistor
RoHS: Compliant
36240
  • 1000:$1.5700
  • 500:$1.6500
  • 100:$1.7200
  • 25:$1.7900
  • 1:$1.9300
IPW65R190C7XKSA1
DISTI # 8977630P
Infineon Technologies AGMOSFET N-CHANNEL 650V 13A COOLMOS TO247, TU468
  • 150:£1.9000
  • 60:£2.0530
  • 30:£2.2000
  • 6:£2.3970
IPW65R190C7XKSA1
DISTI # IPW65R190C7XKSA1
Infineon Technologies AGTransistor: N-MOSFET,unipolar,650V,13A,72W,PG-TO247-336
  • 25:$2.6000
  • 10:$2.9700
  • 3:$3.7300
  • 1:$4.3000
IPW65R190C7XKSA1
DISTI # IPW65R190C7
Infineon Technologies AGN-Ch 650V 13A 72W 0,19R TO247
RoHS: Compliant
235
  • 1:€5.9800
  • 10:€1.9800
  • 50:€1.4800
  • 100:€1.4200
IPW65R190C7XKSA1
DISTI # 2420511
Infineon Technologies AGMOSFET, N-CH, 650V, 24A, TO-247-3
RoHS: Compliant
1
  • 500:$3.2600
  • 250:$3.6300
  • 100:$3.8300
  • 10:$4.4200
  • 1:$5.1800
IPW65R190C7XKSA1
DISTI # 2420511
Infineon Technologies AGMOSFET, N-CH, 650V, 24A, TO-247-3485
  • 500:£1.5700
  • 250:£1.7400
  • 100:£1.8400
  • 10:£2.1300
  • 1:£2.9400
画像 モデル 説明
LM324F-GE2

Mfr.#: LM324F-GE2

OMO.#: OMO-LM324F-GE2

Operational Amplifiers - Op Amps Ind 4Ch 3-32V Ground Sense
IPW65R045C7FKSA1

Mfr.#: IPW65R045C7FKSA1

OMO.#: OMO-IPW65R045C7FKSA1

MOSFET N-Ch 650V 46A TO247-3 CoolMOS C7
BSS138N H6327

Mfr.#: BSS138N H6327

OMO.#: OMO-BSS138N-H6327

MOSFET N-Ch 60V 230mA SOT-23-3
BD3575YFP-ME2

Mfr.#: BD3575YFP-ME2

OMO.#: OMO-BD3575YFP-ME2

LDO Voltage Regulators 4.5-36V TO252-5 15A LDO Regulator
RCS04022K20JNED

Mfr.#: RCS04022K20JNED

OMO.#: OMO-RCS04022K20JNED

Thick Film Resistors - SMD 0.2watt 2.2Kohms 5% 200ppm
C0402C104M4RACAUTO

Mfr.#: C0402C104M4RACAUTO

OMO.#: OMO-C0402C104M4RACAUTO

Multilayer Ceramic Capacitors MLCC - SMD/SMT 16V 0.1uF X7R 0402 20% AEC-Q200
ERJ-PA2D1003X

Mfr.#: ERJ-PA2D1003X

OMO.#: OMO-ERJ-PA2D1003X

Thick Film Resistors - SMD 0402 0.5% 100Kohm
LM324F-GE2

Mfr.#: LM324F-GE2

OMO.#: OMO-LM324F-GE2-ROHM-SEMI

GROUND SENSE OPERATIONAL AMPLIFI
51015-0400

Mfr.#: 51015-0400

OMO.#: OMO-51015-0400-410

Headers & Wire Housings 2.0MM 4CKT BOARD IN M 4CKT BOARD IN HOUS
C0402C104M4RACAUTO

Mfr.#: C0402C104M4RACAUTO

OMO.#: OMO-C0402C104M4RACAUTO-KEMET

Cap Ceramic 0.1uF 16V X7R 20% Pad SMD 0402 125C Automotive
可用性
ストック:
277
注文中:
2260
数量を入力してください:
IPW65R190C7XKSA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$3.44
$3.44
10
$2.93
$29.30
100
$2.54
$254.00
250
$2.41
$602.50
500
$2.16
$1 080.00
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