IRFS3207ZTRRPBF

IRFS3207ZTRRPBF
Mfr. #:
IRFS3207ZTRRPBF
メーカー:
Infineon Technologies
説明:
MOSFET MOSFT 75V 170A 4.1mOhm 120nC Qg
ライフサイクル:
メーカー新製品
データシート:
IRFS3207ZTRRPBF データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFS3207ZTRRPBF DatasheetIRFS3207ZTRRPBF Datasheet (P4-P6)IRFS3207ZTRRPBF Datasheet (P7-P9)IRFS3207ZTRRPBF Datasheet (P10-P12)
ECAD Model:
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
TO-263-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
75 V
Id-連続ドレイン電流:
170 A
Rds On-ドレイン-ソース抵抗:
4.1 mOhms
Vgs th-ゲート-ソースしきい値電圧:
4 V
Qg-ゲートチャージ:
170 nC
最高作動温度:
+ 175 C
Pd-消費電力:
300 W
構成:
独身
包装:
リール
高さ:
4.4 mm
長さ:
10 mm
トランジスタタイプ:
1 N-Channel
幅:
9.25 mm
ブランド:
インフィニオンテクノロジーズ
フォワード相互コンダクタンス-最小:
280 S
立ち下がり時間:
68 ns
製品タイプ:
MOSFET
立ち上がり時間:
68 ns
ファクトリーパックの数量:
800
サブカテゴリ:
MOSFET
パーツ番号エイリアス:
SP001565050
単位重量:
0.139332 oz
Tags
IRFS3207ZT, IRFS3207Z, IRFS3207, IRFS32, IRFS3, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 75 V 4.1 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH Si 75V 170A 3-Pin(2+Tab) D2PAK Tube
***(Formerly Allied Electronics)
MOSFET, N Ch., 75V, 170A, 4.1 MOHM, 120NC QG, D2-PAK, Pb-Free
***nell
MOSFET, N, 75V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 170A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissip
***(Formerly Allied Electronics)
Transistor MOSFET N-ch 75V 120A D2PAK
***ical
Trans MOSFET N-CH Si 75V 170A Automotive 3-Pin(2+Tab) D2PAK T/R
***ernational Rectifier
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon SCT
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
***nell
MOSFET, N-CH, 75V, 170A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
Benefits: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***ical
Trans MOSFET N-CH 75V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
Single N-Channel 75 V 3.1 mOhm 117 nC OptiMOS™ Power Mosfet - D2PAK
***ineon
The 75V OptiMOS technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. | Summary of Features: Optimized technology for synchronous rectification; Best switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RohS compliant - halogen free; MSL1 rated | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
***ark
MOSFET, N-CH, 60V, 210A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
***(Formerly Allied Electronics)
Transistor MOSFET N-ch 60V 120A D2PAK
***ical
Trans MOSFET N-CH Si 60V 210A Automotive 3-Pin(2+Tab) D2PAK T/R
***ernational Rectifier
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
***ineon SCT
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
***ineon
Benefits: Advanced Process Technology; Ultra Low On-Resistance; Enhanced dV/dT and dI/dT capability; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***nell
MOSFET, N-CH, 60V, 210A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***icroelectronics
N-channel 80 V, 0.0028 Ohm typ., 120 A STripFET F7 Power MOSFET in a H2PAK-2 package
***ical
Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) H2PAK T/R
***icroelectronics SCT
Power MOSFETs, 80V, 120A, H2PAK-2, Tape and Reel
***ponent Sense
TRA FET POW 55V 75A 4MOHM D2PAK3
***el Electronic
CAP CERAMIC DISK RDL LONG LEADS
***Yang
MOSFET Automotive-grade N-channel 80 V, 3.3 mOhm typ 90 A STripFET F7 Power MOSFET in H
***ical
Trans MOSFET N-CH 80V 90A Automotive 3-Pin(2+Tab) H2PAK T/R
***r Electronics
Power Field-Effect Transistor, 90A I(D), 80V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***icroelectronics SCT
Automotive Power Discrete, 80V, 90A, H2PAK-2, Tape and Reel
***ical
Trans MOSFET N-CH 80V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
***emi
N-Channel PowerTrench® MOSFET, 80V, 110A, 3.6mΩ
***r Electronics
Power Field-Effect Transistor, 110A I(D), 80V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***icroelectronics
N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
***r Electronics
Power Field-Effect Transistor, 90A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 80 V 64 A 4.3 mOhm Flange Mount STripFET™ F7 Power Mosfet - TO-220FP
***hard Electronics
VISHAY SQM120N06-3M5L-GE3 MOSFET Transistor, N Channel, 120 A, 60 V, 0.0028 ohm, 10 V, 2 V
***roFlash
SQM120N06-3m5LGE3 N-channel MOSFET Transistor, 120 A, 60 V, 2+Tab-Pin TO-263
***ical
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N-CH, 60V, 120A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:375W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited
モデル メーカー 説明 ストック 価格
IRFS3207ZTRRPBF
DISTI # V72:2272_13891541
Infineon Technologies AGTrans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
719
  • 500:$1.5145
  • 250:$1.6635
  • 100:$1.7571
  • 25:$1.9836
  • 10:$2.0063
  • 1:$2.2932
IRFS3207ZTRRPBF
DISTI # IRFS3207ZTRRPBFCT-ND
Infineon Technologies AGMOSFET N-CH 75V 120A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5829In Stock
  • 100:$2.4214
  • 10:$2.9530
  • 1:$3.3100
IRFS3207ZTRRPBF
DISTI # IRFS3207ZTRRPBFDKR-ND
Infineon Technologies AGMOSFET N-CH 75V 120A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5829In Stock
  • 100:$2.4214
  • 10:$2.9530
  • 1:$3.3100
IRFS3207ZTRRPBF
DISTI # IRFS3207ZTRRPBFTR-ND
Infineon Technologies AGMOSFET N-CH 75V 120A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
5600In Stock
  • 800:$1.7201
IRFS3207ZTRRPBF
DISTI # 28997281
Infineon Technologies AGTrans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
800
  • 800:$1.7264
IRFS3207ZTRRPBF
DISTI # 31274461
Infineon Technologies AGTrans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
719
  • 500:$1.5145
  • 250:$1.6635
  • 100:$1.7571
  • 25:$1.9836
  • 10:$2.0063
  • 6:$2.2932
IRFS3207ZTRRPBF
DISTI # 49AC0315
Infineon Technologies AGMOSFET, N-CH, 75V, 120A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:75V,On Resistance Rds(on):0.0033ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes139
  • 1:$2.7600
  • 10:$2.3500
  • 25:$2.2500
  • 50:$2.1400
  • 100:$2.0400
  • 250:$1.9300
  • 500:$1.7400
IRFS3207ZTRRPBF
DISTI # 942-IRFS3207ZTRRPBF
Infineon Technologies AGMOSFET MOSFT 75V 170A 4.1mOhm 120nC Qg
RoHS: Compliant
1023
  • 1:$2.7600
  • 10:$2.3500
  • 100:$2.0400
  • 250:$1.9300
  • 500:$1.7400
IRFS3207ZTRRPBFInternational Rectifier 676
    IRFS3207ZTRRPBF
    DISTI # 2839493
    Infineon Technologies AGMOSFET, N-CH, 75V, 120A, TO-263
    RoHS: Compliant
    256
    • 1:£2.3600
    • 10:£1.7800
    • 100:£1.5400
    • 250:£1.4600
    • 500:£1.1000
    IRFS3207ZTRRPBF
    DISTI # 2839493
    Infineon Technologies AGMOSFET, N-CH, 75V, 120A, TO-263
    RoHS: Compliant
    139
    • 1:$3.3800
    • 10:$3.1600
    • 100:$2.7900
    • 250:$2.6400
    • 500:$2.5000
    • 1000:$2.3800
    IRFS3207ZTRRPBF
    DISTI # C1S322000494891
    Infineon Technologies AGTrans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    800
    • 800:$1.4700
    IRFS3207ZTRRPBF
    DISTI # C1S322000689374
    Infineon Technologies AGMOSFETs
    RoHS: Compliant
    719
    • 250:$1.6635
    • 100:$1.7571
    • 25:$1.9836
    • 10:$2.0063
    • 1:$2.2932
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    可用性
    ストック:
    831
    注文中:
    2814
    数量を入力してください:
    IRFS3207ZTRRPBFの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $2.76
    $2.76
    10
    $2.34
    $23.40
    100
    $2.03
    $203.00
    250
    $1.92
    $480.00
    500
    $1.73
    $865.00
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