IPB60R190C6

IPB60R190C6
Mfr. #:
IPB60R190C6
メーカー:
Infineon Technologies
説明:
Trans MOSFET N-CH 650V 20.2A 4-Pin TO-263 T/R (Alt: IPB60R190C6)
ライフサイクル:
メーカー新製品
データシート:
IPB60R190C6 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
IPB60R190C6 詳しくは
製品属性
属性値
メーカー
インフィニオン
製品カテゴリ
FET-シングル
シリーズ
CoolMOS C6
包装
リール
パーツエイリアス
IPB60R190C6ATMA1 IPB60R190C6XT SP000641916
単位重量
0.139332 oz
取り付けスタイル
SMD / SMT
商標名
CoolMOS
パッケージ-ケース
TO-252-3
テクノロジー
Si
チャネル数
1 Channel
構成
独身
トランジスタタイプ
1 N-Channel
Pd-電力損失
151 W
最高作動温度
+ 150 C
最低作動温度
- 55 C
Vgs-Gate-Source-Voltage
20 V
Id-連続-ドレイン-電流
20.2 A
Vds-ドレイン-ソース-ブレークダウン-電圧
600 V
Rds-On-Drain-Source-Resistance
190 mOhms
トランジスタ-極性
Nチャネル
Tags
IPB60R190C, IPB60R190, IPB60R19, IPB60R1, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
モデル メーカー 説明 ストック 価格
IPB60R190C6ATMA1
DISTI # IPB60R190C6ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 600V 20.2A TO263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 1000:$1.6261
IPB60R190C6ATMA1
DISTI # IPB60R190C6ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 600V 20.2A TO263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
  • 500:$1.9859
  • 100:$2.4525
  • 10:$2.9910
  • 1:$3.3500
IPB60R190C6ATMA1
DISTI # IPB60R190C6ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 600V 20.2A TO263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Limited Supply - Call
  • 500:$1.9859
  • 100:$2.4525
  • 10:$2.9910
  • 1:$3.3500
IPB60R190C6
DISTI # IPB60R190C6
Infineon Technologies AGTrans MOSFET N-CH 650V 20.2A 4-Pin TO-263 T/R (Alt: IPB60R190C6)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Asia - 0
    IPB60R190C6
    DISTI # SP000641916
    Infineon Technologies AGTrans MOSFET N-CH 650V 20.2A 4-Pin TO-263 T/R (Alt: SP000641916)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Europe - 0
    • 1000:€1.6900
    • 2000:€1.3900
    • 4000:€1.2900
    • 6000:€1.1900
    • 10000:€1.0900
    IPB60R190C6
    DISTI # SP000641916
    Infineon Technologies AGTrans MOSFET N-CH 650V 20.2A 4-Pin TO-263 T/R (Alt: SP000641916)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Europe - 0
    • 1000:€1.1900
    • 2000:€1.1900
    • 4000:€1.1900
    • 6000:€1.1900
    • 10000:€1.1900
    IPB60R190C6XT
    DISTI # IPB60R190C6ATMA1
    Infineon Technologies AGTrans MOSFET N-CH 600V 20.2A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R190C6ATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 1000:$1.4900
    • 2000:$1.3900
    • 4000:$1.3900
    • 6000:$1.2900
    • 10000:$1.2900
    IPB60R190C6ATMA1
    DISTI # 30T1830
    Infineon Technologies AGMOSFET,N CH,600V,20.2A,TO263,Transistor Polarity:N Channel,Continuous Drain Current Id:20.2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.17ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes0
    • 1:$2.8600
    • 10:$2.4300
    • 100:$1.9500
    • 500:$1.8000
    • 1000:$1.6200
    • 2500:$1.3100
    • 5000:$1.2700
    IPB60R190C6
    DISTI # 726-IPB60R190C6
    Infineon Technologies AGMOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6
    RoHS: Compliant
    0
    • 1:$2.8000
    • 10:$2.3800
    • 100:$2.0600
    • 250:$1.9600
    • 500:$1.7600
    • 1000:$1.4800
    IPB60R190C6ATMA1
    DISTI # 726-IPB60R190C6ATMA1
    Infineon Technologies AGMOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6
    RoHS: Compliant
    0
    • 1:$2.8000
    • 10:$2.3800
    • 100:$2.0600
    • 250:$1.9600
    • 500:$1.7600
    • 1000:$1.4800
    IPB60R190C6Infineon Technologies AGPower Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant
    3
    • 1000:$1.2800
    • 500:$1.3400
    • 100:$1.4000
    • 25:$1.4600
    • 1:$1.5700
    IPB60R190C6ATMA1
    DISTI # 7533005P
    Infineon Technologies AGMOSFET N-CH 650V 20.2A COOLMOS C6 TO263, RL200
    • 10:£1.8200
    • 50:£1.6400
    • 250:£1.4600
    • 500:£1.2800
    IPB60R190C6ATMA1
    DISTI # IPB60R190C6ATMA1
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,600V,20.2A,151W,PG-TO263-3133
    • 1:$2.9700
    • 3:$2.5500
    • 10:$2.0500
    • 100:$1.7800
    IPB60R190C6Infineon Technologies AG600V,20.2A,N channel Power MOSFET7
    • 1:$2.3200
    • 100:$1.9400
    • 500:$1.7100
    • 1000:$1.6600
    IPB60R190C6ATMA1
    DISTI # 1860814
    Infineon Technologies AGMOSFET,N CH,600V,20.2A,TO263
    RoHS: Compliant
    0
    • 1:£2.5700
    • 10:£1.7500
    • 100:£1.6500
    • 250:£1.5600
    • 500:£1.3700
    画像 モデル 説明
    IPB60R199CP

    Mfr.#: IPB60R199CP

    OMO.#: OMO-IPB60R199CP

    MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP
    IPB60R125CFD7ATMA1

    Mfr.#: IPB60R125CFD7ATMA1

    OMO.#: OMO-IPB60R125CFD7ATMA1

    MOSFET
    IPB60R280C6ATMA1

    Mfr.#: IPB60R280C6ATMA1

    OMO.#: OMO-IPB60R280C6ATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 600V 13.8A TO263
    IPB60R380P6ATMA1

    Mfr.#: IPB60R380P6ATMA1

    OMO.#: OMO-IPB60R380P6ATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 600V TO263-3
    IPB60R190C6  6R190C6

    Mfr.#: IPB60R190C6 6R190C6

    OMO.#: OMO-IPB60R190C6-6R190C6-1190

    ブランドニューオリジナル
    IPB600N25N3 G

    Mfr.#: IPB600N25N3 G

    OMO.#: OMO-IPB600N25N3-G-1190

    Trans MOSFET N-CH 250V 25A 3-Pin TO-263 T/R (Alt: IPB600N25N3 G)
    IPB60R119CP

    Mfr.#: IPB60R119CP

    OMO.#: OMO-IPB60R119CP-1190

    ブランドニューオリジナル
    IPB60R165CP  6R165P

    Mfr.#: IPB60R165CP 6R165P

    OMO.#: OMO-IPB60R165CP-6R165P-1190

    ブランドニューオリジナル
    IPB60R520CPATMA1

    Mfr.#: IPB60R520CPATMA1

    OMO.#: OMO-IPB60R520CPATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 600V 6.8A TO-263
    IPB60R250CP

    Mfr.#: IPB60R250CP

    OMO.#: OMO-IPB60R250CP-124

    Darlington Transistors MOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP
    可用性
    ストック:
    Available
    注文中:
    4500
    数量を入力してください:
    IPB60R190C6の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $2.14
    $2.14
    10
    $2.04
    $20.38
    100
    $1.93
    $193.05
    500
    $1.82
    $911.65
    1000
    $1.72
    $1 716.00
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