IPB80N03S4L-02

Mfr. #:: IPB80N03S4L-02
メーカー:: Infineon Technologies
説明:: Darlington Transistors MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2
ライフサイクル:: メーカー新製品
データシート:: IPB80N03S4L-02 データシート
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詳しくは:: IPB80N03S4L-02 詳しくは

製品属性
属性値

メーカー: インフィニオン

製品カテゴリ: FET-シングル

シリーズ: OptiMOS-T2

包装: リール

パーツエイリアス: IPB80N03S4L02ATMA1 IPB80N03S4L02XT SP000273282

単位重量: 0.139332 oz

取り付けスタイル: SMD / SMT

商標名: OptiMOS

パッケージ-ケース: TO-252-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 136 W

最高作動温度: + 175 C

最低作動温度: - 55 C

立ち下がり時間: 13 ns

立ち上がり時間: 9 ns

Vgs-Gate-Source-Voltage: 16 V

Id-連続-ドレイン-電流: 80 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Rds-On-Drain-Source-Resistance: 2.4 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 62 ns

典型的なターンオン遅延時間: 14 ns

チャネルモード: 強化

Tags: IPB80N03S4L-0, IPB80N03S, IPB80N03, IPB80N0, IPB80N, IPB8, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB80N03S4L-02 詳しくは

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

20V to 40V N-Channel Automotive MOSFETs: Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8), TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

モデル	メーカー	説明	ストック	価格
IPB80N03S4L02ATMA1 DISTI # IPB80N03S4L02ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 80A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$0.8879
IPB80N03S4L02ATMA1 DISTI # IPB80N03S4L02ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB80N03S4L02ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$0.8019 2000:$0.7729 4000:$0.7449 6000:$0.7199 10000:$0.7069
IPB80N03S4L02ATMA1 DISTI # SP000273282	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 (Alt: SP000273282) RoHS: Compliant Min Qty: 1000	Europe - 0	1000:€1.1889 2000:€0.9269 4000:€0.8289 6000:€0.7539 10000:€0.7069
IPB80N03S4L02ATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 80A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	16735	1000:$0.5500 500:$0.5800 100:$0.6100 25:$0.6300 1:$0.6800
IPB80N03S4L-02 DISTI # 726-IPB80N03S4L-02	Infineon Technologies AG	MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2 RoHS: Compliant	1105	1:$1.5100 10:$1.2800 100:$1.0300 500:$0.8940 1000:$0.7410
IPB80N03S4L02ATMA1 DISTI # 8268954P	Infineon Technologies AG	MOSFET N-CH 80A 30V OPTIMOS-T2 TO263, RL	1175	125:£0.7720 500:£0.6700 1250:£0.6370

画像	モデル	説明
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IPB80N03S4L-02

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes