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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| BUZ73A H DISTI # BUZ73AH-ND | Infineon Technologies AG | MOSFET N-CH 200V 5.5A TO220-3 RoHS: Compliant Min Qty: 2000 Container: Tube | Limited Supply - Call | |
| BUZ73A H3046 DISTI # BUZ73AH3046-ND | Infineon Technologies AG | MOSFET N-CH 200V 5.5A TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube | Limited Supply - Call | |
| BUZ 73A H DISTI # BUZ73AH | Infineon Technologies AG | Trans MOSFET N-CH 200V 5.5A 3-Pin(3+Tab) TO-220 - Bulk (Alt: BUZ73AH) RoHS: Compliant Min Qty: 834 Container: Bulk | Americas - 0 | |
| BUZ73AHXKSA1 DISTI # BUZ73AHXKSA1 | Infineon Technologies AG | - Bulk (Alt: BUZ73AHXKSA1) RoHS: Compliant Min Qty: 863 Container: Bulk | Americas - 0 |
|
| BUZ73A H DISTI # 726-BUZ73AH | Infineon Technologies AG | MOSFET N-Ch 200V 5.5A TO220-3 RoHS: Compliant | 0 | |
| BUZ73A H3046 DISTI # 726-BUZ73AH3046 | Infineon Technologies AG | MOSFET N-Ch 200V 5.5A TO220-3 RoHS: Compliant | 0 | |
| BUZ73AH3046 | Infineon Technologies AG | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 12135 |
|
| BUZ73AHXKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 16100 |
|
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: BUZ73A OMO.#: OMO-BUZ73A |
MOSFET N-Ch 200V 5.5A TO220-3 |
|
Mfr.#: BUZ11 OMO.#: OMO-BUZ11-1190 |
TO220 NCH MOS 50V .04R |
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Mfr.#: BUZ216 OMO.#: OMO-BUZ216-1190 |
ブランドニューオリジナル |
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Mfr.#: BUZ230 OMO.#: OMO-BUZ230-1190 |
ブランドニューオリジナル |
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Mfr.#: BUZ31 E3046 |
MOSFET N-CH 200V 14.5A TO262-3 |
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Mfr.#: BUZ342 OMO.#: OMO-BUZ342-1190 |
Power Field-Effect Transistor, 60A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA |
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Mfr.#: BUZ45 OMO.#: OMO-BUZ45-1190 |
ブランドニューオリジナル |
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Mfr.#: BUZ50B OMO.#: OMO-BUZ50B-1190 |
ブランドニューオリジナル |
|
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Mfr.#: BUZ77 OMO.#: OMO-BUZ77-1190 |
ブランドニューオリジナル |
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Mfr.#: BUZ30AH3045A OMO.#: OMO-BUZ30AH3045A-1190 |
Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |