FDN358P

Mfr. #:: FDN358P
メーカー:: ON Semiconductor
説明:
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製品属性
属性値

メーカー: フェアチャイルド

製品カテゴリ: FET-シングル

シリーズ: PowerTrenchR

包装: Digi-ReelR代替パッケージ

パーツエイリアス: FDN358P_NL

単位重量: 0.001058 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: TO-236-3, SC-59, SOT-23-3

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: SuperSOT-3

構成: 独身

FETタイプ: MOSFET Pチャネル、金属酸化物

パワーマックス: 460mW

トランジスタタイプ: 1 P-Channel

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: 182pF @ 15V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 1.5A (Ta)

Rds-On-Max-Id-Vgs: 125 mOhm @ 1.5A, 10V

Vgs-th-Max-Id: 3V @ 250μA

ゲートチャージ-Qg-Vgs: 5.6nC @ 10V

Pd-電力損失: 500 mW

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 13 ns

立ち上がり時間: 13 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 1.5 A

Vds-ドレイン-ソース-ブレークダウン-電圧: - 30 V

Rds-On-Drain-Source-Resistance: 125 mOhms

トランジスタ-極性: Pチャネル

典型的なターンオフ遅延時間: 12 ns

典型的なターンオン遅延時間: 5 ns

フォワード-相互コンダクタンス-最小: 3.5 S

チャネルモード: 強化

Tags: FDN358P, FDN358, FDN35, FDN3, FDN

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDN358P 説明

***Components: In a Pack of 5, P-Channel MOSFET, 1.5 A, 30 V, 3-Pin SOT-23 ON Semiconductor FDN358P

***Semiconductor: P-Channel PowerTrench® MOSFET, Logic Level, -30V, -1.5A, 125mΩ

***ure Electronics: Single P-Channel 30V 125 mOhm Logic Level PowerTrench Mosfet SSOT-3

***p One Stop Global: Trans MOSFET P-CH 30V 1.5A 3-Pin SOT-23 T/R

***p One Stop Japan: Trans MOSFET P-CH 30V 1.5A 3-Pin SuperSOT T/R

***trelec: MOSFET Operating temperature: -55...150 °C Marking: 358 Drive: logic level Housing type: SOT-23 Polarity: P Power dissipation: 500 mW

***ark: MOSFET, P, SOT-23, FULL REEL

***akorn: MOSFET P-Channel 30V 1.5A SuperSOT3

***ical: Trans MOSFET P-CH 30V 1.5A T/R

*** Source Electronics: MOSFET P-CH 30V 1.5A SSOT3

***eco: Fairchild Semi Fdn358P

***rchild Semiconductor: This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior sw itching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.

***ment14 APAC: Prices include import duty and tax. MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.9V; Power Dissipation Pd:560mW; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:1.5A; Current Temperature:25°C; Device Marking:FDN358P; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:5A; SMD Marking:358; Tape Width:8mm; Voltage Vds Typ:-30V; Voltage Vgs Max:-1.9V; Voltage Vgs Rds on Measurement:-10V

***nell: MOSFET, P, SOT-23; Polarità Transistor:Canale P; Corrente Continua di Drain Id:1.6A; Tensione Drain Source Vds:-30V; Resistenza di Attivazione Rds(on):0.2ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-1.9V; Dissipazione di Potenza Pd:560mW; Modello Case Transistor:SOT-23; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:1.5A; Corrente di Impulso Idm:5A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Larghezza Esterna:3.05mm; Larghezza Nastro:8mm; Livello Temperatura a Piena Potenza:25°C; Lunghezza/Altezza Esterna:1.12mm; Marcatura Dispositivo:FDN358P; Marcatura SMD:358; No. di Transistor:1; Profondità Esterna:2.5mm; Temperatura di Corrente:25°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:-30V; Tensione Vgs Max:-1.9V

Market price

モデル	メーカー	説明	ストック	価格
FDN358P DISTI # C1S541901591647	ON Semiconductor	Trans MOSFET P-CH 30V 1.5A 3-Pin SOT-23 T/R RoHS: Compliant	3013	3000:$0.1210
FDN358P DISTI # FDN358PCT-ND	ON Semiconductor	MOSFET P-CH 30V 1.5A SSOT3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	23795In Stock	1000:$0.1513 500:$0.2018 100:$0.2943 10:$0.4290 1:$0.5500
FDN358P DISTI # FDN358PDKR-ND	ON Semiconductor	MOSFET P-CH 30V 1.5A SSOT3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	23795In Stock	1000:$0.1513 500:$0.2018 100:$0.2943 10:$0.4290 1:$0.5500
FDN358P DISTI # FDN358PTR-ND	ON Semiconductor	MOSFET P-CH 30V 1.5A SSOT3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	21000In Stock	3000:$0.1347
FDN358P DISTI # FDN358P	ON Semiconductor	Trans MOSFET P-CH 30V 1.5A 3-Pin SuperSOT T/R (Alt: FDN358P) RoHS: Compliant Min Qty: 9000 Container: Tape and Reel	Asia - 0
FDN358P DISTI # FDN358P	ON Semiconductor	Trans MOSFET P-CH 30V 1.5A 3-Pin SuperSOT T/R - Cut TR (SOS) (Alt: FDN358P) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 0
FDN358P DISTI # FDN358P	ON Semiconductor	Trans MOSFET P-CH 30V 1.5A 3-Pin SuperSOT T/R - Tape and Reel (Alt: FDN358P) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	6000:$0.0879 12000:$0.0869 18000:$0.0859 30000:$0.0849 60000:$0.0829
FDN358P_G DISTI # FDN358P-G	ON Semiconductor	Trans MOSFET P-CH 30V 1.5A 3-Pin SOT-23 T/R (Alt: FDN358P-G) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
FDN358P DISTI # 87X5243	ON Semiconductor	MOSFET Transistor, P Channel, 1.6 A, 30 V, 200 mohm, -10 V, -1.9 V , RoHS Compliant: Yes	6000	1:$0.1160 3000:$0.1130 6000:$0.1110 12000:$0.1080 18000:$0.1040 30000:$0.0990
FDN358P DISTI # 58K8843	ON Semiconductor	P CHANNEL MOSFET, -30V, 1.5A SUPER SOT-3,Transistor Polarity:P Channel,Continuous Drain Current Id:1.6A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):200mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.9V , RoHS Compliant: Yes	0	1:$0.4400 25:$0.3290 50:$0.2540 100:$0.1790 250:$0.1640 500:$0.1490 1000:$0.1340
FDN358P	ON Semiconductor	Single P-Channel 30V 125 mOhm Logic Level PowerTrench Mosfet SSOT-3 RoHS: Compliant	48000Reel	3000:$0.0995 6000:$0.0939 9000:$0.0926
FDN358P	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	70156	1000:$0.1600 500:$0.1700 100:$0.1800 25:$0.1900 1:$0.2000
FDN358P DISTI # 512-FDN358P	ON Semiconductor	MOSFET SSOT-3 P-CH -30V RoHS: Compliant	2993	1:$0.4400 10:$0.3290 100:$0.1790 1000:$0.1340 3000:$0.1160 9000:$0.1080 24000:$0.0990 45000:$0.0950
FDN358P	Fairchild Semiconductor Corporation		2123
FDN358P DISTI # 6710450P	ON Semiconductor	MOSFET P-CHANNEL 30V 1.5A SUPERSOT3, RL	6960	25:£0.2140 100:£0.1160 250:£0.1120 500:£0.1080
FDN358P DISTI # 6710450	ON Semiconductor	MOSFET P-CHANNEL 30V 1.5A SUPERSOT3, PK	805	5:£0.4140 25:£0.2140 100:£0.1160 250:£0.1120 500:£0.1080
FDN358P	Fairchild Semiconductor Corporation	1500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	5	1:$0.3000
FDN358P	Fairchild Semiconductor Corporation	1500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	16	7:$0.6212 1:$0.7765
FDN358P	Fairchild Semiconductor Corporation	RoHS: Compliant	Europe - 1885
FDN358P	Fairchild Semiconductor Corporation	INSTOCK	1843
FDN358P DISTI # FDN358P	Fairchild Semiconductor Corporation	RoHS: Compliant	76
FDN358P DISTI # XSFP00000073985	Fairchild Semiconductor Corporation	RoHS: Compliant	258432	3000:$0.1333 258432:$0.1250
FDN358P DISTI # 9846328	ON Semiconductor	MOSFET, P, SOT-23 RoHS: Compliant	8455	5:£0.2830 50:£0.2550 100:£0.1370 500:£0.1010 1500:£0.0945
FDN358P DISTI # 2438447	ON Semiconductor	MOSFET, P, SOT-23, FULL REEL RoHS: Compliant	6000	3000:$0.2140
FDN358P DISTI # 9846328RL	ON Semiconductor	MOSFET, P, SOT-23 RoHS: Compliant	0	1:$0.6970 10:$0.5210 100:$0.2840 1000:$0.2130 3000:$0.1840 9000:$0.1720 24000:$0.1570 45000:$0.1510
FDN358P DISTI # 9846328	ON Semiconductor	MOSFET, P, SOT-23 RoHS: Compliant	0	1:$0.6970 10:$0.5210 100:$0.2840 1000:$0.2130 3000:$0.1840 9000:$0.1720 24000:$0.1570 45000:$0.1510

画像	モデル	説明
	Mfr.#: FDN359BN_F095 OMO.#: OMO-FDN359BN-F095-1190	Trans MOSFET N-CH 30V 2.7A 3-Pin SOT-23 T/R (Alt: FDN359BN-F095)
	Mfr.#: FDN103A- OMO.#: OMO-FDN103A--1190	ブランドニューオリジナル
	Mfr.#: FDN301N-NL OMO.#: OMO-FDN301N-NL-1190	ブランドニューオリジナル
	Mfr.#: FDN304PZ-NL. OMO.#: OMO-FDN304PZ-NL--1190	ブランドニューオリジナル
	Mfr.#: FDN335A OMO.#: OMO-FDN335A-1190	ブランドニューオリジナル
	Mfr.#: FDN356P-NL OMO.#: OMO-FDN356P-NL-1190	ブランドニューオリジナル
	Mfr.#: FDN3598N OMO.#: OMO-FDN3598N-1190	ブランドニューオリジナル
	Mfr.#: FDN452P-NL OMO.#: OMO-FDN452P-NL-1190	ブランドニューオリジナル
	Mfr.#: FDN5632N-NL OMO.#: OMO-FDN5632N-NL-1190	ブランドニューオリジナル
	Mfr.#: FDN359AN-CUT TAPE OMO.#: OMO-FDN359AN-CUT-TAPE-1190	ブランドニューオリジナル

FDN358P

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes