APT7M120S

APT7M120S
Mfr. #:
APT7M120S
メーカー:
Microchip / Microsemi
説明:
MOSFET FG, MOSFET, 1200V, TO-268
ライフサイクル:
メーカー新製品
データシート:
APT7M120S データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT7M120S DatasheetAPT7M120S Datasheet (P4)
ECAD Model:
製品属性
属性値
メーカー:
マイクロチップ
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
D3PAK-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
1.2 kV
Id-連続ドレイン電流:
8 A
Rds On-ドレイン-ソース抵抗:
1.5 Ohms
Vgs th-ゲート-ソースしきい値電圧:
3 V
Vgs-ゲート-ソース間電圧:
30 V
Qg-ゲートチャージ:
80 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
335 W
構成:
独身
チャネルモード:
強化
包装:
チューブ
トランジスタタイプ:
1 N-Channel
ブランド:
マイクロチップ/マイクロセミ
フォワード相互コンダクタンス-最小:
8 S
立ち下がり時間:
13 ns
製品タイプ:
MOSFET
立ち上がり時間:
8 ns
ファクトリーパックの数量:
1
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
45 ns
典型的なターンオン遅延時間:
14 ns
単位重量:
1.340411 oz
Tags
APT7, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***N
    A***N
    RU

    Good bridges work! Fast shipping!

    2019-01-11
    M***v
    M***v
    RU

    Came in safe and sound, thanks to the seller

    2019-05-08
    V***i
    V***i
    UA

    Delivery-22 days. i recommend the seller.

    2019-02-15
    I***v
    I***v
    RU

    Leds quality work well, product quality will show time.

    2019-05-31
***ical
Trans MOSFET N-CH Si 1.2KV 8A 3-Pin(2+Tab) D3PAK Tube
***et
Power MOS 8 MOSFET N-Channel 1200V 8A 3-Pin TO-268
*** Stop Electro
Power Field-Effect Transistor, 7A I(D), 1200V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***emi
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*** Stop Electro
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***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
***et
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***ser
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***el Nordic
Contact for details
***ark
MOSFET, P-CH, 60V, 8.8A, TO-263; Transistor Polarity:P Channel; Continuous Drain
***nell
MOSFET, P-CH, 60V, 8.8A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.8A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.221ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:42W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
***icroelectronics
N-channel 950 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFET in a H2PAK-2 package
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***enic
950V 6A 110W 1.25´Î@10V3A 5V@100Ã×A N Channel H2PAK-2 MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 6A I(D), 950V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N-CH, 950V, 6A, 150DEG C, 110W; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 950V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: H2PAK-2; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh K5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***icroelectronics
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*** Electronic Components
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***r Electronics
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モデル メーカー 説明 ストック 価格
APT7M120S
DISTI # APT7M120S-ND
Microsemi CorporationMOSFET N-CH 1200V 8A D3PAK
RoHS: Compliant
Min Qty: 79
Container: Bulk
Temporarily Out of Stock
  • 79:$6.6911
APT7M120S
DISTI # APT7M120S
Microchip Technology IncPower MOS 8 MOSFET N-Channel 1200V 8A 3-Pin TO-268 - Rail/Tube (Alt: APT7M120S)
RoHS: Compliant
Min Qty: 79
Container: Tube
Americas - 0
  • 790:$3.9900
  • 395:$4.0900
  • 237:$4.1900
  • 158:$4.2900
  • 79:$4.4900
APT7M120S
DISTI # 494-APT7M120S
Microchip Technology IncMOSFET Power MOSFET - MOS8
RoHS: Compliant
75
  • 1:$9.2500
  • 5:$8.8900
  • 10:$8.5600
  • 25:$7.8600
  • 50:$7.5800
  • 100:$7.3100
  • 250:$6.7100
  • 500:$6.4700
  • 1000:$6.2400
画像 モデル 説明
HVM12

Mfr.#: HVM12

OMO.#: OMO-HVM12

Rectifiers HVM 350mA 12000v
HVM12

Mfr.#: HVM12

OMO.#: OMO-HVM12-111

Rectifiers HVM 350mA 12000v
NLV32T-330J-EF

Mfr.#: NLV32T-330J-EF

OMO.#: OMO-NLV32T-330J-EF-TDK

Fixed Inductors 33uH 5.6ohms 70mA Wound Ferrite
可用性
ストック:
75
注文中:
2058
数量を入力してください:
APT7M120Sの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$9.25
$9.25
5
$8.89
$44.45
10
$8.56
$85.60
25
$7.86
$196.50
50
$7.58
$379.00
100
$7.31
$731.00
250
$6.71
$1 677.50
500
$6.47
$3 235.00
1000
$6.24
$6 240.00
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