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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| BSP296L6433HTMA1 DISTI # BSP296L6433HTMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 1.1A SOT-223 RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP296L6433HTMA1 DISTI # BSP296L6433HTMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 1.1A SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP296L6433HTMA1 DISTI # BSP296L6433HTMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 1.1A SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSP296 L6433 DISTI # BSP296L6433 | Infineon Technologies AG | Trans MOSFET N-CH 100V 1.1A 4-Pin(3+Tab) SOT-223 T/R - Bulk (Alt: BSP296L6433) RoHS: Not Compliant Min Qty: 1316 Container: Bulk | Americas - 0 |
|
| BSP296L6433HTMA1 DISTI # BSP296L6433HTMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 1.1A 4-Pin SOT-223 T/R - Bulk (Alt: BSP296L6433HTMA1) Min Qty: 1191 Container: Bulk | Americas - 0 |
|
| BSP296 L6433 DISTI # 726-BSP296L6433 | Infineon Technologies AG | MOSFET N-Ch 100V 1.1A SOT-223-3 RoHS: Compliant | 0 | |
| BSP296L6433 | Infineon Technologies AG | Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 7941 |
|
| BSP296L6433HTMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 4000 |
|
| BSP296 L6433 | Infineon Technologies AG | 2443 |
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: BSP296N H6433 OMO.#: OMO-BSP296N-H6433-1190 |
MOSFET SMALL SIGNAL N-CH |
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Mfr.#: BSP299L3627 OMO.#: OMO-BSP299L3627-1190 |
ブランドニューオリジナル |
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Mfr.#: BSP295L6327 OMO.#: OMO-BSP295L6327-1190 |
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BSP296L6327XT OMO.#: OMO-BSP296L6327XT-1190 |
ブランドニューオリジナル |
|
Mfr.#: BSP298L6327HUSA1 |
MOSFET N-CH 400V 500MA SOT-223 |
|
|
Mfr.#: BSP299L6327 OMO.#: OMO-BSP299L6327-1190 |
Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSP299L6327HUSA1 |
MOSFET N-CH 500V 400MA SOT-223 |
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Mfr.#: BSP299 E6327 |
MOSFET N-CH 500V 400MA SOT-223 |
|
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Mfr.#: BSP296NL6327HTSA1 |
MOSFET N-CH 100V 1.2A SOT223-4 |
|
|
Mfr.#: BSP299H6327XUSA1 |
IGBT Transistors MOSFET N-Ch 500V 400mA SOT-223-3 |
