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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| ISL9N312AD3ST DISTI # 512-ISL9N312AD3ST | ON Semiconductor | MOSFET N-Ch LL UltraFET PWM Optimized RoHS: Compliant | 0 | |
| ISL9N312AD3 DISTI # 512-ISL9N312AD3 | ON Semiconductor | MOSFET N-Ch LL UltraFET PWM Optimized RoHS: Compliant | 0 | |
| ISL9N312AD3 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 50A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Compliant | 211233 |
|
| ISL9N312AD3ST | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 50A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 140093 |
|
| ISL9N312AD3STNL | Fairchild Semiconductor Corporation | RoHS: Not Compliant | 150 |
|
| ISL9N312AD3ST_NL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 50A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 184 |
|
| ISL9N312AD3_NL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 50A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Compliant | 340 |
|
| ISLN312AD3ST | Fairchild Semiconductor Corporation | RoHS: Not Compliant | 10000 |
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: N318-15M OMO.#: OMO-N318-15M |
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Mfr.#: N318AD OMO.#: OMO-N318AD-1190 |
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