CSD17304Q3

Mfr. #:: CSD17304Q3
説明:: MOSFET N-CH 30V 56A 8SON
ライフサイクル:: メーカー新製品
データシート:: CSD17304Q3 データシート
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詳しくは:: CSD17304Q3 詳しくは CSD17304Q3 Product Details

製品属性
属性値

メーカー: テキサスインスツルメンツ

製品カテゴリ: FET-シングル

シリーズ: NexFET

包装: Digi-ReelR代替パッケージ

取り付けスタイル: SMD / SMT

商標名: NexFET

パッケージ-ケース: 8-PowerTDFN

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: 8-VSON (5x6)

構成: 独身

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 2.7W

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: 955pF @ 15V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 15A (Ta), 56A (Tc)

Rds-On-Max-Id-Vgs: 7.5 mOhm @ 17A, 8V

Vgs-th-Max-Id: 1.8V @ 250μA

ゲートチャージ-Qg-Vgs: 6.6nC @ 4.5V

Pd-電力損失: 2.7 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 3.1 ns

立ち上がり時間: 9.1 ns

Vgs-Gate-Source-Voltage: 10 V

Id-連続-ドレイン-電流: 15 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.3 V

Rds-On-Drain-Source-Resistance: 8.8 mOhms

トランジスタ-極性: Nチャネル

Qg-Gate-Charge: 5.1 nC

Tags: CSD1730, CSD173, CSD17, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD17304Q3 詳しくは

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

モデル	説明	ストック	価格
CSD17304Q3 DISTI # 296-27509-1-ND	MOSFET N-CH 30V 56A 8SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8922In Stock	1000:$0.4300 500:$0.5446 100:$0.7023 10:$0.8890 1:$1.0000
CSD17304Q3 DISTI # 296-27509-6-ND	MOSFET N-CH 30V 56A 8SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8922In Stock	1000:$0.4300 500:$0.5446 100:$0.7023 10:$0.8890 1:$1.0000
CSD17304Q3 DISTI # 296-27509-2-ND	MOSFET N-CH 30V 56A 8SON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	12500:$0.3562 5000:$0.3701 2500:$0.3896
CSD17304Q3 DISTI # CSD17304Q3	Trans MOSFET N-CH 30V 15A 8-Pin SON T/R - Tape and Reel (Alt: CSD17304Q3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3669 5000:$0.3489 10000:$0.3369 15000:$0.3259 25000:$0.3169
CSD17304Q3 DISTI # CSD17304Q3	Trans MOSFET N-CH 30V 15A 8-Pin SON T/R (Alt: CSD17304Q3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.5029 5000:€0.4119 10000:€0.3769 15000:€0.3229 25000:€0.3019
CSD17304Q3 DISTI # 71Y7090	MOSFET Transistor, N Channel, 56 A, 30 V, 0.0059 ohm, 8 V, 1.3 V , RoHS Compliant: Yes	0
CSD17304Q3	30V N-Channel NexFET&#153,Power MOSFET	7263	1000:$0.2900 750:$0.3200 500:$0.4000 250:$0.4900 100:$0.5300 25:$0.6300 10:$0.6800 1:$0.7600
CSD17304Q3 DISTI # 595-CSD17304Q3	MOSFET 30V N Channel NexFET Power MOSFET RoHS: Compliant	1761	1:$0.8300 10:$0.7090 100:$0.5440 500:$0.4810 1000:$0.3800 2500:$0.3370
CSD17304Q3	Power Field-Effect Transistor, 15A I(D), 30V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	125	1000:$0.3800 500:$0.4000 100:$0.4200 25:$0.4400 1:$0.4700
CSD17304Q3	POWER FIELD-EFFECT TRANSISTOR, 15A I(D), 30V, 0.0126OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET	3057	2561:$0.2750 572:$0.3125 1:$1.0000
CSD17304Q3 DISTI # 2501089	MOSFET, N-CH, 30V, 56A, VSON-8 RoHS: Compliant	0	1:$1.3200 10:$1.1300 100:$0.8610 500:$0.7620 1000:$0.6020 2500:$0.5340

画像	モデル	説明
	Mfr.#: CSD17585F5 OMO.#: OMO-CSD17585F5	MOSFET 30V, N ch NexFET MOSFETG , single LGA 0.8x1.5, 33mOhm 3-PICOSTAR -55 to 150
	Mfr.#: CSD17577Q3A OMO.#: OMO-CSD17577Q3A	MOSFET 30V, N-channel NexFET Pwr MOSFET
	Mfr.#: CSD17310Q5A OMO.#: OMO-CSD17310Q5A	MOSFET 30V N Channel NexFET Power MOSFET
	Mfr.#: CSD17581Q5A OMO.#: OMO-CSD17581Q5A	MOSFET 30V, N ch NexFET MOSFETG , single SON5x6, 4.2mOhm 8-VSONP -55 to 150
	Mfr.#: CSD17302 OMO.#: OMO-CSD17302-TEXAS-INSTRUMENTS	ブランドニューオリジナル
	Mfr.#: CSD17306Q5 OMO.#: OMO-CSD17306Q5-TEXAS-INSTRUMENTS	ブランドニューオリジナル
	Mfr.#: CSD17507Q5A///////////// OMO.#: OMO-CSD17507Q5A--TEXAS-INSTRUMENTS	ブランドニューオリジナル
	Mfr.#: CSD17571Q2/1751 OMO.#: OMO-CSD17571Q2-1751-TEXAS-INSTRUMENTS	ブランドニューオリジナル
	Mfr.#: CSD17382F4T OMO.#: OMO-CSD17382F4T-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 2.3A PICOSTAR
	Mfr.#: CSD17327Q5A OMO.#: OMO-CSD17327Q5A-TEXAS-INSTRUMENTS	RF Bipolar Transistors MOSFET 30V,NCh Nex FET Pwr MOSFET

CSD17304Q3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes