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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| IRFW610BTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET RoHS: Not Compliant | 762 |
|
| IRFW610BTMFP001 | Fairchild Semiconductor Corporation | RoHS: Not Compliant | 1600 |
|
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: IRFW630BTM-FP001 OMO.#: OMO-IRFW630BTM-FP001 |
MOSFET 200V N-Ch B-FET |
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Mfr.#: IRFW24A OMO.#: OMO-IRFW24A-1190 |
ブランドニューオリジナル |
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Mfr.#: IRFW530 OMO.#: OMO-IRFW530-1190 |
ブランドニューオリジナル |
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Mfr.#: IRFW540ATM |
MOSFET N-CH 100V 28A D2PAK |
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Mfr.#: IRFW634B OMO.#: OMO-IRFW634B-1190 |
ブランドニューオリジナル |
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Mfr.#: IRFW640BTM-FP001 OMO.#: OMO-IRFW640BTM-FP001-1190 |
ブランドニューオリジナル |
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Mfr.#: IRFW644BTMAS003 OMO.#: OMO-IRFW644BTMAS003-1190 |
ブランドニューオリジナル |
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Mfr.#: IRFW730 OMO.#: OMO-IRFW730-1190 |
ブランドニューオリジナル |
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Mfr.#: IRFW730BTM OMO.#: OMO-IRFW730BTM-1190 |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
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Mfr.#: IRFW840BTM OMO.#: OMO-IRFW840BTM-1190 |
Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |