FDMS86181

FDMS86181
Mfr. #:
FDMS86181
メーカー:
ON Semiconductor / Fairchild
説明:
MOSFET 100V/20V N-Chnl Power Trench MOSFET
ライフサイクル:
メーカー新製品
データシート:
FDMS86181 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
FDMS86181 詳しくは
製品属性
属性値
メーカー:
オン・セミコンダクター
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
Power-56-8
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
100 V
Id-連続ドレイン電流:
124 A
Rds On-ドレイン-ソース抵抗:
12 mOhms
Vgs th-ゲート-ソースしきい値電圧:
2 V
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
42 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
125 W
構成:
独身
チャネルモード:
強化
商標名:
PowerTrench
包装:
リール
高さ:
1.1 mm
長さ:
6 mm
製品:
パワーMOSFET
シリーズ:
FDMS86181
タイプ:
PowerTrench
幅:
5 mm
ブランド:
オン・セミコンダクター/フェアチャイルド
フォワード相互コンダクタンス-最小:
116 S
立ち下がり時間:
6 ns
製品タイプ:
MOSFET
立ち上がり時間:
9 ns
ファクトリーパックの数量:
3000
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
25 ns
典型的なターンオン遅延時間:
17 ns
単位重量:
0.003175 oz
Tags
FDMS8618, FDMS861, FDMS86, FDMS8, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 124 A, 100 V, 8-Pin PQFN ON Semiconductor FDMS86181
***Semiconductor
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 124A, 4.2mΩ
***ure Electronics
N-Channel 100 V 4.2 mOhm 42 nC SMT Shielded Gate PowerTrench Mosfet - Power56
***et
Trans MOSFET N-CH 100V 44A 8-Pin Power56 T/R
***an P&S
N-CH Shielded Gate PowerTrench MOSFET
***et Europe
NM1 100V/20V NCH POWER TRENCH MOSFET
***ical
Trans MOSFET N-CH 100V 44A
***i-Key
MOSFET N-CH 100V POWER56
***ark
Mosfet, N-Ch, 100V, 124A, Power56-8; Transistor Polarity:n Channel; Continuous Drain Current Id:124A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0033Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power Rohs Compliant: Yes
***rchild Semiconductor
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 124A, POWER56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:124A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power Dissipation Pd:125W; Transistor Case Style:Power 56; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:Trench Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CANALE N, 100V 124A, POWER56-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:124A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0033ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.1V; Dissipazione di Potenza Pd:125W; Modello Case Transistor:Power 56; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:Trench Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
Shielded Gate PowerTrench® MOSFETs
ON Semiconductor Shielded Gate PowerTrench® MOSFETs are 100V N-channel MV MOSFETs developed using an advanced PowerTrench® process that integrates Shielded Gate Technology. These MOSFETs minimize on-state resistance (RDSON) and reverse recovery charge (Qrr) to deliver superior switching performance and efficiency. The small gate charge (QG), small reverse recovery charge (Qrr), and Figure of Merit (FOM) ensure fast switching for synchronous rectification applications. These device have little to no voltage overshoot, reduces voltage ringing, and lowers EMI for applications requiring a 100V-rated MOSFET such as power supplies and motor drives. In addition these MOSFET's increased power density allows wider MOSFET de-rating. These devices are 100% UIL tested and is available in a MSL1 robust package design.Learn More
モデル メーカー 説明 ストック 価格
FDMS86181
DISTI # V36:1790_14140389
ON SemiconductorTrans MOSFET N-CH 100V 44A 8-Pin Power 56 EP T/R0
    FDMS86181
    DISTI # V72:2272_14140389
    ON SemiconductorTrans MOSFET N-CH 100V 44A 8-Pin Power 56 EP T/R0
      FDMS86181
      DISTI # FDMS86181TR-ND
      ON SemiconductorMOSFET N-CH 100V 44A POWER56
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)
      On Order
      • 6000:$1.3696
      • 3000:$1.3867
      FDMS86181
      DISTI # FDMS86181CT-ND
      ON SemiconductorMOSFET N-CH 100V 44A POWER56
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)
      Temporarily Out of Stock
      • 1000:$1.4812
      • 500:$1.7563
      • 100:$2.0632
      • 10:$2.5180
      • 1:$2.8000
      FDMS86181
      DISTI # FDMS86181DKR-ND
      ON SemiconductorMOSFET N-CH 100V 44A POWER56
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Temporarily Out of Stock
      • 1000:$1.4812
      • 500:$1.7563
      • 100:$2.0632
      • 10:$2.5180
      • 1:$2.8000
      FDMS86181
      DISTI # FDMS86181
      ON SemiconductorNM1 100V/20V NCH POWER TRENCH MOSFET - Tape and Reel (Alt: FDMS86181)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
      • 3000:$1.1900
      • 6000:$1.1900
      • 12000:$1.1900
      • 18000:$1.1900
      • 30000:$1.1900
      FDMS86181
      DISTI # 01AC8567
      ON SemiconductorFET 100V 4.2 MOHM PQFN56 / REEL0
      • 5000:$1.2800
      • 2500:$1.3100
      • 1000:$1.6300
      • 500:$1.8100
      • 100:$1.9600
      • 10:$2.4400
      • 1:$2.8700
      FDMS86181
      DISTI # 512-FDMS86181
      ON SemiconductorMOSFET 100V/20V N-Chnl Power Trench MOSFET
      RoHS: Compliant
      0
      • 1:$2.8700
      • 10:$2.4400
      • 100:$1.9500
      • 500:$1.7100
      • 1000:$1.4100
      • 3000:$1.3200
      FDMS86181
      DISTI # 2781483
      ON SemiconductorMOSFET, N-CH, 100V, 124A, POWER56-8
      RoHS: Compliant
      0
      • 1000:$2.3800
      • 500:$2.8200
      • 100:$3.4700
      • 10:$4.2400
      • 1:$4.7400
      FDMS86181
      DISTI # 2781483
      ON SemiconductorMOSFET, N-CH, 100V, 124A, POWER56-80
      • 500:£1.3100
      • 250:£1.4100
      • 100:£1.5000
      • 10:£1.8800
      • 1:£2.4900
      FDMS86181ON Semiconductor 0
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        OMO.#: OMO-FDMS7698-T1-E3-1190

        ブランドニューオリジナル
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        Mfr.#: FDMS86368_F085

        OMO.#: OMO-FDMS86368-F085-1190

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        MOSFET 2N-CH 30V 12A/16A POWER56
        可用性
        ストック:
        Available
        注文中:
        5000
        数量を入力してください:
        FDMS86181の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
        参考価格(USD)
        単価
        小計金額
        1
        $2.87
        $2.87
        10
        $2.44
        $24.40
        100
        $1.95
        $195.00
        500
        $1.71
        $855.00
        1000
        $1.41
        $1 410.00
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