IPB80N06S4L07ATMA2

IPB80N06S4L07ATMA2
Mfr. #:
IPB80N06S4L07ATMA2
メーカー:
Infineon Technologies
説明:
MOSFET N-Ch 60V 80A D2PAK-2
ライフサイクル:
メーカー新製品
データシート:
IPB80N06S4L07ATMA2 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB80N06S4L07ATMA2 DatasheetIPB80N06S4L07ATMA2 Datasheet (P4-P6)IPB80N06S4L07ATMA2 Datasheet (P7-P9)
ECAD Model:
詳しくは:
IPB80N06S4L07ATMA2 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
TO-263-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
60 V
Id-連続ドレイン電流:
80 A
Rds On-ドレイン-ソース抵抗:
6.4 mOhms
構成:
独身
資格:
AEC-Q101
包装:
リール
高さ:
4.4 mm
長さ:
10 mm
シリーズ:
IPB80N06S4L
トランジスタタイプ:
1 N-Channel
幅:
9.25 mm
ブランド:
インフィニオンテクノロジーズ
製品タイプ:
MOSFET
ファクトリーパックの数量:
1000
サブカテゴリ:
MOSFET
パーツ番号エイリアス:
IPB80N06S4L-07 IPB8N6S4L7XT SP001028674
単位重量:
0.068654 oz
Tags
IPB80N06S4L0, IPB80N06S4L, IPB80N06S4, IPB80N06, IPB80N0, IPB80N, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 25, N-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon IPB80N06S4L07ATMA2
***p One Stop Japan
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***ical
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK
***et Europe
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) TO-263
***ronik
MOSFET 60V 6.4mOHM AECQ TO263
***i-Key
MOSFET N-CH 60V 80A TO263-3
***ineon
Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
モデル メーカー 説明 ストック 価格
IPB80N06S4L07ATMA2
DISTI # V36:1790_06384396
Infineon Technologies AGTrans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
    IPB80N06S4L07ATMA2
    DISTI # IPB80N06S4L07ATMA2-ND
    Infineon Technologies AGMOSFET N-CH 60V 80A TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 1000:$0.6505
    IPB80N06S4L07ATMA2
    DISTI # IPB80N06S4L07ATMA2
    Infineon Technologies AGTrans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S4L07ATMA2)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 10000:$0.5239
    • 6000:$0.5339
    • 4000:$0.5519
    • 2000:$0.5729
    • 1000:$0.5949
    IPB80N06S4L07ATMA2
    DISTI # 726-IPB80N06S4L07ATM
    Infineon Technologies AGMOSFET N-Ch 60V 80A D2PAK-2
    RoHS: Compliant
    230
    • 1:$1.3500
    • 10:$1.1500
    • 100:$0.8880
    • 500:$0.7850
    • 1000:$0.6200
    • 2000:$0.5500
    • 10000:$0.5290
    IPB80N06S4L-07
    DISTI # 726-IPB80N06S4L-07
    Infineon Technologies AGMOSFET N-Ch 60V 80A D2PAK-2 OptiMOS-T2
    RoHS: Compliant
    0
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      Surface Mount Fuses 32V .5A Fast Acting
      可用性
      ストック:
      Available
      注文中:
      1984
      数量を入力してください:
      IPB80N06S4L07ATMA2の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格(USD)
      単価
      小計金額
      1
      $1.43
      $1.43
      10
      $1.22
      $12.20
      100
      $0.94
      $94.10
      500
      $0.83
      $416.00
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