CSD19536KCS

Mfr. #:: CSD19536KCS
説明:: MOSFET N-CH 100V TO-220
ライフサイクル:: メーカー新製品
データシート:: CSD19536KCS データシート
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詳しくは:: CSD19536KCS 詳しくは CSD19536KCS Product Details

製品属性
属性値

メーカー: TI

製品カテゴリ: FET-シングル

シリーズ: NexFET

包装: チューブ

単位重量: 0.211644 oz

取り付けスタイル: スルーホール

商標名: NexFET

パッケージ-ケース: TO-220-3

テクノロジー: Si

作動温度: -55°C ~ 175°C (TJ)

取付タイプ: スルーホール

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: TO-220-3

構成: 独身

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 375W

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 100V

入力-静電容量-Ciss-Vds: 12000pF @ 50V

FET機能: 標準

Current-Continuous-Drain-Id-25°C: 150A (Ta)

Rds-On-Max-Id-Vgs: 2.7 mOhm @ 100A, 10V

Vgs-th-Max-Id: 3.2V @ 250μA

ゲートチャージ-Qg-Vgs: 153nC @ 10V

Pd-電力損失: 375 W

最高作動温度: + 175 C

最低作動温度: - 55 C

立ち下がり時間: 5 ns

立ち上がり時間: 8 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 259 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 100 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.5 V

Rds-On-Drain-Source-Resistance: 2.5 mOhms

トランジスタ-極性: Nチャネル

Qg-Gate-Charge: 118 nC

フォワード-相互コンダクタンス-最小: 307 S

Tags: CSD19536K, CSD19536, CSD1953, CSD19, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD19536KCS 詳しくは

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

モデル	説明	ストック	価格
CSD19536KCS DISTI # 296-37289-5-ND	MOSFET N-CH 100V TO-220 RoHS: Compliant Min Qty: 1 Container: Tube	1898In Stock	1000:$2.5395 500:$3.0111 100:$3.7185 50:$4.0812 10:$4.5350 1:$5.0800
CSD19536KCS DISTI # CSD19536KCS	Trans MOSFET N-CH 100V 150A 3-Pin TO-220 - Rail/Tube (Alt: CSD19536KCS) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 5	1:$2.1900 10:$2.0900 25:$2.0900 50:$1.9900 100:$1.9900 500:$1.8900 1000:$1.8900
CSD19536KCS DISTI # CSD19536KCS	Trans MOSFET N-CH 100V 150A 3-Pin TO-220 (Alt: CSD19536KCS) RoHS: Compliant Min Qty: 200	Asia - 0
CSD19536KCS DISTI # 71AC2915		0	1:$4.3700 10:$3.9300 25:$3.6900 50:$3.4500 100:$3.2100 250:$3.0100 500:$2.7300
CSD19536KCS DISTI # 38X4675	MOSFET, N CHANNEL, 100V, 150A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:150A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,MSL:-, RoHS Compliant: Yes	678	1:$4.3700 10:$3.9300 25:$3.6900 50:$3.4500 100:$3.2100 250:$3.0100 500:$2.7300
CSD19536KCS	100V, N-Channel NexFET&#153,Power MOSFET	3959	1000:$1.8700 750:$1.9100 500:$2.2100 250:$2.5400 100:$2.7200 25:$3.0300 10:$3.2500 1:$3.6100
CSD19536KCS DISTI # 595-CSD19536KCS	MOSFET 100V N-CH NexFET Pwr MOSFET RoHS: Compliant	61	1:$4.3700 10:$3.9300 100:$3.2100 250:$3.0100 500:$2.7300
CSD19536KCS DISTI # 8274919	MOSFET N-CHANNEL 100V 259A NEXFET TO-220, PK	96	2:£3.3800 26:£2.8400
CSD19536KCS DISTI # 8274919P	MOSFET N-CHANNEL 100V 259A NEXFET TO-220, TU	108	26:£2.8400
CSD19536KCS DISTI # 2419498	MOSFET, N CHANNEL, 100V, 150A, TO-220-3 RoHS: Compliant	678	1:£3.6900 10:£2.9700 100:£2.4400 250:£2.2900 500:£2.0700
CSD19536KCS DISTI # 2419498	MOSFET, N CHANNEL, 100V, 150A, TO-220-3 RoHS: Compliant	678	1:$6.9200 10:$6.2200 100:$5.1000 250:$4.7800 500:$4.3400 1000:$3.6600

画像	モデル	説明
	Mfr.#: CSD19537Q3T OMO.#: OMO-CSD19537Q3T	MOSFET 100V, N ch NexFET MOSFETG , single SON3x3, 14.5mOhm 8-VSON-CLIP -55 to 150
	Mfr.#: CSD19538Q2 OMO.#: OMO-CSD19538Q2	MOSFET 100V, N ch NexFET MOSFETG , single SON2x2, 59mOhm 6-WSON -55 to 150
	Mfr.#: CSD19502Q5BT OMO.#: OMO-CSD19502Q5BT	MOSFET N-Channel, 3.4mOhm 80V
	Mfr.#: CSD19533Q5A OMO.#: OMO-CSD19533Q5A	MOSFET 100V 7.8mOhm N-CH Pwr MOSFET
	Mfr.#: CSD19506KCS OMO.#: OMO-CSD19506KCS	MOSFET 80V N-CH Power MOSFET
	Mfr.#: CSD19505KTTT OMO.#: OMO-CSD19505KTTT	MOSFET 80V, N ch NexFET MOSFETG , single D2PAK, 3.1mOhm 3-DDPAK/TO-263 -55 to 175
	Mfr.#: CSD19533Q5AQ OMO.#: OMO-CSD19533Q5AQ-TEXAS-INSTRUMENTS	ブランドニューオリジナル
	Mfr.#: CSD19506KTTT OMO.#: OMO-CSD19506KTTT-TEXAS-INSTRUMENTS	IC MOSFET N-CH 80V TO-220
	Mfr.#: CSD19505KTT OMO.#: OMO-CSD19505KTT-TEXAS-INSTRUMENTS	MOSFET N-CH 80V 200A DDPAK-3
	Mfr.#: CSD19538Q3A OMO.#: OMO-CSD19538Q3A-TEXAS-INSTRUMENTS	MOSFET N-CH 100V 15A VSONP

CSD19536KCS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes