IRFS840BT

Mfr. #:: IRFS840BT
メーカー:: FSC
説明:: Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ライフサイクル:: メーカー新製品
データシート:: IRFS840BT データシート
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製品属性
属性値

メーカー: FSC

製品カテゴリ: ICチップ

Tags: IRFS840B, IRFS84, IRFS8, IRFS, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFS840BT 説明

***el Electronic: Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN

***et: N-CH/400V/10A/0.55OHM/SUBSTITUTE OF IRFS740 & IRFS740A

***S: French Electronic Distributor since 1988

***ser: MOSFETs 400V N-Channel B-FET

***el Nordic: Contact for details

***hard Electronics: Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN

***S: French Electronic Distributor since 1988

***i-Key: MOSFET P-CH 60V 9.7A TO-220

***ser: MOSFETs PCh/60V/9.7a/0.28Ohm

***el Electronic: Oscillators 25MHz ±25ppm 4-SMD, No Lead Tape & Reel (TR) SiT8924B XO (Standard) MEMS 0.079Lx0.063W 2.00mmx1.60mm Surface Mount OSC MEMS 25.0000MHZ LVCMOS SMD

***el Nordic: Contact for details

***ark: RAIL \ N-CH/250V/5.8A/0.45OHM/Substitute of IRFS634 & IRFS634A

***i-Key: MOSFET N-CH 250V 8.1A TO-220F

***-Wing Technology: N-CHANNEL POWER MOSFET

***ser: MOSFETs 250V N-Channel B-FET

***et: N-CH/500V/4.6A/0.85OHM/SUBSTITUTE OF IRFS840 & IRFS840A

***ser: MOSFETs 500V N-Channel B-FET

***ure Electronics: Single N-Channel 200 V 0.36 Ohm 26 nC 50 W DMOS SMT Mosfet - TO-252-3

***emi: N-Channel Power MOSFET, QFET®, 200 V, 10 A, 360 mΩ, DPAK

***ment14 APAC: MOSFET, N-CH, 200V, 7.8A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:7.8A; Source Voltage Vds:200V; On Resistance

***r Electronics: Power Field-Effect Transistor, 7.8A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Market price

モデル	メーカー	説明	ストック	価格
IRFS840BT	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	1200	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3300 1:$0.3600
IRFS840BT DISTI # 512-IRFS840BT	ON Semiconductor	MOSFET RoHS: Compliant	0

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