ZXMN6A25GTA

ZXMN6A25GTA
Mfr. #:
ZXMN6A25GTA
メーカー:
Diodes Incorporated
説明:
MOSFET N-Chan 60V MOSFET (UMOS)
ライフサイクル:
メーカー新製品
データシート:
ZXMN6A25GTA データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
ZXMN6A25GTA 詳しくは
製品属性
属性値
メーカー:
組み込まれたダイオード
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
SOT-223-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
60 V
Id-連続ドレイン電流:
6.7 A
Rds On-ドレイン-ソース抵抗:
50 mOhms
Vgs-ゲート-ソース間電圧:
20 V
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
3.9 W
構成:
独身
チャネルモード:
強化
包装:
リール
高さ:
1.65 mm
長さ:
6.7 mm
シリーズ:
ZXMN6A25
トランジスタタイプ:
1 N-Channel
幅:
3.7 mm
ブランド:
組み込まれたダイオード
立ち下がり時間:
10.6 ns
製品タイプ:
MOSFET
立ち上がり時間:
4 ns
ファクトリーパックの数量:
1000
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
26.2 ns
典型的なターンオン遅延時間:
3.8 ns
単位重量:
0.003951 oz
Tags
ZXMN6A2, ZXMN6A, ZXMN6, ZXMN, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 60 V 0.05 Ohm Power MOSFET Surface Mount - SOT-223-3
***ical
Trans MOSFET N-CH 60V 4.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
***nell
MOSFET, N, 60V, SOT-223; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:6.7A; Resistance, Rds On:0.05ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOT-223 (TO-261); Termination Type:SMD; Current, Idm Pulse:28.5A; Pin Configuration:1(G),2(D), 3(S), TAB(D); Power, Pd:2W; Typ Capacitance Ciss:1063pF; Voltage, Vds Max:60V; Voltage, Vgs th Min:1V
***ure Electronics
N-Channel 60 V 0.04 Ohm Enhancement Mode Mosfet - SOT-223
***et
Trans MOSFET N-CH 60V 7.5A 4-Pin(3+Tab) SOT-223 T/R
***ark
N CHANNEL MOSFET, 60V, 6.9A SOT-223; Transistor Polarity:N Channel; Continuous Drain Current, Id:6.9A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):0.045ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:3V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Drain Source Voltage Vds:60V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:3.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.5A; Current Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:45mohm; Package / Case:SOT-223; Power Dissipation Pd:2W; Power Dissipation Pd:3.9W; Power Dissipation Ptot Max:2W; Pulse Current Idm:30.6A; SMD Marking:ZXMN6A09; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
***ure Electronics
N-Channel 60 V 0.08 Ohm Power MOSFET Surface Mount - SOT-223-3
***sible Micro
Transistor, MOSFET, N-ch, 60V, 3.8A, SOT223, SMD
***ark
Mosfet, N-Ch, 60V, 5.3A, Sot-223 Rohs Compliant: Yes
***(Formerly Allied Electronics)
MOSFET N-Channel 60V 5.3A SOT223
***des Inc SCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***ark
MOSFET, P CH, W/DIO, 60V, 3A, SOT223; Transistor Polarity:P Channel; Continuous
***ure Electronics
ZXMP6A17G Series 60 V 0.125 Ohm P-Channel Enhancement Mode MOSFET - SOT-223
***p One Stop Global
Trans MOSFET P-CH 60V 4.3A Automotive 4-Pin(3+Tab) SOT-223 T/R
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: P Variants: Enhancement mode Power dissipation: 2 W
***icontronic
Power Field-Effect Transistor, 3A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***nell
MOSFET, P CH, W/DIO, 60V, 3A, SOT223; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.096ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (19-Dec-2012)
***eco
Transistor MOSFET N Channel 55 Volt 5.1 Amp 4 Pin 3+ Tab SOT-223
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
*** Source Electronics
Trans MOSFET N-CH Si 55V 5.1A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 55V 5.1A SOT223
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 55V,RDS(ON) 46.2 Milliohms,ID 5.1A,SOT-223,PD 1W,VF 1.3V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side
***nell
MOSFET, N, 55V, 5.1A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.1A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0462ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
***emi
N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 2.8A, 160mΩ
*** Source Electronics
Trans MOSFET N-CH 60V 2.8A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 60V 2.8A SOT-223
***ure Electronics
N-Channel 60 V 0.16 Ohm SMT Enhancement Mode Field Effect Transistor SOT-223
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:2.8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:3W; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Current Id Max:2.8A; Package / Case:SOT-223; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:1.5V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.Thesedevices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Power MOSFETs
Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.
モデル メーカー 説明 ストック 価格
ZXMN6A25GTA
DISTI # V72:2272_06708113
Zetex / Diodes IncTrans MOSFET N-CH 60V 6.7A Automotive 4-Pin(3+Tab) SOT-223 T/R
RoHS: Compliant
28
  • 25:$0.6808
  • 10:$0.8086
  • 1:$0.9529
ZXMN6A25GTA
DISTI # ZXMN6A25GTATR-ND
Diodes IncorporatedMOSFET N-CH 60V SOT223
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 1000:$0.4950
ZXMN6A25GTA
DISTI # ZXMN6A25GTACT-ND
Diodes IncorporatedMOSFET N-CH 60V SOT223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 500:$0.6458
  • 100:$0.8328
  • 10:$1.0540
  • 1:$1.1900
ZXMN6A25GTA
DISTI # ZXMN6A25GTADKR-ND
Diodes IncorporatedMOSFET N-CH 60V SOT223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 500:$0.6458
  • 100:$0.8328
  • 10:$1.0540
  • 1:$1.1900
ZXMN6A25GTA
DISTI # 27539903
Zetex / Diodes IncTrans MOSFET N-CH 60V 6.7A Automotive 4-Pin(3+Tab) SOT-223 T/R
RoHS: Compliant
28
  • 25:$0.6502
  • 14:$0.8088
ZXMN6A25GTA
DISTI # ZXMN6A25GTA
Diodes IncorporatedTrans MOSFET N-CH 60V 6.7A 4-Pin(3+Tab) SOT-223 T/R (Alt: ZXMN6A25GTA)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Asia - 5000
  • 1000:$0.5940
  • 2000:$0.5678
  • 3000:$0.5438
  • 5000:$0.5289
  • 10000:$0.5218
  • 25000:$0.5080
  • 50000:$0.4950
ZXMN6A25GTA
DISTI # ZXMN6A25GTA
Diodes IncorporatedTrans MOSFET N-CH 60V 6.7A 4-Pin(3+Tab) SOT-223 T/R - Cut TR (SOS) (Alt: ZXMN6A25GTA)
RoHS: Not Compliant
Min Qty: 1
Container: Cut Tape
Americas - 216
  • 1:$0.5109
  • 10:$0.5099
  • 25:$0.5089
  • 50:$0.5079
  • 125:$0.5059
  • 250:$0.5049
  • 500:$0.5039
ZXMN6A25GTA
DISTI # ZXMN6A25GTA
Diodes IncorporatedTrans MOSFET N-CH 60V 6.7A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: ZXMN6A25GTA)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$0.4839
  • 2000:$0.4829
  • 4000:$0.4819
  • 6000:$0.4809
  • 10000:$0.4799
ZXMN6A25GTA
DISTI # 70438844
Diodes IncorporatedMOSFET N-Channel 60V 6.7A SOT223
RoHS: Compliant
0
  • 25:$0.7700
  • 50:$0.7550
  • 125:$0.7320
  • 250:$0.7010
  • 625:$0.6550
ZXMN6A25GTA
DISTI # 522-ZXMN6A25GTA
Diodes IncorporatedMOSFET N-Chan 60V MOSFET (UMOS)
RoHS: Compliant
11667
  • 1:$0.9900
  • 10:$0.8400
  • 100:$0.6460
  • 500:$0.5710
  • 1000:$0.4500
ZXMN6A25GTAZetex / Diodes Inc 1830
    ZXMN6A25GTAZetex / Diodes Inc 221
      ZXMN6A25GTA
      DISTI # C1S205700139331
      Diodes IncorporatedTrans MOSFET N-CH 60V 6.7A 4-Pin(3+Tab) SOT-223 T/R
      RoHS: Compliant
      28
      • 25:$0.6502
      • 10:$0.8088
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      可用性
      ストック:
      17
      注文中:
      2000
      数量を入力してください:
      ZXMN6A25GTAの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格(USD)
      単価
      小計金額
      1
      $0.98
      $0.98
      10
      $0.84
      $8.40
      100
      $0.65
      $64.60
      500
      $0.57
      $285.50
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