NVD5807NT4G

Mfr. #:: NVD5807NT4G
メーカー:: ON Semiconductor
説明:: IGBT Transistors MOSFET POWER MOSFET
ライフサイクル:: メーカー新製品
データシート:: NVD5807NT4G データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

メーカー: O

製品カテゴリ: FET-シングル

シリーズ: NTD5807N

包装: リール

単位重量: 0.139332 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: TO-252-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 33 W

最高作動温度: + 175 C

最低作動温度: - 55 C

立ち下がり時間: 2 ns

立ち上がり時間: 20.4 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 23 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 40 V

Rds-On-Drain-Source-Resistance: 20 mOhms

トランジスタ-極性: Nチャネル

Qg-Gate-Charge: 12.6 nC

フォワード-相互コンダクタンス-最小: 8.1 S

Tags: NVD580, NVD58, NVD5, NVD

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NVD5807NT4G 説明

***Semiconductor: Single N-Channel Power MOSFET 40V, 23A, 31mΩ Power MOSFET 40V 23A 31 mOhm Single N-Channel DPAK

***ical: Trans MOSFET N-CH 40V 23A Automotive 3-Pin(2+Tab) DPAK T/R

***ark: Mosfet, Aec-Q101, N-Ch, 40V, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.02Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Rohs Compliant: Yes

Market price

モデル	メーカー	説明	ストック	価格
NVD5807NT4G DISTI # NVD5807NT4GOSCT-ND	ON Semiconductor	MOSFET N-CH 40V 23A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	798In Stock	500:$0.3530 100:$0.4766 10:$0.6180 1:$0.7100
NVD5807NT4G DISTI # NVD5807NT4GOSDKR-ND	ON Semiconductor	MOSFET N-CH 40V 23A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
NVD5807NT4G DISTI # NVD5807NT4GOSTR-ND	ON Semiconductor	MOSFET N-CH 40V 23A DPAK RoHS: Compliant Container: Tape & Reel (TR)	Temporarily Out of Stock
NVD5807NT4G DISTI # NVD5807NT4G	ON Semiconductor	Trans MOSFET N-CH 40V 23A 3-Pin(2+Tab) DPAK T/R (Alt: NVD5807NT4G) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	2500:$0.1941 5000:$0.1867 7500:$0.1797 12500:$0.1733 25000:$0.1673 62500:$0.1618 125000:$0.1591
NVD5807NT4G-VF01 DISTI # NVD5807NT4G-VF01	ON Semiconductor	Trans MOSFET N-CH 40V 23A 3-Pin DPAK T/R - Tape and Reel (Alt: NVD5807NT4G-VF01) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.1919 5000:$0.1909 10000:$0.1889 15000:$0.1859 25000:$0.1819
NVD5807NT4G DISTI # 76T6769	ON Semiconductor	NFET DPAK 40V 23A 31MOHM / REEL	0
NVD5807NT4G DISTI # 14AC4786	ON Semiconductor	MOSFET, AEC-Q101, N-CH, 40V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:23A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power , RoHS Compliant: Yes	0
NVD5807NT4G-VF01 DISTI # 65AC5143	ON Semiconductor	NVD5807NT4G-VF01	0	1:$0.5780 250:$0.4360 500:$0.3890 1000:$0.3500 5000:$0.3180
NVD5807NT4G DISTI # 863-NVD5807NT4G	ON Semiconductor	MOSFET POWER MOSFET RoHS: Compliant	648	1:$0.5900 10:$0.4830 100:$0.3120 1000:$0.2500 2500:$0.2110
NVD5807NT4G-VF01 DISTI # 863-NVD5807NT4G-VF01	ON Semiconductor	MOSFET NFET DPAK 40V 23A 31MOHM	0	1:$0.6500 10:$0.5330 100:$0.3250 1000:$0.2510 2500:$0.2150 10000:$0.2000 25000:$0.1890
NVD5807NT4G DISTI # 2728045	ON Semiconductor	MOSFET, AEC-Q101, N-CH, 40V, TO-252 RoHS: Compliant	286	5:£0.4140 25:£0.3880 100:£0.2360 250:£0.2100 500:£0.1850
NVD5807NT4G DISTI # 2728045	ON Semiconductor	MOSFET, AEC-Q101, N-CH, 40V, TO-252 RoHS: Compliant	221	5:$0.8640 25:$0.7410 100:$0.5060

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