IPB120N06S402ATMA2

IPB120N06S402ATMA2
Mfr. #:
IPB120N06S402ATMA2
メーカー:
Infineon Technologies
説明:
MOSFET N-Ch 60V 120A D2PAK-2
ライフサイクル:
メーカー新製品
データシート:
IPB120N06S402ATMA2 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB120N06S402ATMA2 DatasheetIPB120N06S402ATMA2 Datasheet (P4-P6)IPB120N06S402ATMA2 Datasheet (P7-P9)
ECAD Model:
詳しくは:
IPB120N06S402ATMA2 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
TO-263-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
60 V
Id-連続ドレイン電流:
120 A
Rds On-ドレイン-ソース抵抗:
2.4 mOhms
構成:
独身
資格:
AEC-Q101
包装:
リール
高さ:
4.4 mm
長さ:
10 mm
シリーズ:
IPB120N06
トランジスタタイプ:
1 N-Channel
幅:
9.25 mm
ブランド:
インフィニオンテクノロジーズ
製品タイプ:
MOSFET
ファクトリーパックの数量:
1000
サブカテゴリ:
MOSFET
パーツ番号エイリアス:
IPB120N06S4-02 IPB12N6S42XT SP001028776
単位重量:
0.068654 oz
Tags
IPB120N06S40, IPB120N06S, IPB120N06, IPB120N0, IPB120N, IPB120, IPB12, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
60V, N-Ch, 2.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
***ical
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
***et
Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R
***el Electronic
MOSFET N-CH 60V 120A TO263-3
***et
Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263
***ponent Stockers USA
120 A 60 V 0.0021 ohm N-CHANNEL Si POWER MOSFET TO-263AB
***hard Electronics
Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
***hard Electronics
VISHAY SQM120N06-3M5L-GE3 MOSFET Transistor, N Channel, 120 A, 60 V, 0.0028 ohm, 10 V, 2 V
***roFlash
SQM120N06-3m5LGE3 N-channel MOSFET Transistor, 120 A, 60 V, 2+Tab-Pin TO-263
***ical
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N-CH, 60V, 120A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:375W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited
***ineon SCT
60V, N-Ch, 3.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
***ical
Trans MOSFET N-CH 60V 90A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
N-Channel 60 V 3.4 mOhm 170 nC OptiMOS®-T2 Power-Transistor -PG-TO263-3-2
***ark
Channel Type:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:90A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:150W; No. Of Pins:3Pins Rohs Compliant: Yes
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
***ure Electronics
N-Channel 60 V 2.1 mOhm 375 W SMT TrenchFET Power Mosfet - TO-263
***ark
Mosfet, N-Ch, 60V, 120A, To-263 Rohs Compliant: Yes
*** Americas
N-CHANNEL 60-V (D-S) MOSFET
***emi
N-Channel PowerTrench® MOSFET, 60 V, 110 A, 2.7 mΩ
***ow.cn
Trans MOSFET N-CH 60V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
*** Stop Electro
Power Field-Effect Transistor, 110A I(D), 60V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
MOSFET, N-CH, 60V, 210A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
***ical
Trans MOSFET N-CH Si 60V 210A Automotive 3-Pin(2+Tab) D2PAK T/R
***ernational Rectifier
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
***ineon SCT
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
***ineon
Benefits: Advanced Process Technology; Ultra Low On-Resistance; Enhanced dV/dT and dI/dT capability; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***nell
MOSFET, N-CH, 60V, 210A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ical
Trans MOSFET N-CH 60V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
***emi
N-Channel PowerTrench® MOSFET, 60V, 110A, 1.8mΩ
***r Electronics
Power Field-Effect Transistor, 110A I(D), 60V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
モデル メーカー 説明 ストック 価格
IPB120N06S402ATMA2
DISTI # IPB120N06S402ATMA2-ND
Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$1.6945
IPB120N06S402ATMA2
DISTI # IPB120N06S402ATMA2
Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N06S402ATMA2)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$1.4900
  • 2000:$1.4900
  • 4000:$1.3900
  • 6000:$1.3900
  • 10000:$1.2900
IPB120N06S402ATMA2
DISTI # SP001028776
Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: SP001028776)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€1.7900
  • 2000:€1.4900
  • 4000:€1.3900
  • 6000:€1.2900
  • 10000:€1.1900
IPB120N06S402ATMA2
DISTI # 726-IPB120N06S402ATM
Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2
RoHS: Compliant
1000
  • 1:$2.9200
  • 10:$2.4800
  • 100:$2.1500
  • 250:$2.0400
  • 500:$1.8300
  • 1000:$1.5500
IPB120N06S4-02
DISTI # 726-IPB120N06S4-02
Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2
RoHS: Compliant
0
    IPB120N06S402ATMA2
    DISTI # 8269235P
    Infineon Technologies AGMOSFET N-CH 120A 60V OPTIMOS-T2 TO263, RL970
    • 100:£1.4810
    • 200:£1.3680
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    可用性
    ストック:
    373
    注文中:
    2356
    数量を入力してください:
    IPB120N06S402ATMA2の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $2.91
    $2.91
    10
    $2.47
    $24.70
    100
    $2.14
    $214.00
    250
    $2.03
    $507.50
    500
    $1.82
    $910.00
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