IPB50R199CP

Mfr. #:: IPB50R199CP
メーカー:: Infineon Technologies
説明:: RF Bipolar Transistors MOSFET N-Ch 550V 17A D2PAK-2 CoolMOS CP
ライフサイクル:: メーカー新製品
データシート:: IPB50R199CP データシート
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ECAD Model:
詳しくは:: IPB50R199CP 詳しくは

製品属性
属性値

メーカー: インフィニオン

製品カテゴリ: FET-シングル

シリーズ: CoolMOS CP

包装: リール

パーツエイリアス: IPB50R199CPATMA1 IPB50R199CPXT SP000236092

単位重量: 0.139332 oz

取り付けスタイル: SMD / SMT

商標名: CoolMOS

パッケージ-ケース: TO-252-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 139 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 10 ns

立ち上がり時間: 14 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 17 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 550 V

Rds-On-Drain-Source-Resistance: 199 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 80 ns

典型的なターンオン遅延時間: 35 ns

チャネルモード: 強化

Tags: IPB50R19, IPB50R1, IPB50R, IPB50, IPB5, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB50R199CP 詳しくは

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

モデル	メーカー	説明	ストック	価格
IPB50R199CPATMA1 DISTI # 30205356	Infineon Technologies AG	Trans MOSFET N-CH 550V 17A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	6000:$1.3186 2000:$1.3344 1000:$1.4304
IPB50R199CPATMA1 DISTI # IPB50R199CPATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 550V 17A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$1.7015
IPB50R199CPATMA1 DISTI # C1S322000471076	Infineon Technologies AG	MOSFETs RoHS: Compliant	1000	1000:$1.6800
IPB50R199CP DISTI # IPB50R199CP	Infineon Technologies AG	Trans MOSFET N-CH 550V 17A 3-Pin TO-263 T/R (Alt: IPB50R199CP) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 5000	1000:$1.3950 2000:$1.3377 3000:$1.3196 5000:$1.2682 10000:$1.2519 25000:$1.2206 50000:$1.1908
IPB50R199CPATMA1 DISTI # IPB50R199CPATMA1	Infineon Technologies AG	Trans MOSFET N-CH 550V 17A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB50R199CPATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 2000	1000:$1.4900 2000:$1.3900 4000:$1.3900 6000:$1.2900 10000:$1.2900
IPB50R199CPATMA1 DISTI # SP000236092	Infineon Technologies AG	Trans MOSFET N-CH 550V 17A 3-Pin TO-263 T/R (Alt: SP000236092) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.9900 2000:€1.4900 4000:€1.3900 6000:€1.3900 10000:€1.2900
IPB50R199CP DISTI # 726-IPB50R199CP	Infineon Technologies AG	MOSFET N-Ch 550V 17A D2PAK-2 CoolMOS CP RoHS: Compliant	1258	1:$2.9300 10:$2.4900 100:$2.1600 250:$2.0500 500:$1.8400 1000:$1.5500
IPB50R199CP	Infineon Technologies AG	Power Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB RoHS: Compliant	13000	1000:$1.3300 500:$1.4000 100:$1.4600 25:$1.5200 1:$1.6400
IPB50R199CPATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB RoHS: Compliant	130	1000:$1.4000 500:$1.4700 100:$1.5300 25:$1.5900 1:$1.7200
IPB50R199CPATMA1 DISTI # 8275280P	Infineon Technologies AG	MOSFET N-CH 17A 550V COOLMOS TO263, RL	1255	100:£1.5480 250:£1.4700 500:£1.3240 1000:£1.1220
IPB50R199CPATMA1 DISTI # XSFT00000025424	Infineon Technologies AG	RoHS: Compliant	4000	1000:$1.9600

画像	モデル	説明
	Mfr.#: IPB50R199CP OMO.#: OMO-IPB50R199CP	MOSFET N-Ch 550V 17A D2PAK-2 CoolMOS CP
	Mfr.#: IPB50R140CP OMO.#: OMO-IPB50R140CP	MOSFET N-Ch 550V 23A D2PAK-2 CoolMOS CP
	Mfr.#: IPB50N12S3L15ATMA1 OMO.#: OMO-IPB50N12S3L15ATMA1	MOSFET N-CHANNEL 100+
	Mfr.#: IPB50R250CPATMA1 OMO.#: OMO-IPB50R250CPATMA1	MOSFET LOW POWER_LEGACY
	Mfr.#: IPB50CN10NG OMO.#: OMO-IPB50CN10NG-1190	ブランドニューオリジナル
	Mfr.#: IPB50CN10NGATMA1 OMO.#: OMO-IPB50CN10NGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 20A TO263-3
	Mfr.#: IPB50R199CP 5R199P OMO.#: OMO-IPB50R199CP-5R199P-1190	ブランドニューオリジナル
	Mfr.#: IPB50R299CP PB-FREE OMO.#: OMO-IPB50R299CP-PB-FREE-1190	ブランドニューオリジナル
	Mfr.#: IPB50R350CP OMO.#: OMO-IPB50R350CP-1190	ブランドニューオリジナル
	Mfr.#: IPB50R299CP OMO.#: OMO-IPB50R299CP-124	Darlington Transistors MOSFET N-Ch 550V 12A D2PAK-2 CoolMOS CP

IPB50R199CP

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes