APT13005T-G1

APT13005T-G1
Mfr. #:
APT13005T-G1
メーカー:
Diodes Incorporated
説明:
Bipolar Transistors - BJT 450V NPN High Volt 700Vces 450Vceo 3.2A
ライフサイクル:
メーカー新製品
データシート:
APT13005T-G1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT13005T-G1 DatasheetAPT13005T-G1 Datasheet (P4-P6)
ECAD Model:
製品属性
属性値
メーカー:
組み込まれたダイオード
製品カテゴリ:
バイポーラトランジスタ-BJT
JBoss:
Y
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-220AB-3
トランジスタの極性:
NPN
構成:
独身
コレクター-エミッター電圧VCEOMax:
450 V
エミッタ-ベース電圧VEBO:
9 V
コレクター-エミッター飽和電圧:
300 mV
最大DCコレクタ電流:
8 A
ゲイン帯域幅積fT:
4 MHz
最低動作温度:
- 65 C
最高作動温度:
+ 150 C
シリーズ:
APT1300
DC電流ゲインhFEMax:
35 at 1 A, 5 V
包装:
チューブ
ブランド:
組み込まれたダイオード
連続コレクタ電流:
4 A
DCコレクター/ベースゲインhfe最小:
15
Pd-消費電力:
75 W
製品タイプ:
BJT-バイポーラトランジスタ
ファクトリーパックの数量:
1000
サブカテゴリ:
トランジスタ
単位重量:
0.063493 oz
Tags
APT13005, APT130, APT13, APT1, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
450V 4A NPN Power Transistor TO220AB | Diodes Inc APT13005T-G1
***et
Trans GP BJT NPN 700V 4A 3-Pin TO-220AB Tube
***i-Key
TRANS NPN 450V 4A TO220AB
***des Inc SCT
NPN, 700V, 4A, TO220AB, 75W
***emi
4.0 A, 400 V NPN Bipolar Power Transistor
***r Electronics
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***(Formerly Allied Electronics)
Transistor, Bipolar,Si,NPN,Power,VCEO 700VDC,IC 4A,PD 2W,TO-220AB,hFE 40,fT 4MHz | ON Semiconductor MJE13005G
***ical
Trans GP BJT NPN 400V 4A 3-Pin(3+Tab) TO-220AB Rail
***ark
RF Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:400V; Package/Case:3-TO-220; Power Dissipation, Pd:2W; DC Current Gain Min (hfe):8; Frequency Min:75MHz; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
***th Star Micro
These devices are designed for high-voltage high-speed power switc inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators Inverters Motor Controls Solenoid/Relay drivers and Deflection circuits.
***nell
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 2W; DC Collector Current: 4A; DC Current Gain hFE: 4hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Application Code: PHVS; Av Current Ic: 4A; Collector Emitter Saturation Voltage Vce(on): 6V; Continuous Collector Current Ic Max: 4A; Current Ic @ Vce Sat: 3A; Current Ic Continuous a Max: 4A; Current Ic hFE: 2mA; Fall Time @ Ic: 0.9µs; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 4MHz; Gain Bandwidth ft Typ: 4MHz; Hfe Min: 8; No. of Transistors: 1; Operating Temperature Min: -65°C; Power Dissipation Ptot Max: 60W; Voltage Vcbo: 700V
***-Wing Technology
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 30 @ 300mA 10V 1A 2W 10MHz
***hine Compare
Bipolar Junction Transistor (BJT) NPN 400V 1A 10MHz 2W TO-220AB
***emi
1.0 A, 400 V NPN Bipolar Power Transistor
***ment14 APAC
Transistor, NPN, 400V, TO-220; Transisto; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition
***ark
Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:400V; Transition Frequency Typ, ft:10MHz; Power Dissipation, Pd:2000mW; DC Collector Current:1A; DC Current Gain Max (hfe):30; No. of Pins:3 ;RoHS Compliant: Yes
***ical
Trans GP BJT PNP 80V 4A 30000mW 3-Pin(3+Tab) TO-220AB Tube
***emi
Power Bipolar Transistor, PNP, 4.0 A, 80 V
***r Electronics
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***ment14 APAC
TRANSISTOR, RF; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency Typ ft:40MHz; Power Dissipation Pd:30W; DC Collector Current:4A; DC Current Gain hFE:120; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Current Ic Continuous a Max:4A; Gain Bandwidth ft Typ:40MHz; Hfe Min:20; Package / Case:TO-220AB; Power Dissipation Pd:30W; Termination Type:Through Hole
モデル メーカー 説明 ストック 価格
APT13005T-G1
DISTI # V36:1790_06690845
Zetex / Diodes Inc450V NPN High Voltage Power Transistor
RoHS: Compliant
0
  • 1000000:$0.2303
  • 500000:$0.2306
  • 100000:$0.2546
  • 10000:$0.2969
  • 1000:$0.3040
APT13005T-G1
DISTI # APT13005T-G1DI-ND
Diodes IncorporatedTRANS NPN 450V 4A TO220AB
RoHS: Compliant
Min Qty: 1000
Container: Tube
Temporarily Out of Stock
  • 1000:$0.3040
APT13005T-G1
DISTI # APT13005T-G1
Diodes IncorporatedTrans GP BJT NPN 700V 4A 3-Pin TO-220AB Tube (Alt: APT13005T-G1)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€0.2039
  • 500:€0.2069
  • 100:€0.2099
  • 50:€0.2129
  • 25:€0.2159
  • 10:€0.2199
  • 1:€0.2309
APT13005T-G1
DISTI # APT13005T-G1
Diodes IncorporatedTrans GP BJT NPN 700V 4A 3-Pin TO-220AB Tube - Rail/Tube (Alt: APT13005T-G1)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 10000:$0.1939
  • 6000:$0.1979
  • 4000:$0.2079
  • 2000:$0.2179
  • 1000:$0.2289
APT13005T-G1
DISTI # 70550933
Diodes Incorporated450V 4A NPN Power Transistor TO220AB
RoHS: Compliant
0
  • 125:$0.4070
  • 250:$0.3630
  • 625:$0.3010
  • 1250:$0.2920
APT13005T-G1
DISTI # 621-APT13005T-G1
Diodes IncorporatedBipolar Transistors - BJT 450V NPN High Volt 700Vces 450Vceo 3.2A
RoHS: Compliant
920
  • 1:$0.7100
  • 10:$0.5890
  • 100:$0.3800
  • 1000:$0.3040
APT13005T-G1
DISTI # 8283335P
Zetex / Diodes Inc450V 4A NPN POWER TRANSISTOR TO220AB, TU350
  • 1250:£0.2700
  • 625:£0.2950
  • 250:£0.3060
  • 125:£0.3190
画像 モデル 説明
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Mfr.#: MC34152DG

OMO.#: OMO-MC34152DG

Gate Drivers 1.5A High Speed Dual Non-Inverting MOSFET
SN65176BD

Mfr.#: SN65176BD

OMO.#: OMO-SN65176BD

RS-485 Interface IC Differential Bus
NTCALUG02A103F

Mfr.#: NTCALUG02A103F

OMO.#: OMO-NTCALUG02A103F-VISHAY

Thermistors - NTC 10K 1% Low Therm Gradient
MC34152DG

Mfr.#: MC34152DG

OMO.#: OMO-MC34152DG-ON-SEMICONDUCTOR

Gate Drivers 1.5A High Speed Dual Non-Inverting MOSFET
SN65176BD

Mfr.#: SN65176BD

OMO.#: OMO-SN65176BD-TEXAS-INSTRUMENTS

RS-485 Interface IC Differential Bus
可用性
ストック:
920
注文中:
2903
数量を入力してください:
APT13005T-G1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$0.71
$0.71
10
$0.59
$5.89
100
$0.38
$38.00
1000
$0.30
$304.00
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