IRF7495TRPBF

IRF7495TRPBF
Mfr. #:
IRF7495TRPBF
メーカー:
Infineon / IR
説明:
MOSFET MOSFT 100V 7.3A 22mOhm 34nC Qg
ライフサイクル:
メーカー新製品
データシート:
IRF7495TRPBF データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7495TRPBF DatasheetIRF7495TRPBF Datasheet (P4-P6)IRF7495TRPBF Datasheet (P7-P8)
ECAD Model:
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
SO-8
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
100 V
Id-連続ドレイン電流:
7.3 A
Rds On-ドレイン-ソース抵抗:
22 mOhms
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
34 nC
Pd-消費電力:
2.5 W
構成:
独身
包装:
リール
高さ:
1.75 mm
長さ:
4.9 mm
トランジスタタイプ:
1 N-Channel
幅:
3.9 mm
ブランド:
インフィニオン/ IR
製品タイプ:
MOSFET
ファクトリーパックの数量:
4000
サブカテゴリ:
MOSFET
パーツ番号エイリアス:
SP001565412
単位重量:
0.019048 oz
Tags
IRF7495, IRF749, IRF74, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ponent Sense
Single N-Channel 100 V 2.5 W 34 nC Hexfet Power Mosfet Surface Mount - SOIC-8
***ure Electronics
Single N-Channel 100 V 22 mOhm 34 nC HEXFET® Power Mosfet - SOIC-8
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;SO-8;PD 2.5W;VGS +/-20
***ical
Trans MOSFET N-CH 100V 7.3A 8-Pin SOIC Tube
***ernational Rectifier
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
***p One Stop Japan
Trans MOSFET N-CH 100V 7.3A 8-Pin SOIC
***Components
MOSFET N-CHANNEL 100V 7.3A HEXFET SOIC8
***et Europe
MOSFET N-CH 100V 7.3A 8-SOIC
***trelec
MOSFET [IR] IRF7495PBF MOSFET
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side
***ukat
N-Ch 100V 7,3A 2,5W 0,022R SO8
***ronik
N-CH 100V 7,3A 22mOhm SO8
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.018Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:2.5W; No. Of Pins:8Pins Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:7.3A; Fall Time tf:36ns; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pin Configuration:(1+2+3)S,4G, (8+7+6+5)D; Pulse Current Idm:58A; Rise Time:13ns; Termination Type:Surface Mount Device; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, SO-8; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:7.3A; Napięcie drenu / źródła Vds:100V; Rezystancja przewodzenia Rds(on):0.022ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:4V; Straty mocy Pd:2.5W; Rodzaj obudowy tranzystora:SOIC; Liczba pinów:8piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018); Czas narastania:13ns; Czas opadania tf:36ns; Konfiguracja pinów:(1+2+3)S,4G, (8+7+6+5)D; Liczba tranzystorów:1; Maks. prąd Id:7.3A; Napięcie Vds, typ.:100V; Napięcie Vgs pomiaru Rds on:10V; Napięcie Vgs, maks.:20V; Prąd impulsowy Idm:58A; Temperatura robocza, min.:-55°C; Typ zakończenia:Do montażu powierzchniowego; Zakres temperatury roboczej:-55°C do +150°C
モデル メーカー 説明 ストック 価格
IRF7495TRPBF
DISTI # V72:2272_13890871
Infineon Technologies AGTrans MOSFET N-CH 100V 7.3A 8-Pin SOIC T/R
RoHS: Compliant
7964
  • 6000:$0.3730
  • 3000:$0.4722
  • 1000:$0.5244
  • 500:$0.6135
  • 250:$0.6210
  • 100:$0.6899
  • 25:$0.8516
  • 10:$0.8625
  • 1:$0.9706
IRF7495TRPBF
DISTI # IRF7495TRPBFCT-ND
Infineon Technologies AGMOSFET N-CH 100V 7.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    IRF7495TRPBF
    DISTI # IRF7495TRPBFDKR-ND
    Infineon Technologies AGMOSFET N-CH 100V 7.3A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      IRF7495TRPBF
      DISTI # IRF7495TRPBFTR-ND
      Infineon Technologies AGMOSFET N-CH 100V 7.3A 8-SOIC
      RoHS: Compliant
      Min Qty: 4000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 4000:$0.5997
      IRF7495TRPBF
      DISTI # 31271448
      Infineon Technologies AGTrans MOSFET N-CH 100V 7.3A 8-Pin SOIC T/R
      RoHS: Compliant
      16000
      • 40000:$0.3791
      • 24000:$0.3858
      • 16000:$0.4002
      • 8000:$0.4146
      • 4000:$0.4300
      IRF7495TRPBF
      DISTI # 31003682
      Infineon Technologies AGTrans MOSFET N-CH 100V 7.3A 8-Pin SOIC T/R
      RoHS: Compliant
      7964
      • 6000:$0.3730
      • 3000:$0.4722
      • 1000:$0.5244
      • 500:$0.6135
      • 250:$0.6210
      • 100:$0.6899
      • 25:$0.8516
      • 17:$0.8625
      IRF7495TRPBF
      DISTI # IRF7495TRPBF
      Infineon Technologies AGTrans MOSFET N-CH 100V 7.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7495TRPBF)
      RoHS: Compliant
      Min Qty: 4000
      Container: Reel
      Americas - 4000
      • 4000:$0.4479
      • 8000:$0.4319
      • 16000:$0.4169
      • 24000:$0.4019
      • 40000:$0.3949
      IRF7495TRPBF
      DISTI # 70017718
      Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 18 Milliohms,ID 7.3A,SO-8,PD 2.5W,VGS +/-20
      RoHS: Compliant
      0
      • 4000:$1.7000
      IRF7495TRPBF
      DISTI # 942-IRF7495TRPBF
      Infineon Technologies AGMOSFET MOSFT 100V 7.3A 22mOhm 34nC Qg
      RoHS: Compliant
      3593
      • 1:$1.2800
      • 10:$1.1000
      • 100:$0.8380
      • 500:$0.7400
      • 1000:$0.5850
      IRF7495TRPBFInfineon Technologies AGSingle N-Channel 100 V 22 mOhm 51 nC HEXFET Power Mosfet - SOIC-8
      RoHS: Compliant
      8000Reel
      • 4000:$0.4800
      IRF7495TRPBFInternational Rectifier7.3 A, 100 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA20
      • 15:$0.7200
      • 4:$1.0800
      • 1:$1.4400
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      LCMXO2-640HC-5TG100I

      Mfr.#: LCMXO2-640HC-5TG100I

      OMO.#: OMO-LCMXO2-640HC-5TG100I-LATTICE-SEMICONDUCTOR

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      CRCW080510K0FKEAC

      Mfr.#: CRCW080510K0FKEAC

      OMO.#: OMO-CRCW080510K0FKEAC-VISHAY-DALE

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      CRCW12064K02FKEAC

      Mfr.#: CRCW12064K02FKEAC

      OMO.#: OMO-CRCW12064K02FKEAC-VISHAY-DALE

      D25/CRCW1206-C 100 4K02 1% ET1
      可用性
      ストック:
      Available
      注文中:
      1991
      数量を入力してください:
      IRF7495TRPBFの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格(USD)
      単価
      小計金額
      1
      $1.27
      $1.27
      10
      $1.09
      $10.90
      100
      $0.84
      $83.80
      500
      $0.74
      $370.00
      1000
      $0.58
      $585.00
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