MSC015SMA070B

MSC015SMA070B
Mfr. #:
MSC015SMA070B
メーカー:
Microchip / Microsemi
説明:
MOSFET UNRLS, FG, SIC MOSFET, TO-247
ライフサイクル:
メーカー新製品
データシート:
MSC015SMA070B データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
MSC015SMA070B 詳しくは
製品属性
属性値
メーカー:
マイクロチップ
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
SiC
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-247-3
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
700 V
Rds On-ドレイン-ソース抵抗:
19 mOhms
最低動作温度:
- 55 C
最高作動温度:
+ 175 C
包装:
チューブ
ブランド:
マイクロチップ/マイクロセミ
製品タイプ:
MOSFET
ファクトリーパックの数量:
1
サブカテゴリ:
MOSFET
Tags
MSC01, MSC0, MSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Next Generation SiC MOSFETs
Microsemi / Microchip Next Generation Silicon Carbide (SiC) MOSFETs provide good dynamic and thermal performance compared to the Silicon (Si) power MOSFETs. These MOSFETs come with low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs are capable of stable operation at 175°C high junction temperature. These MOSFETs provide high-efficiency with low switching losses. The SiC MOSFETs does not require any freewheeling diodes and reduces the system cost. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply as well as distribution.
画像 モデル 説明
E3M0065090D

Mfr.#: E3M0065090D

OMO.#: OMO-E3M0065090D

MOSFET 900V 65mOhms G3 SiC MOSFET
C3M0120100K

Mfr.#: C3M0120100K

OMO.#: OMO-C3M0120100K

MOSFET 1000V 120mOhm G3 SiC MOSFET TO-247-4
SN74AHC1G09DBVR

Mfr.#: SN74AHC1G09DBVR

OMO.#: OMO-SN74AHC1G09DBVR

Logic Gates Sgl 2Inp Pos-AND Gate
LSIC1MO120E0080

Mfr.#: LSIC1MO120E0080

OMO.#: OMO-LSIC1MO120E0080

MOSFET 1200V 80mOhm SiC MOSFET
LSIC1MO120E0080

Mfr.#: LSIC1MO120E0080

OMO.#: OMO-LSIC1MO120E0080-LITTELFUSE

MOSFET SIC 1200V 39A TO247-3
C3M0120100K

Mfr.#: C3M0120100K

OMO.#: OMO-C3M0120100K-WOLFSPEED

MOSFET N-CH 1000V 22A TO247-4L
SN74AHC1G09DBVR

Mfr.#: SN74AHC1G09DBVR

OMO.#: OMO-SN74AHC1G09DBVR-TEXAS-INSTRUMENTS

Logic Gates Sgl 2Inp Pos-AND Gate
E3M0065090D

Mfr.#: E3M0065090D

OMO.#: OMO-E3M0065090D-WOLFSPEED

E-SERIES 900V, 65 MOHM, G3 SIC M
可用性
ストック:
47
注文中:
2030
数量を入力してください:
MSC015SMA070Bの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$54.26
$54.26
5
$52.84
$264.20
10
$50.74
$507.40
25
$48.96
$1 224.00
50
$46.44
$2 322.00
100
$43.60
$4 360.00
250
$40.73
$10 182.50
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