IPD80R450P7ATMA1

IPD80R450P7ATMA1
Mfr. #:
IPD80R450P7ATMA1
メーカー:
Infineon Technologies
説明:
MOSFET
ライフサイクル:
メーカー新製品
データシート:
IPD80R450P7ATMA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
IPD80R450P7ATMA1 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
TO-252-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
800 V
Id-連続ドレイン電流:
11 A
Rds On-ドレイン-ソース抵抗:
450 mOhms
Vgs th-ゲート-ソースしきい値電圧:
3 V
Vgs-ゲート-ソース間電圧:
30 V
Qg-ゲートチャージ:
24 nC
最低動作温度:
- 50 C
最高作動温度:
+ 150 C
Pd-消費電力:
73 W
構成:
独身
チャネルモード:
強化
商標名:
CoolMOS
包装:
リール
高さ:
2.3 mm
長さ:
6.5 mm
シリーズ:
CoolMOS P7
幅:
6.22 mm
ブランド:
インフィニオンテクノロジーズ
立ち下がり時間:
10 ns
製品タイプ:
MOSFET
立ち上がり時間:
6 ns
ファクトリーパックの数量:
2500
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
40 ns
典型的なターンオン遅延時間:
10 ns
パーツ番号エイリアス:
IPD80R450P7 SP001422626
単位重量:
0.011993 oz
Tags
IPD80R4, IPD80R, IPD80, IPD8, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 0.45 Ohm 24 nC CoolMOS™ Power Mosfet - DPAK
***ark
Mosfet, N-Ch, 800V, 11A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.38Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
モデル メーカー 説明 ストック 価格
IPD80R450P7ATMA1
DISTI # V72:2272_16563310
Infineon Technologies AGTrans MOSFET N-CH 800V 11A 3-Pin(2+Tab) TO-252 T/R1735
  • 1000:$0.8550
  • 500:$1.0428
  • 250:$1.1006
  • 100:$1.2245
  • 25:$1.4967
  • 10:$1.5197
  • 1:$1.9626
IPD80R450P7ATMA1
DISTI # V36:1790_16563310
Infineon Technologies AGTrans MOSFET N-CH 800V 11A 3-Pin(2+Tab) TO-252 T/R0
  • 2500000:$0.7159
  • 1250000:$0.7163
  • 250000:$0.7634
  • 25000:$0.8553
  • 2500:$0.8712
IPD80R450P7ATMA1
DISTI # IPD80R450P7ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 800V 11A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
279In Stock
  • 1000:$0.9638
  • 500:$1.1632
  • 100:$1.4158
  • 10:$1.7610
  • 1:$1.9600
IPD80R450P7ATMA1
DISTI # IPD80R450P7ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 800V 11A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
279In Stock
  • 1000:$0.9638
  • 500:$1.1632
  • 100:$1.4158
  • 10:$1.7610
  • 1:$1.9600
IPD80R450P7ATMA1
DISTI # IPD80R450P7ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 800V 11A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$0.8389
  • 2500:$0.8712
IPD80R450P7ATMA1
DISTI # 33632610
Infineon Technologies AGTrans MOSFET N-CH 800V 11A 3-Pin(2+Tab) TO-252 T/R2500
  • 2500:$0.7698
IPD80R450P7ATMA1
DISTI # 30182135
Infineon Technologies AGTrans MOSFET N-CH 800V 11A 3-Pin(2+Tab) TO-252 T/R1735
  • 9:$1.9626
IPD80R450P7ATMA1
DISTI # IPD80R450P7ATMA1
Infineon Technologies AGTrans MOSFET N 800V 11A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R450P7ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.7799
  • 15000:$0.7949
  • 10000:$0.8219
  • 5000:$0.8529
  • 2500:$0.8849
IPD80R450P7ATMA1
DISTI # SP001422626
Infineon Technologies AGTrans MOSFET N 800V 11A 3-Pin TO-252 T/R (Alt: SP001422626)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 25000:€0.6819
  • 15000:€0.7309
  • 10000:€0.7869
  • 5000:€0.8519
  • 2500:€1.0229
IPD80R450P7ATMA1
DISTI # IPD80R450P7
Infineon Technologies AGTrans MOSFET N 800V 11A 3-Pin TO-252 T/R (Alt: IPD80R450P7)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
  • 125000:$0.7780
  • 62500:$0.7880
  • 25000:$0.7982
  • 12500:$0.8087
  • 7500:$0.8305
  • 5000:$0.8536
  • 2500:$0.8780
IPD80R450P7ATMA1
DISTI # 16AC3362
Infineon Technologies AGMOSFET, N-CH, 800V, 11A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.38ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes1941
  • 1000:$0.9010
  • 500:$1.0800
  • 250:$1.1600
  • 100:$1.2400
  • 50:$1.3400
  • 25:$1.4400
  • 10:$1.5500
  • 1:$1.8200
IPD80R450P7ATMA1
DISTI # 726-IPD80R450P7ATMA1
Infineon Technologies AGMOSFET
RoHS: Compliant
4674
  • 1:$1.8000
  • 10:$1.5300
  • 100:$1.2300
  • 500:$1.0700
  • 1000:$0.8920
IPD80R450P7ATMA1
DISTI # 1300908P
Infineon Technologies AGMOSFET N-CH 800V 11A COOLMOS P7 TO-252, RL598
  • 1000:£0.8900
  • 500:£0.9150
  • 100:£1.1600
  • 10:£1.3500
IPD80R450P7ATMA1
DISTI # 2750416
Infineon Technologies AGMOSFET, N-CH, 800V, 11A, TO-2521551
  • 500:£0.8320
  • 250:£0.8930
  • 100:£0.9540
  • 10:£1.2300
  • 1:£1.5900
IPD80R450P7ATMA1
DISTI # 2750416
Infineon Technologies AGMOSFET, N-CH, 800V, 11A, TO-252
RoHS: Compliant
1941
  • 1000:$1.4600
  • 500:$1.7600
  • 100:$2.1400
  • 10:$2.6600
  • 1:$2.9500
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1.5SMC440CA

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TVS Diodes / ESD Suppressors 1.5kW 440V 5% Bi-Directional
SM6T150CA

Mfr.#: SM6T150CA

OMO.#: OMO-SM6T150CA

TVS Diodes / ESD Suppressors 600W 150V Bidirect
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TVS Diodes / ESD Suppressors 200W 18V 5% Uni-directional
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Schottky Diodes & Rectifiers 300mA 40 Volt
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Mfr.#: LT8302ES8E#PBF

OMO.#: OMO-LT8302ES8E-PBF

Switching Voltage Regulators 42VIN Micropower No-Opto Isolated Flyback Converter with 65V/4.5A Switch
SMF18A

Mfr.#: SMF18A

OMO.#: OMO-SMF18A-LITTELFUSE

TVS Diodes - Transient Voltage Suppressors 18V 200W 6.8A 5% Unidirectional
SM6T150CA

Mfr.#: SM6T150CA

OMO.#: OMO-SM6T150CA-STMICROELECTRONICS

TVS DIODE 128V 265V SMB
可用性
ストック:
Available
注文中:
1987
数量を入力してください:
IPD80R450P7ATMA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$1.80
$1.80
10
$1.53
$15.30
100
$1.23
$123.00
500
$1.07
$535.00
1000
$0.89
$892.00
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