CSD16556Q5B

Mfr. #:: CSD16556Q5B
説明:: Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R
ライフサイクル:: メーカー新製品
データシート:: CSD16556Q5B データシート
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ECAD Model:
詳しくは:: CSD16556Q5B 詳しくは CSD16556Q5B Product Details

製品属性
属性値

メーカー: テキサスインスツルメンツ

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: CSD16556Q5B

包装: リール

取り付けスタイル: SMD / SMT

商標名: NexFET

パッケージ-ケース: VSON-Clip-8

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 3.2 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 13 ns

立ち上がり時間: 34 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 40 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 25 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.4 V

Rds-On-Drain-Source-Resistance: 1.5 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 25 ns

典型的なターンオン遅延時間: 17 ns

Qg-Gate-Charge: 37 nC

フォワード-相互コンダクタンス-最小: 2 S

Tags: CSD165, CSD16, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD16556Q5B 詳しくは

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

モデル	説明	ストック	価格
CSD16556Q5B DISTI # V39:1801_07248751	Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R RoHS: Compliant	2500	2500:$0.9826
CSD16556Q5B DISTI # 296-35627-1-ND	MOSFET N-CH 25V 100A 8VSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	12135In Stock	1000:$1.2321 500:$1.4871 100:$1.9119 10:$2.3790 1:$2.6300
CSD16556Q5B DISTI # 296-35627-6-ND	MOSFET N-CH 25V 100A 8VSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	12135In Stock	1000:$1.2321 500:$1.4871 100:$1.9119 10:$2.3790 1:$2.6300
CSD16556Q5B DISTI # 296-35627-2-ND	MOSFET N-CH 25V 100A 8VSON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	7500In Stock	2500:$1.1138
CSD16556Q5B DISTI # 30270560	Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R RoHS: Compliant	2500	2500:$0.9826
CSD16556Q5B DISTI # CSD16556Q5B	Trans MOSFET N-CH 25V 40A 8-Pin VSON EP T/R - Tape and Reel (Alt: CSD16556Q5B) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$1.0879 5000:$1.0349 10000:$1.0009 15000:$0.9669 25000:$0.9409
CSD16556Q5B DISTI # CSD16556Q5B	Trans MOSFET N-CH 25V 40A 8-Pin VSON EP T/R (Alt: CSD16556Q5B) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
CSD16556Q5B DISTI # 63W5303	MOSFET, N CHANNEL, 25V, 100A, 0.0009OHM, SON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0009ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.4V , RoHS Compliant: Yes	1412	1:$0.5760 10:$0.5760 25:$0.5760 50:$0.5760 100:$0.5760 250:$0.5760 500:$0.5760 1000:$0.5760
CSD16556Q5B	25V NexFET N Channel Power MosFET	6920	1000:$0.8500 750:$0.8900 500:$1.0600 250:$1.2500 100:$1.3300 25:$1.5200 10:$1.6300 1:$1.8100
CSD16556Q5B DISTI # 595-CSD16556Q5B	MOSFET 25V NexFET N Ch Pwr MosFET RoHS: Compliant	2600	1:$2.2100 10:$1.8800 100:$1.5000 500:$1.3200 1000:$1.0900 2500:$1.0200
CSD16556Q5B	Power Field-Effect Transistor, 40A I(D), 25V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	19589	1000:$1.1000 500:$1.1600 100:$1.2100 25:$1.2600 1:$1.3600
CSD16556Q5B DISTI # C1S746202951646	Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R RoHS: Compliant	2500	2500:$0.9826
CSD16556Q5B DISTI # 2413568	MOSFET, N CHANNEL, 25V, 100A, 0.0009OHM, RoHS: Compliant	1412	1:£1.6700 10:£1.3300 25:£1.2800 50:£1.2200 100:£1.1800
CSD16556Q5B DISTI # 2413568	MOSFET, N CHANNEL, 25V, 100A, 0.0009OHM, SON-8 RoHS: Compliant	1412	1:$3.5000 10:$2.9800 100:$2.3800 500:$2.0900 1000:$1.7300 2500:$1.6200

画像	モデル	説明
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	Mfr.#: CSD16570Q5BT OMO.#: OMO-CSD16570Q5BT-TEXAS-INSTRUMENTS	MOSFET N-CH 25V 100A 8VSON
	Mfr.#: CSD16327Q3 OMO.#: OMO-CSD16327Q3-TEXAS-INSTRUMENTS	Trans MOSFET N-CH 25V 21A 8-Pin VSON-CLIP EP T/R
	Mfr.#: CSD16340Q3 OMO.#: OMO-CSD16340Q3-TEXAS-INSTRUMENTS	MOSFET N-CH 25V 60A 8SON

CSD16556Q5B

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes