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MRF8HP21130HSR3

MRF8HP21130HSR3
Mfr. #:
MRF8HP21130HSR3
メーカー:
NXP / Freescale
説明:
RF MOSFET Transistors HV8 2.1GHZ 130W NI780S-4
ライフサイクル:
メーカー新製品
データシート:
MRF8HP21130HSR3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー：
NXP
製品カテゴリ：
RFMOSFETトランジスタ
JBoss：
Y
トランジスタの極性：
Nチャネル
テクノロジー：
Si
Vds-ドレイン-ソース間降伏電圧：
65 V
利得：
14.2 dB
出力電力：
28 W
最高作動温度：
+ 150 C
取り付けスタイル：
SMD / SMT
パッケージ/ケース：
NI-780S-4
包装：
リール
構成：
独身
動作周波数：
2.11 GHz to 2.17 GHz
シリーズ：
MRF8HP21130H
ブランド：
NXP /フリースケール
製品タイプ：
RFMOSFETトランジスタ
ファクトリーパックの数量：
250
サブカテゴリ：
MOSFET
Vgs-ゲート-ソース間電圧：
10 V
Vgs th-ゲート-ソースしきい値電圧：
2.7 V
単位重量：
0.231270 oz
Tags
MRF8HP21130HS, MRF8HP211, MRF8H, MRF8, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V
***ical
Trans RF MOSFET N-CH 65V 5-Pin Case 465H-02 T/R
*** Electronic Components
RF MOSFET Transistors HV8 2.1GHZ 130W NI780S-4
***el Electronic
Gate Drivers INTEGRATED DRIVER MOSFET
***or
FET RF 2CH 65V 2.17GHZ NI780S-4
***ure Electronics
N-Channel 50 V 16 A 0.047 Ohm Surface Mount Power Mosfet - TO-252AA
***emi
N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ
***ment14 APAC
MOSFET, N-CH, 50V, 16A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Source Voltage Vds:50V; On Resistance
***roFlash
Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.
***ure Electronics
Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - SOT-223-3
***ical
Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R
***nsix Microsemi
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***emi
N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ
***ure Electronics
N-Channel 50 V 0.1 Ohm Surface Mount Logic Level Power Mosfet - TO-252AA
***r Electronics
Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ment14 APAC
MOSFET, N, LOGIC, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:50V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:14A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:48W; Power Dissipation Pd:40W; Pulse Current Idm:20A; SMD Marking:RFD14N05; Termination Type:SMD; Voltage Vds Typ:50V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
***rchild Semiconductor
These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.
***(Formerly Allied Electronics)
IRLR014PBF N-channel MOSFET Transistor, 7.7 A, 60 V, 3-Pin DPAK
***ure Electronics
Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - TO-252
***nell
MOSFET, N, 60V, 7.7A, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.7A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 25W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; Alternate Case Style: D-PAK; Current Id Max: 7.7A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 0°C/W; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 31A; SMD Marking: IRLR014; Voltage Vds: 60V; Voltage Vds Typ: 60V; Voltage Vgs Max: 10V; Voltage Vgs Rds on Measurement: 5V; Voltage Vgs th Max: 2V
***(Formerly Allied Electronics)
IRLR014TRPBF N-channel MOSFET Transistor; 7.7 A; 60 V; 3-Pin TO-252
***ure Electronics
Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - DPAK (TO-252)
***ark
N CHANNEL MOSFET, 60V, 7.7A, D-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:7.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
***emi
N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ
***ure Electronics
N-Channel 50 V 0.1 Ohm Surface Mount Logic Level Power Mosfet - TO-252AA
***r Electronics
Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ment14 APAC
N CHANNEL MOSFET, 50V, 14mA; Transistor; N CHANNEL MOSFET, 50V, 14mA; Transistor Polarity:N Channel; Continuous Drain Current Id:14mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V
***rchild Semiconductor
These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.
モデル メーカー 説明 ストック 価格
MRF8HP21130HSR3
DISTI # V36:1790_19197355		NXP SemiconductorsTrans RF MOSFET N-CH 65V 5-Pin Case 465H-02 T/R4586
  • 2500:$9.4600
  • 1000:$9.5800
  • 500:$9.6900
  • 250:$9.8100
MRF8HP21130HSR3
DISTI # MRF8HP21130HSR3-ND		NXP SemiconductorsFET RF 2CH 65V 2.17GHZ NI780S-4
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		Limited Supply - Call
    MRF8HP21130HSR3
    DISTI # 30308706    		NXP SemiconductorsTrans RF MOSFET N-CH 65V 5-Pin Case 465H-02 T/R4500
    • 2500:$9.4600
    • 1000:$9.5800
    • 500:$9.6900
    • 250:$9.8100
    MRF8HP21130HSR3
    DISTI # MRF8HP21130HSR3    		Avnet, Inc.HV8 2.1GHZ 130W NI780S-4 - Bulk (Alt: MRF8HP21130HSR3)
    Min Qty: 5
    Container: Bulk    		Americas - 0
    • 50:$69.0900
    • 25:$70.3900
    • 15:$73.0900
    • 10:$75.9900
    • 5:$79.0900
    MRF8HP21130HSR3Freescale SemiconductorRF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
    RoHS: Compliant    		1985
    • 1000:$71.4900
    • 500:$75.2500
    • 100:$78.3400
    • 25:$81.7000
    • 1:$87.9800
    画像 モデル 説明
    MRF8HP21080HR3

    Mfr.#: MRF8HP21080HR3

    OMO.#: OMO-MRF8HP21080HR3

    		 RF MOSFET Transistors HV8 2.1GHZ 160W NI780H-4
    MRF8HP21080HSR3

    Mfr.#: MRF8HP21080HSR3

    OMO.#: OMO-MRF8HP21080HSR3

    		 RF MOSFET Transistors HV8 2.1GHZ 160W NI780S-4
    MRF8HP21080HR5

    Mfr.#: MRF8HP21080HR5

    OMO.#: OMO-MRF8HP21080HR5

    		 RF MOSFET Transistors HV8 2.1GHZ 160W NI780H-4
    MRF8HP21130HSR5

    Mfr.#: MRF8HP21130HSR5

    OMO.#: OMO-MRF8HP21130HSR5-NXP-SEMICONDUCTORS

    		 FET RF 2CH 65V 2.17GHZ NI780S-4
    MRF8HP21080HR5

    Mfr.#: MRF8HP21080HR5

    OMO.#: OMO-MRF8HP21080HR5-NXP-SEMICONDUCTORS

    		 FET RF 2CH 65V 2.17GHZ NI780-4
    MRF8HP21130HS

    Mfr.#: MRF8HP21130HS

    OMO.#: OMO-MRF8HP21130HS-1190

    		 ブランドニューオリジナル
    MRF8HP21130HR3

    Mfr.#: MRF8HP21130HR3

    OMO.#: OMO-MRF8HP21130HR3-NXP-SEMICONDUCTORS

    		 FET RF 2CH 65V 2.17GHZ NI780-4
    MRF8HP21130HSR3

    Mfr.#: MRF8HP21130HSR3

    OMO.#: OMO-MRF8HP21130HSR3-NXP-SEMICONDUCTORS

    		 FET RF 2CH 65V 2.17GHZ NI780S-4
    MRF8HP21080HR3

    Mfr.#: MRF8HP21080HR3

    OMO.#: OMO-MRF8HP21080HR3-NXP-SEMICONDUCTORS

    		 FET RF 2CH 65V 2.17GHZ NI780-4
    MRF8HP21080HSR3

    Mfr.#: MRF8HP21080HSR3

    OMO.#: OMO-MRF8HP21080HSR3-NXP-SEMICONDUCTORS

    		 FET RF 2CH 65V 2.17GHZ NI780S-4
    可用性
    ストック:
    Available
    注文中:
    3500
    数量を入力してください:
    MRF8HP21130HSR3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
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