We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| BSC016N03MSGATMA1 DISTI # 31312055 | Infineon Technologies AG | Trans MOSFET N-CH 30V 28A 8-Pin TDSON EP T/R RoHS: Compliant | 5000 |
|
| BSC016N03MSGATMA1 DISTI # BSC016N03MSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC016N03MSGATMA1 DISTI # BSC016N03MSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| BSC016N03MSGATMA1 DISTI # BSC016N03MSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| BSC016N03MSGATMA1 DISTI # C1S322000464252 | Infineon Technologies AG | Trans MOSFET N-CH 30V 28A 8-Pin TDSON EP T/R RoHS: Compliant | 5000 |
|
| BSC016N03MS G DISTI # BSC016N03MS G | Infineon Technologies AG | Trans MOSFET N-CH 30V 28A 8-Pin TDSON T/R (Alt: BSC016N03MS G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 | |
| BSC016N03MSGATMA1 DISTI # BSC016N03MSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 28A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC016N03MSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC016N03MSGATMA1 DISTI # 60R2473 | Infineon Technologies AG | MOSFET, N CH, 100A, 30V, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):1.3mohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:125W,Operating RoHS Compliant: Yes | 0 |
|
| BSC016N03MS G DISTI # 726-BSC016N03MSG | Infineon Technologies AG | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M RoHS: Compliant | 6932 |
|
| BSC016N03MSG | Infineon Technologies AG | Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 44188 |
|
| BSC016N03MS G | Infineon Technologies AG | 30 | ||
| BSC016N03MSGATMA1 DISTI # BSC016N03MSGATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,30V,100A,125W,PG-TDSON-8 | 4821 |
|
| BSC016N03MSGATMA1 DISTI # 1775423 | Infineon Technologies AG | MOSFET, N CH, 100A, 30V, PG-TDSON-8 RoHS: Compliant | 1844 |
|
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: BSC016N06NSTATMA1 OMO.#: OMO-BSC016N06NSTATMA1 |
MOSFET DIFFERENTIATED MOSFETS |
|
Mfr.#: BSC016N06NS OMO.#: OMO-BSC016N06NS |
MOSFET N-Ch 60V 100A DSON-8 OptiMOS |
|
|
Mfr.#: BSC016N04LS G OMO.#: OMO-BSC016N04LS-G |
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 |
|
Mfr.#: BSC016N03LSG , TDA18275A |
ブランドニューオリジナル |
|
Mfr.#: BSC016N03MSGATMA1 |
MOSFET N-CH 30V 100A TDSON-8 |
|
|
Mfr.#: BSC016N04LS OMO.#: OMO-BSC016N04LS-1190 |
100 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET |
|
|
Mfr.#: BSC016N04LS G OMO.#: OMO-BSC016N04LS-G-1190 |
Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP |
|
|
Mfr.#: BSC016N04LSG OMO.#: OMO-BSC016N04LSG-1190 |
100 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET |
|
|
Mfr.#: BSC016N06NS , TDA3629T , |
ブランドニューオリジナル |
|
|
Mfr.#: BSC016N03LS G OMO.#: OMO-BSC016N03LS-G-128 |
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 |
