STU6NF10

STU6NF10
Mfr. #:
STU6NF10
メーカー:
STMicroelectronics
説明:
MOSFET N-Ch, 100V-0.22ohms 6A
ライフサイクル:
メーカー新製品
データシート:
STU6NF10 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
STU6NF10 DatasheetSTU6NF10 Datasheet (P4-P6)STU6NF10 Datasheet (P7-P9)STU6NF10 Datasheet (P10-P12)STU6NF10 Datasheet (P13-P14)
ECAD Model:
詳しくは:
STU6NF10 詳しくは STU6NF10 Product Details
製品属性
属性値
メーカー:
STMicroelectronics
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-251-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
100 V
Id-連続ドレイン電流:
6 A
Rds On-ドレイン-ソース抵抗:
250 mOhms
Vgs-ゲート-ソース間電圧:
20 V
最低動作温度:
- 65 C
最高作動温度:
+ 175 C
Pd-消費電力:
30 W
構成:
独身
チャネルモード:
強化
商標名:
STripFET
包装:
チューブ
シリーズ:
STU6NF10
トランジスタタイプ:
1 N-Channel
ブランド:
STMicroelectronics
立ち下がり時間:
3 ns
製品タイプ:
MOSFET
立ち上がり時間:
10 ns
ファクトリーパックの数量:
3000
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
20 ns
典型的なターンオン遅延時間:
6 ns
単位重量:
0.139332 oz
Tags
STU6N, STU6, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET͐2;2; Power MOSFET
*** Source Electronics
Trans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 100V 6A IPAK
***r Electronics
Power Field-Effect Transistor, 6A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ure Electronics
Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - IPAK (TO-251)
***ark
N Channel Mosfet, 100V, 7.7A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:7.7A; On Resistance Rds(On):0.27Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No
*** Stop Electro
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;I-Pak (TO-251AA);PD 48W
***ure Electronics
Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-251AA
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***SIT Distribution GmbH
Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
N Channel Mosfet, 100V, 9.4A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.4A; On Resistance Rds(On):0.21Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.4 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 210 / Gate-Source Voltage V = 20 / Fall Time ns = 23 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 4.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 48
***ment14 APAC
MOSFET, N, 100V, 9.1A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):210mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:9.4A; Current Temperature:25°C; Fall Time tf:23ns; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:38A; Rise Time:23ns; SMD Marking:IRFU120N; Termination Type:Through Hole; Turn Off Time:32ns; Turn On Time:4.5ns; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***-Wing Technology
Tube Through Hole N-Channel Single Mosfet Transistor 8.4A Tc 8.4A 32W 28ns
***Yang
Trans MOSFET N-CH 100V 8.4A 3-Pin(3+Tab) IPAK Rail - Bulk
***inecomponents.com
N-CH/100V/8.4A/0.2OHM/Substitute of IRFU120TU & IRFU120A
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:8.4A; On Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***emi
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 10 A, 180 mΩ, IPAK
***ark
MOSFET Transistor, N Channel, 10 A, 100 V, 0.142 ohm, 10 V, 2 V
***r Electronics
Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
MOSFET, N CH, 100V, 10A, TO-251AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.142ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V;
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***(Formerly Allied Electronics)
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;I-Pak (TO-251AA);PD 66W
***ineon SCT
-100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ure Electronics
Single P-Channel 100 V 205 mOhm 58 nC HEXFET® Power Mosfet - IPAK
***SIT Distribution GmbH
Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):205mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***nell
MOSFET, P, I-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.205ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 66W; Transistor Case Style: TO-251AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Alternate Case Style: TO-251; Current Id Max: -13A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Length: 9.65mm; Lead Spacing: 2.28mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 52A; SMD Marking: IRFU5410PBF; Termination Type: Through Hole; Turn Off Time: 45ns; Turn On Time: 15ns; Voltage Vds Typ: -100V; Voltage Vgs Max: -4V; Voltage Vgs Rds on Measurement: -10V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Through Hole Power Mosfet - IPAK (TO-251)
***SIT Distribution GmbH
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
MOSFET, N-CH, 100V, 4.3A, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.3A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 25W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Operating Temperature Min: -55°C
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
モデル メーカー 説明 ストック 価格
STU6NF10
DISTI # V36:1790_06567881
STMicroelectronicsTrans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK T/R
RoHS: Compliant
0
    STU6NF10
    DISTI # 497-12700-5-ND
    STMicroelectronicsMOSFET N-CH 100V 6A IPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    655In Stock
    • 5025:$0.5077
    • 2550:$0.5344
    • 525:$0.7252
    • 150:$0.8779
    • 75:$1.0688
    • 10:$1.1260
    • 1:$1.2600
    STU6NF10
    DISTI # STU6NF10
    STMicroelectronicsTrans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK T/R (Alt: STU6NF10)
    RoHS: Compliant
    Min Qty: 75
    Container: Tape and Reel
    Europe - 0
    • 750:€0.1969
    • 450:€0.2259
    • 300:€0.2599
    • 150:€0.3189
    • 75:€0.3999
    STU6NF10
    DISTI # STU6NF10
    STMicroelectronicsTrans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK T/R - Rail/Tube (Alt: STU6NF10)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tube
    Americas - 0
    • 30000:$0.4429
    • 15000:$0.4519
    • 9000:$0.4729
    • 6000:$0.4949
    • 3000:$0.5199
    STU6NF10
    DISTI # 57P2563
    STMicroelectronicsPTD LOW VOLTAGE0
    • 10000:$0.4520
    • 2500:$0.4650
    • 1000:$0.5760
    • 500:$0.6600
    • 100:$0.7460
    • 10:$0.9720
    • 1:$1.1400
    STU6NF10
    DISTI # 511-STU6NF10
    STMicroelectronicsMOSFET N-Ch, 100V-0.22ohms 6A
    RoHS: Compliant
    3085
    • 1:$1.1400
    • 10:$0.9720
    • 100:$0.7470
    • 500:$0.6600
    • 1000:$0.5210
    • 3000:$0.4620
    • 9000:$0.4450
    画像 モデル 説明
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    Surface Mount Fuses 4.5A Slow Blow 0603 SinglFuse
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    Mfr.#: AD5272BRMZ-20-RL7

    OMO.#: OMO-AD5272BRMZ-20-RL7-ANALOG-DEVICES-INC-ADI

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    2N2906A

    Mfr.#: 2N2906A

    OMO.#: OMO-2N2906A-ON-SEMICONDUCTOR

    PNP SS GP AMP MED PWR TRANS.
    RK73H1JTTD4702F

    Mfr.#: RK73H1JTTD4702F

    OMO.#: OMO-RK73H1JTTD4702F-1090

    Thick Film Resistors - SMD 1/10watts 47Kohms 1%
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    XFMR CMC MODULE AECQ BATT MNGT
    可用性
    ストック:
    Available
    注文中:
    1985
    数量を入力してください:
    STU6NF10の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $1.14
    $1.14
    10
    $0.97
    $9.72
    100
    $0.75
    $74.70
    500
    $0.66
    $330.00
    1000
    $0.52
    $521.00
    3000
    $0.46
    $1 386.00
    9000
    $0.44
    $4 005.00
    24000
    $0.43
    $10 344.00
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