FDC3601N

Mfr. #:: FDC3601N
メーカー:: ON Semiconductor
説明:: MOSFET 2N-CH 100V 1A SSOT-6
ライフサイクル:: メーカー新製品
データシート:: FDC3601N データシート
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製品属性
属性値

メーカー: の上

製品カテゴリ: FET-アレイ

シリーズ: PowerTrenchR

包装: Digi-ReelR代替パッケージ

パーツエイリアス: FDC3601N_NL

単位重量: 0.001270 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: SOT-23-6 Thin, TSOT-23-6

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: SuperSOT-6

構成: デュアル

FETタイプ: 2 N-Channel (Dual)

パワーマックス: 700mW

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 100V

入力-静電容量-Ciss-Vds: 153pF @ 50V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 1A

Rds-On-Max-Id-Vgs: 500 mOhm @ 1A, 10V

Vgs-th-Max-Id: 4V @ 250μA

ゲートチャージ-Qg-Vgs: 5nC @ 10V

Pd-電力損失: 960 mW

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 4 ns

立ち上がり時間: 4 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 1 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 100 V

Rds-On-Drain-Source-Resistance: 500 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 11 ns

典型的なターンオン遅延時間: 8 ns

フォワード-相互コンダクタンス-最小: 3.6 S

チャネルモード: 強化

Tags: FDC360, FDC36, FDC3, FDC

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDC3601N 説明

***Semiconductor: Dual N-Channel 100V Specified PowerTrench® MOSFET 1.0A, 500mΩ

***ure Electronics: Dual N-Channel 100 V 500 mOhm SMT Specified PowerTrench Mosfet - SSOT-6

***ment14 APAC: MOSFET, DUAL, N, SMD, SSOT-6; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):500mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.6V; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:1A; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:2.6V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Market price

モデル	メーカー	説明	ストック	価格
FDC3601N DISTI # V72:2272_06298543	ON Semiconductor	100V/20V, 500/550MO, NCH, DUAL	0
FDC3601N DISTI # FDC3601NCT-ND	ON Semiconductor	MOSFET 2N-CH 100V 1A SSOT-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1503In Stock	1000:$0.2703 500:$0.3379 100:$0.4274 10:$0.5570 1:$0.6300
FDC3601N DISTI # FDC3601NDKR-ND	ON Semiconductor	MOSFET 2N-CH 100V 1A SSOT-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1503In Stock	1000:$0.2703 500:$0.3379 100:$0.4274 10:$0.5570 1:$0.6300
FDC3601N DISTI # FDC3601NTR-ND	ON Semiconductor	MOSFET 2N-CH 100V 1A SSOT-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	15000:$0.2187 6000:$0.2214 3000:$0.2378
FDC3601N DISTI # FDC3601N	ON Semiconductor	Trans MOSFET N-CH 100V 1A 6-Pin SuperSOT T/R (Alt: FDC3601N) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.0939 18000:€0.1009 12000:€0.1189 6000:€0.1459 3000:€0.1879
FDC3601N DISTI # FDC3601N	ON Semiconductor	Trans MOSFET N-CH 100V 1A 6-Pin SuperSOT T/R - Tape and Reel (Alt: FDC3601N) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1719 18000:$0.1769 12000:$0.1789 6000:$0.1809 3000:$0.1819
FDC3601N DISTI # FDC3601N	ON Semiconductor	Trans MOSFET N-CH 100V 1A 6-Pin SuperSOT T/R (Alt: FDC3601N) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
FDC3601N DISTI # 63R1456	ON Semiconductor	MOSFET Transistor, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:1A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.5ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.6V,Product Range:- RoHS Compliant: Yes	0	1:$0.2200 3000:$0.2200
FDC3601N DISTI # 82C2441	ON Semiconductor	DUAL N CHANNEL MOSFET, 100V, SUPER SOT-6,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:1A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.5ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.6V RoHS Compliant: Yes	0	1000:$0.2590 500:$0.2800 250:$0.3010 100:$0.3220 50:$0.4080 25:$0.4940 1:$0.5890
FDC3601N. DISTI # 27AC5661	Fairchild Semiconductor Corporation	FET 100V 500.0 MOHM SSOT6 ROHS COMPLIANT: YES	0	30000:$0.1720 18000:$0.1770 12000:$0.1790 6000:$0.1810 1:$0.1820
FDC3601N DISTI # 512-FDC3601N	ON Semiconductor	MOSFET Dual N-Ch 100V Spec Power Trench RoHS: Compliant	0	1:$0.5900 10:$0.4850 100:$0.3130 1000:$0.2500 3000:$0.2110 9000:$0.2040 24000:$0.1960
FDC3601N	ON Semiconductor		81000
FDC3601N DISTI # 1471035	ON Semiconductor	MOSFET, DUAL, N, SMD, SSOT-6	0	500:£0.1930 250:£0.2190 100:£0.2460 25:£0.4030 5:£0.4310
FDC3601N DISTI # 1471035RL	ON Semiconductor	MOSFET, DUAL, N, SMD, SSOT-6 RoHS: Compliant	0	9000:$0.3140 3000:$0.3250 1000:$0.3850 100:$0.4820 10:$0.7460 1:$0.9070
FDC3601N DISTI # 1471035	ON Semiconductor	MOSFET, DUAL, N, SMD, SSOT-6 RoHS: Compliant	0	9000:$0.3140 3000:$0.3250 1000:$0.3850 100:$0.4820 10:$0.7460 1:$0.9070
FDC3601N DISTI # XSKDRABV0050553	ON SEMICONDUCTOR	100V/20V, 500/550MO, NCH, DUAL MOSFET RoHS: Compliant	48000 in Stock0 on Order	48000:$0.1427 6000:$0.1529

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FDC3601N

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes