We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| IPB80N06S208ATMA1 DISTI # IPB80N06S208ATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 55V 80A TO263-3 RoHS: Compliant Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB80N06S208ATMA2 DISTI # IPB80N06S208ATMA2-ND | Infineon Technologies AG | MOSFET N-CH 55V 80A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| IPB80N06S208ATMA2 DISTI # IPB80N06S208ATMA2 | Infineon Technologies AG | Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S208ATMA2) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB80N06S208ATMA2 DISTI # SP001067884 | Infineon Technologies AG | Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R (Alt: SP001067884) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 0 |
|
| IPB80N06S208ATMA2 DISTI # 726-IPB80N06S208ATMA | Infineon Technologies AG | MOSFET N-CHANNEL_55/60V | 1000 |
|
| IPB80N06S2-08 DISTI # 726-IPB80N06S208 | Infineon Technologies AG | MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS RoHS: Compliant | 0 | |
| IPB80N06S208ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 978 |
|
| IPB80N06S208ATMA2 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 5000 |
|
| IPB80N06S2-08 | Infineon Technologies AG | POWER FIELD-EFFECT TRANSISTOR, 80A I(D), 55V, 0.0077OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 97 |
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| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: IPB80N04S2H4ATMA2 OMO.#: OMO-IPB80N04S2H4ATMA2 |
MOSFET N-CHANNEL_30/40V |
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Mfr.#: IPB80N04S4L04ATMA1 OMO.#: OMO-IPB80N04S4L04ATMA1 |
MOSFET N-CHANNEL_30/40V |
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Mfr.#: IPB80N06S3-07 OMO.#: OMO-IPB80N06S3-07 |
MOSFET N-Ch 55V 80A D2PAK-2 |
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Mfr.#: IPB80N06S2L-H5 OMO.#: OMO-IPB80N06S2L-H5 |
MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS |
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Mfr.#: IPB80N06S2L09ATMA1 |
MOSFET N-CH 55V 80A TO263-3 |
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Mfr.#: IPB80N06S2L11ATMA1 |
MOSFET N-CH 55V 80A TO263-3 |
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Mfr.#: IPB80N03S4L-03(1) OMO.#: OMO-IPB80N03S4L-03-1--1190 |
ブランドニューオリジナル |
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Mfr.#: IPB80N06S205XT OMO.#: OMO-IPB80N06S205XT-1190 |
ブランドニューオリジナル |
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Mfr.#: IPB80N06S2L-05 OMO.#: OMO-IPB80N06S2L-05-1190 |
MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS |
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Mfr.#: IPB80N06S2L06 OMO.#: OMO-IPB80N06S2L06-1190 |
N-CH 55V 80A 6mOhm TO263-3 |