QPD1015L

Mfr. #:: QPD1015L
メーカー:: Qorvo
説明:: RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN
ライフサイクル:: メーカー新製品
データシート:: QPD1015L データシート
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ECAD Model:
詳しくは:: QPD1015L 詳しくは

製品属性
属性値

Tags: QPD101, QPD10, QPD1, QPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

QPD1015L 説明

***W: RF Power Transistor, DC - 3.7 GHz, 65 W, 50 V, GaN, NI--360

***hardson RFPD: RF POWER TRANSISTOR

QPD1015L 詳しくは

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

モデル	メーカー	説明	ストック	価格
QPD1015L DISTI # 772-QPD1015L	Qorvo	RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN RoHS: Compliant	14	1:$135.0000 25:$117.0000
QPD1015L EVB DISTI # 772-QPD1015LEB	Qorvo	RF Development Tools QPD1015L 960-1215MHz Eval Board RoHS: Compliant	1	1:$875.0000

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