FDU6696

Mfr. #:: FDU6696
メーカー:: Rochester Electronics, LLC
説明:: Power Field-Effect Transistor, 13A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
ライフサイクル:: メーカー新製品
データシート:: FDU6696 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

Tags: FDU669, FDU66, FDU6, FDU

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDU6696 説明

***or: N-CHANNEL POWER MOSFET

***ser: MOSFETs 30V N-Ch PowerTrench

***el Nordic: Contact for details

***Yang: MOSFET 30V N-Ch PowerTrench - Bulk

***i-Key: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***et: 30V N-Channel PowerTrench MOSFET

***el Electronic: Power Field-Effect Transistor, 54A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3

***ser: MOSFETs 30V N-Ch PowerTrench

***i-Key: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***ark: MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Dr

***et: Trans MOSFET N-CH 30V 35A 3-Pin(3+Tab) TO-251

***ronik: N-CH 30V 35A 11mOhm TO251-3 RoHSconf

***nell: MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0088ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 38W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 35A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V

***et: MOSFET N-Ch LL UltraFET PWM Optimized

***el Electronic: Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***i-Key: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***et: MOSFET N-Ch LL UltraFET PWM Optimized

***i-Key: N-CHANNEL POWER MOSFET

***et: MOSFET N-Ch UltraFET Trench Logic Level

***el Electronic: Power Field-Effect Transistor, 50A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3

***i-Key: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

Market price

モデル	メーカー	説明	ストック	価格
FDU6696_Q DISTI # 512-FDU6696_Q	ON Semiconductor	MOSFET 30V N-Ch PowerTrench RoHS: Not compliant	0
FDU6696	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 13A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Compliant	3600	1000:$0.8300 500:$0.8700 100:$0.9100 25:$0.9500 1:$1.0200

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