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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| IPB097N08N3 G DISTI # IPB097N08N3GTR-ND | Infineon Technologies AG | MOSFET N-CH 80V 70A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB097N08N3 G DISTI # IPB097N08N3GCT-ND | Infineon Technologies AG | MOSFET N-CH 80V 70A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPB097N08N3 G DISTI # IPB097N08N3GDKR-ND | Infineon Technologies AG | MOSFET N-CH 80V 70A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPB097N08N3G DISTI # IPB097N08N3G | Infineon Technologies AG | Trans MOSFET N-CH 80V 70A 3-Pin TO-263 T/R - Bulk (Alt: IPB097N08N3G) RoHS: Not Compliant Min Qty: 676 Container: Bulk | Americas - 0 |
|
| IPB097N08N3GATMA1 DISTI # IPB097N08N3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 80V 70A 3-Pin TO-263 T/R - Bulk (Alt: IPB097N08N3GATMA1) RoHS: Compliant Min Qty: 582 Container: Bulk | Americas - 0 |
|
| IPB097N08N3 G DISTI # 726-IPB097N08N3G | Infineon Technologies AG | MOSFET N-Ch 80V 70A D2PAK-2 OptiMOS 3 RoHS: Compliant | 0 | |
| IPB097N08N3GATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 70A I(D), 80V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 15767 |
|
| IPB097N08N3G | Infineon Technologies AG | Power Field-Effect Transistor, 70A I(D), 80V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 71 |
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| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: IPB090N06N3 G OMO.#: OMO-IPB090N06N3-G |
MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3 |
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Mfr.#: IPB090N06N3GATMA1 |
MOSFET N-CH 60V 50A TO263-3 |
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Mfr.#: IPB090N06N3GS OMO.#: OMO-IPB090N06N3GS-1190 |
ブランドニューオリジナル |
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Mfr.#: IPB093N04L G OMO.#: OMO-IPB093N04L-G-1190 |
ブランドニューオリジナル |
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Mfr.#: IPB093N04LG OMO.#: OMO-IPB093N04LG-1190 |
Power Field-Effect Transistor, 46A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: IPB096N03LGATMA1 |
MOSFET N-CH 30V 35A TO-263-3 |
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Mfr.#: IPB097N08N3GS OMO.#: OMO-IPB097N08N3GS-1190 |
ブランドニューオリジナル |
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Mfr.#: IPB09N03LA |
MOSFET N-CH 25V 50A D2PAK |
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Mfr.#: IPB097N08N3 G |
IGBT Transistors MOSFET N-Ch 80V 70A D2PAK-2 OptiMOS 3 |
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Mfr.#: IPB096N03L G OMO.#: OMO-IPB096N03L-G-126 |
IGBT Transistors MOSFET N-Ch 30V 35A D2PAK-2 OptiMOS 3 |