IPD60R750E6

Mfr. #:: IPD60R750E6
メーカー:: Rochester Electronics, LLC
説明:: IGBT Transistors MOSFET N-Ch 650V 5.7A DPAK-2 CoolMOS E6
ライフサイクル:: メーカー新製品
データシート:: IPD60R750E6 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

メーカー: インフィニオン

製品カテゴリ: ICチップ

シリーズ: CoolMOS E6

包装: リール

パーツエイリアス: IPD60R750E6BTMA1 IPD60R750E6XT SP000801094

単位重量: 0.139332 oz

取り付けスタイル: SMD / SMT

商標名: CoolMOS

パッケージ-ケース: TO-252-3

テクノロジー: Si

チャネル数: 1 Channel

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 48 W

最高作動温度: + 150 C

最低作動温度: - 55 C

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 5.7 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 600 V

Rds-On-Drain-Source-Resistance: 680 mOhms

トランジスタ-極性: Nチャネル

Tags: IPD60R7, IPD60R, IPD60, IPD6, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

モデル	メーカー	説明	ストック	価格
IPD60R750E6ATMA1 DISTI # V72:2272_06384542	Infineon Technologies AG	Trans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	294	75000:$0.5069 30000:$0.5104 15000:$0.5139 6000:$0.5174 3000:$0.5209 1000:$0.5266 500:$0.6727 250:$0.7470 100:$0.7771 50:$0.9422 25:$0.9916 10:$1.0415 1:$1.3505
IPD60R750E6BTMA1 DISTI # IPD60R750E6BTMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 5.7A TO252 RoHS: Compliant Container: Tape & Reel (TR)	Limited Supply - Call
IPD60R750E6BTMA1 DISTI # IPD60R750E6BTMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 5.7A TO252-3 RoHS: Compliant Container: Cut Tape (CT)	Limited Supply - Call
IPD60R750E6BTMA1 DISTI # IPD60R750E6BTMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 5.7A TO252-3 RoHS: Compliant Container: Digi-Reel®	Limited Supply - Call
IPD60R750E6ATMA1 DISTI # IPD60R750E6ATMA1-ND	Infineon Technologies AG	MOSFET N-CH 600V 5.7A TO252 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
IPD60R750E6ATMA1 DISTI # 26195490	Infineon Technologies AG	Trans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	294	15000:$0.5524 6000:$0.5562 3000:$0.5600 1000:$0.5661 500:$0.7232 250:$0.8030 100:$0.8354 50:$1.0129 25:$1.0660 13:$1.1196
IPD60R750E6 DISTI # IPD60R750E6	Infineon Technologies AG	Trans MOSFET N-CH 600V 5.7A 3-Pin TO-252 T/R - Bulk (Alt: IPD60R750E6) RoHS: Compliant Min Qty: 715 Container: Bulk	Americas - 0	7150:$0.4439 3575:$0.4519 2145:$0.4679 1430:$0.4859 715:$0.5039
IPD60R750E6BTMA1 DISTI # IPD60R750E6BTMA1	Infineon Technologies AG	Trans MOSFET N-CH 600V 5.7A 3-Pin TO-252 T/R - Bulk (Alt: IPD60R750E6BTMA1) RoHS: Compliant Min Qty: 521 Container: Bulk	Americas - 0	5210:$0.6089 2605:$0.6199 1563:$0.6419 1042:$0.6659 521:$0.6909
IPD60R750E6ATMA1 DISTI # 22AC4485	Infineon Technologies AG	MOSFET, N-CH, 5.7A, 600V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:5.7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.68ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	1607	1000:$0.5730 500:$0.7250 250:$0.7730 100:$0.8210 50:$0.9040 25:$0.9870 10:$1.0700 1:$1.2500
IPD60R750E6 DISTI # 726-IPD60R750E6	Infineon Technologies AG	MOSFET N-Ch 650V 5.7A DPAK-2 CoolMOS E6 RoHS: Compliant	0
IPD60R750E6BTMA1 DISTI # 726-IPD60R750E6BTMA1	Infineon Technologies AG	MOSFET N-Ch 650V 5.7A DPAK-2 CoolMOS E6 RoHS: Compliant	0
IPD60R750E6ATMA1 DISTI # 726-IPD60R750E6ATMA1	Infineon Technologies AG	MOSFET N-Ch 650V 5.7A DPAK-2 RoHS: Compliant	903	1:$1.2400 10:$1.0600 100:$0.8130 500:$0.7180 1000:$0.5670 2500:$0.5030 10000:$0.4840
IPD60R750E6	Infineon Technologies AG	Power Field-Effect Transistor, 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant	40	1000:$0.4600 500:$0.4900 100:$0.5100 25:$0.5300 1:$0.5700
IPD60R750E6ATMA1 DISTI # 2764859	Infineon Technologies AG	MOSFET, N-CH, 5.7A, 600V, TO-252	1840	500:£0.5480 250:£0.5840 100:£0.6200 10:£0.8650 1:£1.0800
IPD60R750E6ATMA1 DISTI # 2764859	Infineon Technologies AG	MOSFET, N-CH, 5.7A, 600V, TO-252 RoHS: Compliant	1607	100:$1.1700 25:$1.4300 5:$1.6400

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