SPD02N60C3

Mfr. #:: SPD02N60C3
メーカー:: Rochester Electronics, LLC
説明:: Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
ライフサイクル:: メーカー新製品
データシート:: SPD02N60C3 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

メーカー: インフィニオン

製品カテゴリ: FET-シングル

シリーズ: CoolMOS C3

包装: リール

パーツエイリアス: SP000308771 SPD02N60C3BTMA1 SPD02N60C3XT

単位重量: 0.139332 oz

取り付けスタイル: SMD / SMT

商標名: CoolMOS

パッケージ-ケース: TO-252-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 25 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 12 ns

立ち上がり時間: 3 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 1.8 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 600 V

Rds-On-Drain-Source-Resistance: 3 Ohms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 68 ns

典型的なターンオン遅延時間: 6 ns

チャネルモード: 強化

Tags: SPD02N60C3, SPD02N60C, SPD02N6, SPD02N, SPD02, SPD0, SPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SPD02N60C3 説明

***ical: Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) TO-252 T/R

***p One Stop Global: Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) TO-252

***et Europe: Trans MOSFET N-CH 600V 1.8A 3-Pin TO-252 T/R

***ark: Mosfet, N Channel, 650V, 1.8A, To-252-3

***i-Key: MOSFET N-CH 650V 1.8A DPAK

***ronik: N-CH 600V 1.8A 3000mOhm TO252-3

***ponent Sense: TRA POWER SPD02N60C3 DPAK-3

***et: LOW POWER_PRICE/PERFORM

***ineon: Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

***nell: MOSFET, N, COOLMOS, D-PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:1.8A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):2.7ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:25W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Iar:1.8A; Corrente Id Max:1.8A; Corrente Idss Max:1µA; Corrente di Impulso Idm:5.4A; Dissipazione di Potenza Ptot Max:25W; Energia Max Avalanche Repetitiva:0.07mJ; Energia Singolo Impulso Avalanche Eas:50mJ; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Livello Temperatura a Piena Potenza:25°C; Modello Case Alternativo:D-PAK; No. di Transistor:1; Resistenza Stato On Max:3ohm; Temperatura di Corrente:25°C; Temperatura di Esercizio Min:-55°C

***ment14 APAC: Prices include import duty and tax. MOSFET, N, COOLMOS, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:25W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Alternate Case Style:D-PAK; Avalanche Single Pulse Energy Eas:50mJ; Current Iar:1.8A; Current Id Max:1.8A; Current Idss Max:1µA; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:3ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:25W; Pulse Current Idm:5.4A; Rate of Voltage Change dv / dt:50V/ns; Repetitive Avalanche Energy Max:0.07mJ; Termination Type:Surface Mount Device; Voltage Vds Typ:650V

Market price

モデル	メーカー	説明	ストック	価格
SPD02N60C3BTMA1 DISTI # 26943265	Infineon Technologies AG	Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	15000	10000:$0.4689 5000:$0.4909 2500:$0.5512
SPD02N60C3BTMA1 DISTI # SPD02N60C3BTMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 650V 1.8A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
SPD02N60C3BTMA1 DISTI # SPD02N60C3BTMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 650V 1.8A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SPD02N60C3BTMA1 DISTI # C1S322000355848	Infineon Technologies AG	Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	15000	2500:$0.5440
SPD02N60C3BTMA1 DISTI # 59M2072	Infineon Technologies AG	MOSFET, N CHANNEL, 650V, 1.8A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:650V,On Resistance Rds(on):2.7ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes	0
SPD02N60C3	Infineon Technologies AG	Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	6	1000:$0.4400 500:$0.4600 100:$0.4800 25:$0.5000 1:$0.5400
SPD02N60C3 DISTI # 726-SPD02N60C3	Infineon Technologies AG	MOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS C3 RoHS: Compliant	0
SPD02N60C3	Infineon Technologies AG	RoHS: Compliant	Europe - 445
SPD02N60C3BTMA1 DISTI # 1156419RL	Infineon Technologies AG	MOSFET, N, COOLMOS, D-PAK RoHS: Compliant	0	1:$1.5700 10:$1.3300 100:$1.0200 500:$0.8980 1000:$0.7080 2500:$0.6280 10000:$0.6040 25000:$0.6030
SPD02N60C3BTMA1 DISTI # 1156419	Infineon Technologies AG	MOSFET, N, COOLMOS, D-PAK RoHS: Compliant	0	1:$1.5700 10:$1.3300 100:$1.0200 500:$0.8980 1000:$0.7080 2500:$0.6280 10000:$0.6040 25000:$0.6030

画像	モデル	説明
	Mfr.#: SPD02N60C3BTMA1 OMO.#: OMO-SPD02N60C3BTMA1	MOSFET LOW POWER_LEGACY
	Mfr.#: SPD02N60S5 OMO.#: OMO-SPD02N60S5-126	IGBT Transistors MOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS S5
	Mfr.#: SPD02N50C3 OMO.#: OMO-SPD02N50C3-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET N-Ch 500V 1.8A DPAK-2 CoolMOS C3
	Mfr.#: SPD02N80C3 OMO.#: OMO-SPD02N80C3-126	IGBT Transistors MOSFET N-Ch 800V 2A DPAK-2 CoolMOS C3
	Mfr.#: SPD02N80C3BTMA1 OMO.#: OMO-SPD02N80C3BTMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 800V 2A TO-252
	Mfr.#: SPD02N50C3BTMA1 OMO.#: OMO-SPD02N50C3BTMA1-INFINEON-TECHNOLOGIES	LOW POWER_LEGACY
	Mfr.#: SPD02N60 OMO.#: OMO-SPD02N60-1190	ブランドニューオリジナル
	Mfr.#: SPD02N60C3BTMA1 OMO.#: OMO-SPD02N60C3BTMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 1.8A DPAK
	Mfr.#: SPD02N80C3. OMO.#: OMO-SPD02N80C3--1190	ブランドニューオリジナル
	Mfr.#: SPD02U60C3 OMO.#: OMO-SPD02U60C3-1190	ブランドニューオリジナル

SPD02N60C3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes