IRFM140

Mfr. #:: IRFM140
メーカー:: Infineon Technologies AG
説明:: Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-254AA - Bulk (Alt: IRFM140)
ライフサイクル:: メーカー新製品
データシート:: IRFM140 データシート
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製品属性
属性値

Tags: IRFM1, IRFM, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFM140 説明

***ineon: Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

***ure Electronics: Single N-Channel 100 V 125 W 58 nC Hexfet Transistor Flange Mount - TO-254AA

***el Electronic: Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-220AB;PD 130W;-55deg

***ure Electronics: Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3

***fin: Transistor NPN Mos IRF540/IRF540N INTERNATIONAL RECTIFIER Ampere=28 V=100 TO220

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***id Electronics: Transistor MOSFET N-Ch. 33A/100V TO220 IRF 540 N PBF

***ow.cn: Trans MOSFET N-CH Si 100V 33A 3-Pin(3+Tab) TO-220AB Full-Pak Tube

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):44mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 130 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

*** Electronics: 100V 33A RDSON 44mOHM TO- 220AB IR IRF540N Interna tional Rectifier Descrip tion: MOSFET; N-Channel; 100 V (Min.); 33 A (Max.) ; 130 W (Max.); 11 ns (Ty p.)

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***(Formerly Allied Electronics): MOSFET, Power; N-Channel; 0.052 Ohms (Max.) @ 10 V, 16 A; 100 V (Min.); 40 degC

***el Electronic: In a Tube of 25, IRFP140NPBF N-Channel MOSFET, 33 A, 100 V HEXFET, 3-Pin TO-247AC Infineon

***ure Electronics: Single N-Channel 100 V 0.052 Ohm 94 nC HEXFET® Power Mosfet - TO-247-3AC

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:100V; On Resistance Rds(on):52mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:33A; Package / Case:TO-247AC; Power Dissipation Pd:94W; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 21Milliohms;ID 36A;TO-220AB;PD 92W;gFS 36V

*** Source Electronics: Trans MOSFET N-CH Si 100V 36A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 100V 36A TO-220AB

***ure Electronics: Single N-Channel 100 V 26.5 mOhm 42 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 92 W

*** Stop Electro: Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 100V, 36A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:100V; On Resistance Rds(on):26.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:92W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:36A; Junction to Case Thermal Resistance A:1.64°C/W; On State resistance @ Vgs = 10V:26.5ohm; Package / Case:TO-220AB; Power Dissipation Pd:92W; Power Dissipation Pd:92W; Pulse Current Idm:140A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-CHANNEL 100V 0.038 OHM 35A TO-220 LOW GATE CHARGE STripFET II MOSFET

*** Source Electronics: Trans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 100V 35A TO-220

***ure Electronics: N-Channel 100 V 45 mOhm Flange Mount Power Mosfet - TO-220

***enic: 100V 35A 45´Î@10V15A 115W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***nell: MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 1

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***et: TO-220AB, SINGLE, N-CH, 100V, 36MOHM ULTRAFET TRENCH MOSFET

***ure Electronics: N-Channel 100 V 36 mOhm PowerTrench Mosfet - TO-220AB

***emi: N-Channel PowerTrench® MOSFET 100V, 32A, 36mΩ

***trelec: MOSFET Operating temperature: -55...+175 °C Housing type: TO-220 Polarity: N Power dissipation: 95 W

***et Europe: Trans MOSFET N-CH 100V 6A 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Power Field-Effect Transistor, 6A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:100V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:95W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:32A; Package / Case:TO-220AB; Power Dissipation Pd:95W; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***ical: Trans MOSFET N-CH 100V 33A 3-Pin (3+Tab) TO-220AB Rail

***ponent Stockers USA: 33 A 100 V 0.04 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***ca Corp: Power Field-Effect Transistor, 33A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Market price

モデル	メーカー	説明	ストック	価格
IRFM140 DISTI # IRFM140	Infineon Technologies AG	Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-254AA - Bulk (Alt: IRFM140) RoHS: Not Compliant Min Qty: 50 Container: Bulk	Americas - 0	50:$97.2900 52:$95.9900 102:$76.1900 250:$72.0900 500:$71.8900

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IRFM140

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes