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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| RFD10P03LSM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 10A I(D), 30V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 1492 |
|
| RFD10P03LSM9A | Fairchild Semiconductor Corporation | 2295 | ||
| RFD10P03LSM9A | Harris Semiconductor | Power Field-Effect Transistor, 10A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | Europe - 28230 |
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: RFD14N05SM OMO.#: OMO-RFD14N05SM |
MOSFET TO-252AA N-Ch Power |
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Mfr.#: RFD16N05LSM9A-CUT TAPE |
ブランドニューオリジナル |
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Mfr.#: RFD10P03L OMO.#: OMO-RFD10P03L-1190 |
MOSFET TO-251 P-Ch Powe |
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Mfr.#: RFD14N05SM9A |
MOSFET N-CH 50V 14A DPAK |
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Mfr.#: RFD16N03 OMO.#: OMO-RFD16N03-1190 |
Power Field-Effect Transistor, 16A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
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Mfr.#: RFD16N05 |
MOSFET N-CH 50V 16A I-PAK |
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Mfr.#: RFD16N05+LSM OMO.#: OMO-RFD16N05-LSM-1190 |
MOSFET N-CH 50V 16A TO-252AA |
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Mfr.#: RFD16N05LSM6A OMO.#: OMO-RFD16N05LSM6A-1190 |
ブランドニューオリジナル |
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Mfr.#: RFD16N05LSM9A |
MOSFET N-CH 50V 16A TO-252AA |
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Mfr.#: RFD17N05SM9A OMO.#: OMO-RFD17N05SM9A-1190 |
ブランドニューオリジナル |