We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| FD150R12RT4HOSA1 DISTI # V99:2348_18204841 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2KV 150A 5-Pin Tray RoHS: Compliant | 10 |
|
| FD150R12RT4HOSA1 DISTI # FD150R12RT4HOSA1-ND | Infineon Technologies AG | IGBT MODULE 1200V 150A RoHS: Compliant Min Qty: 1 Container: Bulk | 14In Stock |
|
| FD150R12RT4HOSA1 DISTI # 27577031 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2KV 150A 5-Pin Tray RoHS: Compliant | 10 |
|
| FD150R12RT4 DISTI # SP000711858 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2KV 150A 5-pin 34MM-1 (Alt: SP000711858) RoHS: Compliant Min Qty: 1 | Europe - 8 |
|
| FD150R12RT4 DISTI # FD150R12RT4 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2KV 150A 5-pin 34MM-1 (Alt: FD150R12RT4) RoHS: Compliant Min Qty: 10 | Asia - 0 |
|
| FD150R12RT4HOSA1 DISTI # FD150R12RT4HOSA1 | Infineon Technologies AG | MEDIUM POWER 34MM - Trays (Alt: FD150R12RT4HOSA1) RoHS: Compliant Min Qty: 10 Container: Tray | Americas - 0 |
|
| FD150R12RT4HOSA1 DISTI # FD150R12RT4HOSA1 | Infineon Technologies AG | MEDIUM POWER 34MM - Bulk (Alt: FD150R12RT4HOSA1) Min Qty: 9 Container: Bulk | Americas - 0 |
|
| FD150R12RT4HOSA1 DISTI # SP000711858 | Infineon Technologies AG | MEDIUM POWER 34MM (Alt: SP000711858) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| FD150R12RT4 DISTI # 84R7176 | Infineon Technologies AG | IGBT Module, 1.2KV, 150A, MODULE,Transistor Polarity:N Channel,DC Collector Current:150A,Collector Emitter Saturation Voltage Vce(on):2.05V,Power Dissipation Pd:790W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:5Pins RoHS Compliant: Yes | 0 | |
| FD150R12RT4 DISTI # 641-FD150R12RT4 | Infineon Technologies AG | IGBT Modules IGBT 1200V 150A RoHS: Compliant | 24 |
|
| FD150R12RT4HOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel RoHS: Compliant | 1183 |
|
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: FD150 OMO.#: OMO-FD150-1190 |
ブランドニューオリジナル |
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Mfr.#: FD1500AV-70 OMO.#: OMO-FD1500AV-70-1190 |
ブランドニューオリジナル |
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Mfr.#: FD1500AV-90 OMO.#: OMO-FD1500AV-90-1190 |
ブランドニューオリジナル |
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Mfr.#: FD1500BV-90DA OMO.#: OMO-FD1500BV-90DA-1190 |
ブランドニューオリジナル |
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Mfr.#: FD1500CV-90DA OMO.#: OMO-FD1500CV-90DA-1190 |
ブランドニューオリジナル |
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Mfr.#: FD150AA160 OMO.#: OMO-FD150AA160-1190 |
ブランドニューオリジナル |
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Mfr.#: FD150R12KE3 OMO.#: OMO-FD150R12KE3-1190 |
ブランドニューオリジナル |
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Mfr.#: FD150R12KT3 OMO.#: OMO-FD150R12KT3-1190 |
ブランドニューオリジナル |
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Mfr.#: FD150R12KT4 OMO.#: OMO-FD150R12KT4-1190 |
ブランドニューオリジナル |
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Mfr.#: FD150R17ME3 OMO.#: OMO-FD150R17ME3-1190 |
ブランドニューオリジナル |
