CSD17311Q5

Mfr. #:: CSD17311Q5
説明:: MOSFET N-CH 30V 100A 8SON
ライフサイクル:: メーカー新製品
データシート:: CSD17311Q5 データシート
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詳しくは:: CSD17311Q5 詳しくは CSD17311Q5 Product Details

製品属性
属性値

メーカー: テキサスインスツルメンツ

製品カテゴリ: FET-シングル

シリーズ: NexFET

包装: Digi-ReelR代替パッケージ

取り付けスタイル: SMD / SMT

商標名: NexFET

パッケージ-ケース: 8-PowerTDFN

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: 8-VSON (5x6)

構成: 独身

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 3.2W

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: 4280pF @ 15V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 32A (Ta), 100A (Tc)

Rds-On-Max-Id-Vgs: 2 mOhm @ 30A, 8V

Vgs-th-Max-Id: 1.6V @ 250μA

ゲートチャージ-Qg-Vgs: 31nC @ 4.5V

Pd-電力損失: 3.2 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 12 ns

立ち上がり時間: 18 ns

Vgs-Gate-Source-Voltage: 10 V

Id-連続-ドレイン-電流: 32 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.2 V

Rds-On-Drain-Source-Resistance: 2.3 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 33 ns

典型的なターンオン遅延時間: 12 ns

Qg-Gate-Charge: 24 nC

フォワード-相互コンダクタンス-最小: 200 S

Tags: CSD17311, CSD1731, CSD173, CSD17, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD17311Q5 説明

***as Instruments: 30V, N ch NexFET MOSFET™, single SON5x6, 2.3mOhm 8-VSON-CLIP -55 to 150

***th Star Micro: the nexfet power mosfet has been designed to minimize losses in power conversion applications and optimized for 5v gate drive applications.

***ark: N-CH NEXFET POWER MOSFET, 30V, 100A, SON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.2V ;RoHS Compliant: Yes

CSD17311Q5 詳しくは

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

モデル	説明	ストック	価格
CSD17311Q5 DISTI # V98:2334_07248764	Trans MOSFET N-CH 30V 32A 8-Pin SON EP T/R RoHS: Compliant	2500	1000:$0.8636 500:$1.0995 250:$1.2451 100:$1.2461 25:$1.5312 10:$1.5330 1:$1.7779
CSD17311Q5 DISTI # 296-27625-1-ND	MOSFET N-CH 30V 100A 8SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	16897In Stock	1000:$1.0547 500:$1.2729 100:$1.6366 10:$2.0370 1:$2.2500
CSD17311Q5 DISTI # 296-27625-6-ND	MOSFET N-CH 30V 100A 8SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	16897In Stock	1000:$1.0547 500:$1.2729 100:$1.6366 10:$2.0370 1:$2.2500
CSD17311Q5 DISTI # 296-27625-2-ND	MOSFET N-CH 30V 100A 8SON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	15000In Stock	5000:$0.9181 2500:$0.9534
CSD17311Q5 DISTI # 31003772	Trans MOSFET N-CH 30V 32A 8-Pin SON EP T/R RoHS: Compliant	2500	1000:$0.8636 500:$1.0995 250:$1.2451 100:$1.2461 25:$1.5312 10:$1.5330 8:$1.7779
CSD17311Q5 DISTI # CSD17311Q5	Trans MOSFET N-CH 30V 32A 8-Pin SON T/R - Tape and Reel (Alt: CSD17311Q5) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.9309 5000:$0.8859 10000:$0.8569 15000:$0.8279 25000:$0.8049
CSD17311Q5 DISTI # CSD17311Q5	Trans MOSFET N-CH 30V 32A 8-Pin SON T/R (Alt: CSD17311Q5) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€1.0809 5000:€0.9569 10000:€0.8569 15000:€0.8149 25000:€0.7769
CSD17311Q5	30V N-Channel NexFET&#153,Power MOSFET	5495	1000:$0.7300 750:$0.8000 500:$0.9700 250:$1.1600 100:$1.2500 25:$1.4400 10:$1.5500 1:$1.7300
CSD17311Q5 DISTI # 595-CSD17311Q5	MOSFET 30V N-Channel NexFET Power MOSFET RoHS: Compliant	2108	1:$1.8900 10:$1.6100 100:$1.2900 500:$1.1300 1000:$0.9310 2500:$0.8670
CSD17311Q5	Power Field-Effect Transistor, 32A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	10192	1000:$0.9600 500:$1.0100 100:$1.0500 25:$1.0900 1:$1.1800
CSD17311Q5 DISTI # C1S746201285014	Trans MOSFET N-CH 30V 32A 8-Pin SON EP T/R RoHS: Compliant	2500	250:$1.2451 100:$1.2461 25:$1.5312 10:$1.5330

画像	モデル	説明
	Mfr.#: CSD17382F4T OMO.#: OMO-CSD17382F4T	MOSFET 30V, N ch NexFET MOSFETG , single LGA 1.0 x 0.6mm, 67mOhm 3-PICOSTAR -55 to 150
	Mfr.#: CSD17381F4T OMO.#: OMO-CSD17381F4T	MOSFET 30V,N-Ch FemtoFET MOSFET
	Mfr.#: CSD17559Q5T OMO.#: OMO-CSD17559Q5T	MOSFET 30V N-Ch NexFET Pwr MOSFET
	Mfr.#: CSD17322Q5A OMO.#: OMO-CSD17322Q5A	MOSFET 30V,NCh Nex FET Pwr MOSFET
	Mfr.#: CSD17308 OMO.#: OMO-CSD17308-TEXAS-INSTRUMENTS	ブランドニューオリジナル
	Mfr.#: CSD17571Q2/1751 OMO.#: OMO-CSD17571Q2-1751-TEXAS-INSTRUMENTS	ブランドニューオリジナル
	Mfr.#: CSD17585F5 . . . OMO.#: OMO-CSD17585F5--TEXAS-INSTRUMENTS	ブランドニューオリジナル
	Mfr.#: CSD17C00A OMO.#: OMO-CSD17C00A-TEXAS-INSTRUMENTS	ブランドニューオリジナル
	Mfr.#: CSD17577Q3AT OMO.#: OMO-CSD17577Q3AT-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 35A 8VSON
	Mfr.#: CSD17573Q5B OMO.#: OMO-CSD17573Q5B-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 100A 8VSON

CSD17311Q5

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes