IPB60R125CP

Mfr. #:: IPB60R125CP
メーカー:: Infineon Technologies
説明:: Darlington Transistors MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP
ライフサイクル:: メーカー新製品
データシート:: IPB60R125CP データシート
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ECAD Model:
詳しくは:: IPB60R125CP 詳しくは

製品属性
属性値

メーカー: インフィニオン

製品カテゴリ: FET-シングル

シリーズ: CoolMOS CP

包装: リール

パーツエイリアス: IPB60R125CPATMA1 IPB60R125CPXT SP000297368

単位重量: 0.139332 oz

取り付けスタイル: SMD / SMT

商標名: CoolMOS

パッケージ-ケース: TO-252-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 208 W

最高作動温度: + 175 C

最低作動温度: - 55 C

立ち下がり時間: 5 ns

立ち上がり時間: 5 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 25 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 600 V

Vgs-th-Gate-Source-Threshold-Voltage: 3.5 V

Rds-On-Drain-Source-Resistance: 125 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 50 ns

典型的なターンオン遅延時間: 15 ns

Qg-Gate-Charge: 53 nC

チャネルモード: 強化

Tags: IPB60R125CP, IPB60R125, IPB60R12, IPB60R1, IPB60R, IPB60, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB60R125CP 詳しくは

CoolMOS™ N-Channel MOSFETs: Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

モデル	メーカー	説明	ストック	価格
IPB60R125CPATMA1 DISTI # IPB60R125CPATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 25A TO263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	76In Stock	500:$4.1357 100:$5.1073 10:$6.2280 1:$6.9800
IPB60R125CPATMA1 DISTI # IPB60R125CPATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 25A TO263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	76In Stock	500:$4.1357 100:$5.1073 10:$6.2280 1:$6.9800
IPB60R125CPATMA1 DISTI # IPB60R125CPATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 25A TO263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	1000:$3.3863
IPB60R125CP DISTI # IPB60R125CP	Infineon Technologies AG	Trans MOSFET N-CH 650V 25A 3-Pin TO-263 T/R (Alt: IPB60R125CP) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 5000	1000:$3.6648 2000:$3.4903 3000:$3.4358 5000:$3.2819 10000:$3.2337 25000:$3.1413 50000:$3.0540
IPB60R125CP DISTI # SP000297368	Infineon Technologies AG	Trans MOSFET N-CH 650V 25A 3-Pin TO-263 T/R (Alt: SP000297368) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€2.9900 2000:€2.8900 4000:€2.7900 6000:€2.5900 10000:€2.3900
IPB60R125CPXT DISTI # IPB60R125CPATMA1	Infineon Technologies AG	Trans MOSFET N-CH 600V 25A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R125CPATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$3.0900 2000:$2.9900 4000:$2.8900 6000:$2.7900 10000:$2.6900
IPB60R125CPATMA1 DISTI # 33P7133	Infineon Technologies AG	MOSFET, N CHANNEL, 650V, 25A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.11ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes	0	1:$5.8300 10:$4.9500 25:$4.7300 50:$4.5100 100:$4.2900 250:$4.0700 500:$3.6600
IPB60R125CPATMA1 DISTI # 726-IPB60R125CPATMA1	Infineon Technologies AG	MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP RoHS: Compliant	0	1:$5.8300 10:$4.9500 100:$4.2900 250:$4.0700 500:$3.6600 1000:$3.0800
IPB60R125CP DISTI # 726-IPB60R125CP	Infineon Technologies AG	MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP RoHS: Compliant	0
IPB60R125CP DISTI # TMOSP9719	Infineon Technologies AG	CoolMOS 600V25A 125mOhm TO263 RoHS: Compliant	Stock DE - 0Stock US - 0	1000:$4.5900
IPB60R125CP	Infineon Technologies AG	INSTOCK	594
IPB60R125CPATMA1 DISTI # 1664016	Infineon Technologies AG	MOSFET, N, TO-263 RoHS: Compliant	0	1:£4.9300 10:£3.7900 100:£3.2800 250:£3.1100 500:£2.8000
IPB60R125CP	Infineon Technologies AG	600V,25A,N-Channel MOSFET	500	1:$4.8300 100:$4.0300 500:$3.5500 1000:$3.4500

画像	モデル	説明
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	Mfr.#: IPB60R099CP OMO.#: OMO-IPB60R099CP	MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP
	Mfr.#: IPB60R055CFD7ATMA1 OMO.#: OMO-IPB60R055CFD7ATMA1	MOSFET
	Mfr.#: IPB60R210CFD7ATMA1 OMO.#: OMO-IPB60R210CFD7ATMA1	MOSFET
	Mfr.#: IPB60R299CPATMA1 OMO.#: OMO-IPB60R299CPATMA1	MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CP
	Mfr.#: IPB60R600P6ATMA1 OMO.#: OMO-IPB60R600P6ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH TO263-3
	Mfr.#: IPB60R180P7ATMA1-CUT TAPE OMO.#: OMO-IPB60R180P7ATMA1-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: IPB60R125C6ATMA1 OMO.#: OMO-IPB60R125C6ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 30A TO263
	Mfr.#: IPB60R380C6 (6R380C6) OMO.#: OMO-IPB60R380C6-6R380C6--1190	ブランドニューオリジナル
	Mfr.#: IPB60R385CPXT OMO.#: OMO-IPB60R385CPXT-1190	ブランドニューオリジナル

IPB60R125CP

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes