FDD3580

Mfr. #:: FDD3580
メーカー:: ON Semiconductor
説明:: MOSFET N-CH 80V 7.7A D-PAK
ライフサイクル:: メーカー新製品
データシート:: FDD3580 データシート
配達:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: FDD3580 Datasheet FDD3580 Datasheet (P4-P5)
ECAD Model:

製品属性
属性値

Tags: FDD35, FDD3, FDD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDD3580 説明

***Yang: N-Channel 80V 7.7A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount D-PAK (TO-252AA) - Bulk

***i-Key: MOSFET N-CH 80V 7.7A D-PAK

***ser: MOSFETs 80V N-Ch PowerTrench

***el Nordic: Contact for details

***et: N-Channel 80V 10A (Ta) 3.4W (Ta), 69W (Tc) Surface Mount TO-252

***i-Key: MOSFET N-CH 80V 10A D-PAK

***ser: MOSFETs 80V N-Ch PowerTrench

***el Nordic: Contact for details

***p One Stop Global: Trans MOSFET P-CH 100V 9A Automotive 3-Pin(2+Tab) TO-252 T/R

***ure Electronics: Single P-Channel 100 V 300 mOhm 8.4 nC 42 W Silicon SMT Mosfet - TO-252-3

***ment14 APAC: MOSFET, P-CH, -100V, -9A, TO252; Transistor Polarity:P Channel; Continuous Drain Current Id:-9A; Source Voltage Vds:-100V; On Resistance

***nell: MOSFET, P-CH, -100V, -9A, TO252; Transistor Polarity: P Channel; Continuous Drain Current Id: -9A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.19ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 42W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ark: TO-252AA, SINGLE, N-CH, 100V, 36MOHM ULTRAFET TRENCH MOSFET / TAPE REEL

***p One Stop: Trans MOSFET N-CH 100V 5.5A Automotive 3-Pin(2+Tab) TO-252AA T/R

***emi: PowerTrench® MOSFET, N-Channel, 100V, 32A, 36mΩ

***ure Electronics: Single N-Channel 100 V 160 W 28 nC PowerTrench Surface Mount Mosfet - TO-263-3

***r Electronics: Power Field-Effect Transistor, 5.5A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***el Electronic: Terminal Blocks - Accessories - Wire Ferrules Non-Insulated 4 Weeks Single Wire 18 AWG 1.00mm2 Not Applicable 6.00mm 6mm Terminals 18AWG NON-INSL

***o-Tech: Single N-Channel 100 V 48 W 25 nC Hexfet Power Mosfet Surface Mount - TO-252AA

***essParts.Net: INTERNATIONAL RECTIFIER IRFR120NTRPBF / MOSFET N-CH 100V 9.4A DPAK ESD IR

***(Formerly Allied Electronics): MOSFET, 100V, 9.1A, 210 mOhm, 16.7 nC Qg, D-Pak

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***ment14 APAC: MOSFET, N-CH, 100V, 9.4A, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Source Voltage Vds:100V; On Resistance

***roFlash: Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***nell: MOSFET, N-CH, 100V, 9.4A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.4A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.21ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 48W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***(Formerly Allied Electronics): MOSFET; N Ch.; Automotive; 100V; 8.7A; 190 MOHM; 6.9 NC QG; D-PAK; Pb-Free

***ure Electronics: Single N-Channel 100 V 190 mOhm 6.9 nC HEXFET® Power Mosfet - TO-252AA

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***roFlash: Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Lighting LED

***nell: MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.7A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.19ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 35W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 8.7A; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V

Market price

モデル	メーカー	説明	ストック	価格
FDD3580 DISTI # FDD3580-ND	ON Semiconductor	MOSFET N-CH 80V 7.7A D-PAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
FDD3580 DISTI # 512-FDD3580	ON Semiconductor	MOSFET 80V N-Ch PowerTrench RoHS: Compliant	0
FDD3580	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 7.7A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant	8500	1000:$0.8700 500:$0.9100 100:$0.9500 25:$0.9900 1:$1.0700
FDD3580	Fairchild Semiconductor Corporation	7.7 A, 80 V, 0.029 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252	76	72:$0.4900 15:$0.7000 1:$1.4000

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	Mfr.#: FDD4685-F085P OMO.#: OMO-FDD4685-F085P-ON-SEMICONDUCTOR	PMOS DPAK 40V 27 MOHM
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	Mfr.#: FDD8647L-CUT TAPE OMO.#: OMO-FDD8647L-CUT-TAPE-1190	ブランドニューオリジナル

FDD3580

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes