IRF9Z34NLPBF

Mfr. #:: IRF9Z34NLPBF
メーカー:: Infineon Technologies
説明:: Darlington Transistors MOSFET MOSFT PCh -55V -19A 100mOhm 23.3nC
ライフサイクル:: メーカー新製品
データシート:: IRF9Z34NLPBF データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

メーカー: IR

製品カテゴリ: FET-シングル

包装: チューブ

単位重量: 0.084199 oz

取り付けスタイル: スルーホール

パッケージ-ケース: I2PAK-3

テクノロジー: Si

チャネル数: 1 Channel

トランジスタタイプ: 1 P-Channel

Pd-電力損失: 68 W

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: - 19 A

Vds-ドレイン-ソース-ブレークダウン-電圧: - 55 V

Rds-On-Drain-Source-Resistance: 100 mOhms

トランジスタ-極性: Pチャネル

Qg-Gate-Charge: 23.3 nC

Tags: IRF9Z34N, IRF9Z34, IRF9Z3, IRF9Z, IRF9, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF9Z34NLPBF 説明

***ied Electronics & Automation: IRF9Z34NLPBF P-channel MOSFET Transistor, 14 A, 55 V, 3-Pin TO-262

***ernational Rectifier: -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

***ical: Trans MOSFET P-CH 55V 19A 3-Pin(3+Tab) TO-262

***Components: MOSFET P-CHANNEL HEXFET 55V 19A TO262

***i-Key: MOSFET P-CH 55V 19A TO-262

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-55V; Continuous Drain Current, Id:-19A; On Resistance, Rds(on):100mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-262 ;RoHS Compliant: Yes

***ment14 APAC: Prices include import duty and tax. P CHANNEL MOSFET, -55V, 19A, TO-262; Tra; P CHANNEL MOSFET, -55V, 19A, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:-19A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; MSL:-

***nell: MOSFET, CA-P, -55V, -19A, TO-262-3; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-19A; Tensione Drain Source Vds:-55V; Resistenza di Attivazione Rds(on):0.1ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-4V; Dissipazione di Potenza Pd:68W; Modello Case Transistor:TO-262; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HEXFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 4 - 72 ore; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

Market price

モデル	メーカー	説明	ストック	価格
IRF9Z34NLPBF DISTI # V99:2348_13889926	Infineon Technologies AG	Trans MOSFET P-CH 55V 19A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant	639	100:$0.9713 25:$1.0502 10:$1.1822 1:$1.3531
IRF9Z34NLPBF DISTI # IRF9Z34NLPBF-ND	Infineon Technologies AG	MOSFET P-CH 55V 19A TO-262 RoHS: Compliant Min Qty: 650 Container: Tube	Limited Supply - Call
IRF9Z34NLPBF DISTI # 26198084	Infineon Technologies AG	Trans MOSFET P-CH 55V 19A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant	639	100:$0.9728 25:$1.0537 11:$1.1888
IRF9Z34NLPBF DISTI # 19K8339	Infineon Technologies AG	P CHANNEL MOSFET, -55V, 19A, TO-262,Transistor Polarity:P Channel,Continuous Drain Current Id:-19A,Drain Source Voltage Vds:-55V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-4V,MSL:- RoHS Compliant: Yes	0
IRF9Z34NLPBF DISTI # 942-IRF9Z34NLPBF	Infineon Technologies AG	MOSFET MOSFT PCh -55V -19A 100mOhm 23.3nC RoHS: Compliant	0
IRF9Z34NLPBF DISTI # IRF9Z34NLPBF	Infineon Technologies AG	Transistor: P-MOSFET,unipolar,-55V,-19A,68W,TO262	47	1:$0.9700 3:$0.8400 10:$0.7900 100:$0.7300
IRF9Z34NLPBF	International Rectifier	RoHS: Compliant	Europe - 700
IRF9Z34NLPBF DISTI # C1S322000488094	Infineon Technologies AG	MOSFETs RoHS: Compliant	639	100:$0.9728 25:$1.0537 10:$1.1888
IRF9Z34NLPBF DISTI # 2576890	Infineon Technologies AG	MOSFET, P-CH, -55V, -19A, TO-262-3 RoHS: Compliant	0	1:$2.6100 10:$2.1800 100:$1.6700 250:$1.4200 500:$1.2300 1000:$1.1700
IRF9Z34NLPBF. DISTI # 1162958	Infineon Technologies AG	P CHANNEL MOSFET, -55V, 19A, TO-262 RoHS: Compliant	0	1:$2.9700 10:$2.4600 100:$1.9200 500:$1.6200 1000:$1.4200 2500:$1.3200

画像	モデル	説明
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	Mfr.#: IRF9Z34NSTRLPBF OMO.#: OMO-IRF9Z34NSTRLPBF	MOSFET MOSFT PCh -55V 19A 100mOhm 23.3nC
	Mfr.#: IRF9Z34PBF OMO.#: OMO-IRF9Z34PBF	MOSFET P-CH -60V HEXFET MOSFET
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	Mfr.#: IRF9Z34NSPBF OMO.#: OMO-IRF9Z34NSPBF	MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC
	Mfr.#: IRF9Z30 OMO.#: OMO-IRF9Z30-VISHAY	MOSFET P-CH 50V 18A TO-220AB
	Mfr.#: IRF9Z34N OMO.#: OMO-IRF9Z34N-1190	MOSFET Transistor, P-Channel, TO-220AB
	Mfr.#: IRF9Z34NPBF C OMO.#: OMO-IRF9Z34NPBF-C-1190	ブランドニューオリジナル
	Mfr.#: IRF9Z34NPBF-M OMO.#: OMO-IRF9Z34NPBF-M-1190	ブランドニューオリジナル
	Mfr.#: IRF9Z34NSPBF OMO.#: OMO-IRF9Z34NSPBF-INFINEON-TECHNOLOGIES	Darlington Transistors MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC

IRF9Z34NLPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes