FQPF6N60C

Mfr. #:: FQPF6N60C
メーカー:: ON Semiconductor
説明:: MOSFET N-CH 600V 5.5A TO-220F
ライフサイクル:: メーカー新製品
データシート:: FQPF6N60C データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

Tags: FQPF6N60C, FQPF6N6, FQPF6N, FQPF6, FQPF, FQP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FQPF6N60C 説明

***o-Tech: MOSFET N-Channel 600V 5.5A TO220F

*** Source Electronics: MOSFET N-CH 600V 5.5A TO-220F

***ser: MOSFETs N-CH/600V/6A/QFET

***ark: MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:5.5A; Resistance, Rds On:2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220F; Termination ;RoHS Compliant: Yes

***nell: MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:5.5A; Resistance, Rds On:2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220F; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:22A; Power Dissipation:40W; Power, Pd:40W; Transistors, No. of:1; Voltage, Vds Max:600V

***rchild Semiconductor: These N-Channel enhancement mode power field effect transistors are produced using Fairchild.s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

***ment14 APAC: Prices include import duty and tax. MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:40W; Transistor Case Style:TO-220F; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (15-Jun-2015); Current Id Max:5.5A; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:22A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

Market price

モデル	メーカー	説明	ストック	価格
FQPF6N60C DISTI # FQPF6N60C-ND	ON Semiconductor	MOSFET N-CH 600V 5.5A TO-220F RoHS: Compliant Min Qty: 1000 Container: Tube	Limited Supply - Call
FQPF6N60C DISTI # 512-FQPF6N60C	ON Semiconductor	MOSFET N-CH/600V/6A/QFET RoHS: Compliant	0
FQPF6N60C	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 5.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	6057	1000:$0.6500 500:$0.6800 100:$0.7100 25:$0.7400 1:$0.7900
FQPF6N60C	Fairchild Semiconductor Corporation	5.5A, 600V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	30	12:$1.8600 3:$2.3250 1:$2.7900
FQPF6N60C DISTI # 1095093	ON Semiconductor	MOSFET, N, TO-220F RoHS: Compliant	0	250:$0.9730 100:$1.1500 25:$1.6000 1:$1.9100

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