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IRF630NPBF

IRF630NPBF
Mfr. #:
IRF630NPBF
メーカー:
Infineon Technologies
説明:
MOSFET N-CH 200V 9.3A TO-220AB
ライフサイクル:
メーカー新製品
データシート:
IRF630NPBF データシート
配達:
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支払い:
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ECAD Model:
詳しくは:
IRF630NPBF 詳しくは
製品属性
属性値
メーカー
IR
製品カテゴリ
FET-シングル
包装
チューブ
単位重量
0.211644 oz
取り付けスタイル
スルーホール
パッケージ-ケース
TO-220-3
テクノロジー
Si
チャネル数
1 Channel
構成
独身
トランジスタタイプ
1 N-Channel
Pd-電力損失
82 W
最高作動温度
+ 175 C
最低作動温度
- 55 C
立ち下がり時間
15 ns
立ち上がり時間
14 ns
Vgs-Gate-Source-Voltage
20 V
Id-連続-ドレイン-電流
9.3 A
Vds-ドレイン-ソース-ブレークダウン-電圧
200 V
Rds-On-Drain-Source-Resistance
300 mOhms
トランジスタ-極性
Nチャネル
典型的なターンオフ遅延時間
27 ns
典型的なターンオン遅延時間
7.9 ns
Qg-Gate-Charge
23.3 nC
フォワード-相互コンダクタンス-最小
4.9 S
チャネルモード
強化
Tags
IRF630NP, IRF630N, IRF630, IRF63, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
モデル メーカー 説明 ストック 価格
IRF630NPBF
DISTI # V36:1790_13890561		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		2946
  • 1000:$0.3602
  • 500:$0.4242
  • 100:$0.4979
  • 10:$0.6250
  • 1:$0.7082
IRF630NPBF
DISTI # V99:2348_13890561		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		707
  • 1000:$0.3602
  • 500:$0.4242
  • 100:$0.4979
  • 10:$0.6250
  • 1:$0.7082
IRF630NPBF
DISTI # IRF630NPBF-ND		Infineon Technologies AGMOSFET N-CH 200V 9.3A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		639In Stock
  • 1000:$0.4125
  • 500:$0.5225
  • 100:$0.6738
  • 10:$0.8530
  • 1:$0.9600
IRF630NPBF
DISTI # 21061767		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		11530
  • 1000:$0.3004
  • 500:$0.3445
  • 100:$0.3877
IRF630NPBF
DISTI # 27128682		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		2946
  • 1000:$0.3602
  • 500:$0.4242
  • 100:$0.4979
  • 25:$0.6250
IRF630NPBF
DISTI # 30349950		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		707
  • 500:$0.4242
  • 100:$0.4979
  • 23:$0.6250
IRF630NPBF
DISTI # IRF630NPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF630NPBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 1317
  • 1:$0.4849
  • 10:$0.4569
  • 25:$0.4559
  • 50:$0.4539
  • 100:$0.4039
  • 500:$0.3589
  • 1000:$0.3129
IRF630NPBF
DISTI # IRF630NPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB (Alt: IRF630NPBF)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    IRF630NPBF
    DISTI # SP001564792    		Infineon Technologies AGTrans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB (Alt: SP001564792)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€0.4839
    • 10:€0.4519
    • 25:€0.4509
    • 50:€0.4499
    • 100:€0.3989
    • 500:€0.3479
    • 1000:€0.3159
    IRF630NPBF
    DISTI # 63J7338    		Infineon Technologies AGN CHANNEL MOSFET, 200V, 9.3A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:9.3A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes355
    • 1:$1.0000
    • 10:$0.8600
    • 100:$0.6750
    • 500:$0.6040
    • 1000:$0.4900
    • 2500:$0.4420
    • 10000:$0.4270
    IRF630NPBF.
    DISTI # 26AC0605    		Infineon Technologies AGN CHANNEL MOSFET, 200V, 9.3A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:9.3A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes0
    • 1:$1.0200
    • 10:$0.8770
    • 100:$0.6890
    • 500:$0.6040
    • 1000:$0.4900
    • 2500:$0.4420
    • 10000:$0.4270
    IRF630NPBF
    DISTI # 70017265    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.3Ohm,ID 9.3A,TO-220AB,PD 82W,VGS +/-20V
    RoHS: Compliant    		194
    • 1:$0.8450
    • 10:$0.7450
    • 100:$0.6500
    • 500:$0.5630
    • 1000:$0.4970
    IRF630NPBF
    DISTI # 942-IRF630NPBF    		Infineon Technologies AGMOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
    RoHS: Compliant    		6088
    • 1:$0.8300
    • 10:$0.7000
    • 100:$0.5380
    • 500:$0.4760
    • 1000:$0.3750
    • 2000:$0.3330
    IRF630NPBFInfineon Technologies AGPower Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		45
    • 1000:$0.2900
    • 500:$0.3100
    • 100:$0.3200
    • 25:$0.3300
    • 1:$0.3600
    IRF630NPBFInfineon Technologies AGSingle N-Channel 200 V 0.3 Ohm 35 nC HEXFET Power Mosfet - TO-220-3
    RoHS: Compliant    		10757Tube
    • 30:$0.3850
    • 300:$0.3450
    • 1750:$0.2950
    IRF630NPBF
    DISTI # 5430068    		Infineon Technologies AGMOSFET N-CHANNEL 200V 9.3A TO220AB, EA4885
    • 1:£2.0000
    • 20:£0.4300
    • 25:£0.4000
    IRF630NPBF
    DISTI # 9195025    		Infineon Technologies AGMOSFET N-CHANNEL 200V 9.3A TO220AB, TU450
    • 50:£0.4440
    • 250:£0.3770
    • 1000:£0.2970
    • 2500:£0.2640
    IRF630NPBFInternational Rectifier9.3A, 200V, 0.3OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB29
    • 28:$0.5000
    • 6:$0.7500
    • 1:$1.0000
    IRF630NPBF
    DISTI # IRF630NPBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,9.5A,82W,TO220AB807
    • 1:$0.7900
    • 3:$0.5240
    • 10:$0.4217
    • 100:$0.3603
    IRF630NPBF
    DISTI # IRF630NPBF    		Infineon Technologies AGN-Ch 200V 9,3A 82W 0,3R TO220AB
    RoHS: Compliant    		3000
    • 10:€0.5880
    • 50:€0.3480
    • 200:€0.2880
    • 500:€0.2775
    IRF630NPBFInfineon Technologies AGINSTOCK1748
      IRF630NPBF
      DISTI # XSLY00000000764      		INFINEON/IRTO-220AB
      RoHS: Compliant      		14076
      • 2350:$0.3029
      • 14076:$0.2827
      IRF630NPBF
      DISTI # XSFP00000008771      		Infineon Technologies AGPower Field-Effect Transistor, 13AI(D),30V,0.011ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,MS-012AA
      RoHS: Compliant      		8518
      • 300:$0.5133
      • 8518:$0.4812
      IRF630NPBF
      DISTI # C1S322000599628      		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		3033
      • 1000:$0.3602
      • 500:$0.4242
      • 100:$0.4979
      • 10:$0.6250
      IRF630NPBF
      DISTI # C1S327400157735      		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		3950
      • 100:$0.6930
      • 50:$0.7940
      • 10:$1.1800
      • 5:$1.3800
      IRF630NPBF
      DISTI # C1S322000481417      		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		11530
      • 1000:$0.4610
      • 500:$0.5020
      • 100:$0.6110
      • 50:$0.6850
      • 25:$0.7540
      • 5:$1.8800
      IRF630NPBF
      DISTI # 8648344      		Infineon Technologies AGMOSFET, N, 200V, 9.5A, TO-220
      RoHS: Compliant      		2509
      • 5:£0.4390
      • 25:£0.4080
      • 100:£0.3970
      • 250:£0.3850
      • 500:£0.3270
      IRF630NPBFInfineon Technologies AG200V,300m,9.3A,N-Channel Power MOSFET800
      • 1:$0.5800
      • 100:$0.4900
      • 500:$0.4300
      • 1000:$0.4200
      IRF630NPBF
      DISTI # 8648344      		Infineon Technologies AGMOSFET, N, 200V, 9.5A, TO-220
      RoHS: Compliant      		2794
      • 1:$1.3800
      • 10:$1.1800
      • 100:$0.8990
      • 500:$0.7950
      • 1000:$0.6270
      • 2000:$0.5570
      画像 モデル 説明
      IRF634STRRPBF

      Mfr.#: IRF634STRRPBF

      OMO.#: OMO-IRF634STRRPBF

      		 MOSFET N-Chan 250V 8.1 Amp
      IRF630NSTRRPBF

      Mfr.#: IRF630NSTRRPBF

      OMO.#: OMO-IRF630NSTRRPBF

      		 MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC
      IRF634B-FP001

      Mfr.#: IRF634B-FP001

      OMO.#: OMO-IRF634B-FP001-ON-SEMICONDUCTOR

      		 MOSFET N-CH 250V 8.1A TO-220
      IRF630NSTRR

      Mfr.#: IRF630NSTRR

      OMO.#: OMO-IRF630NSTRR-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 200V 9.3A D2PAK
      IRF630STRPBF

      Mfr.#: IRF630STRPBF

      OMO.#: OMO-IRF630STRPBF-1190

      		 ブランドニューオリジナル
      IRF633A

      Mfr.#: IRF633A

      OMO.#: OMO-IRF633A-1190

      		 ブランドニューオリジナル
      IRF634B,IRF634A

      Mfr.#: IRF634B,IRF634A

      OMO.#: OMO-IRF634B-IRF634A-1190

      		 ブランドニューオリジナル
      IRF634B,IRF634FP,IRF640,

      Mfr.#: IRF634B,IRF634FP,IRF640,

      OMO.#: OMO-IRF634B-IRF634FP-IRF640--1190

      		 ブランドニューオリジナル
      IRF630NSPBF

      Mfr.#: IRF630NSPBF

      OMO.#: OMO-IRF630NSPBF-INFINEON-TECHNOLOGIES

      		 Darlington Transistors MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC
      IRF630STRRPBF

      Mfr.#: IRF630STRRPBF

      OMO.#: OMO-IRF630STRRPBF-VISHAY

      		 IGBT Transistors MOSFET N-Chan 200V 9.0 Amp
      可用性
      ストック:
      Available
      注文中:
      4500
      数量を入力してください:
      IRF630NPBFの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格（USD）
      量
      単価
      小計金額
      1
      $0.38
      $0.38
      10
      $0.36
      $3.56
      100
      $0.34
      $33.75
      500
      $0.32
      $159.40
      1000
      $0.30
      $300.00
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