2SK2632LS

Mfr. #:: 2SK2632LS
メーカー:: Rochester Electronics, LLC
説明:: Power Field-Effect Transistor, 2.5A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ライフサイクル:: メーカー新製品
データシート:: 2SK2632LS データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

メーカー: 三洋

製品カテゴリ: FET-シングル

Tags: 2SK2632L, 2SK2632, 2SK263, 2SK26, 2SK2, 2SK

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SK2632LS 説明

***et: Silicon MOSFET N Channel Enhancement 800V 2.5A 3-Pin TO-220 Through Hole

***ical: Trans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) TO-220FI

***nell: MOSFET, N CH 800V 2.5A TO220F; Transistor Type:Switching; On State Resistance:4.8ohm; Power Dissipation:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FI; Case Style:TO-220FI; Cont Current Id:2.5A; Termination Type:Through Hole; Transistor Polarity:N; Typ Voltage Vds:800V; Typ Voltage Vgs th:5.5V; Voltage Vgs Rds on Measurement:15V

***emi: Power MOSFET, N-Channel, QFET®, 800 V, 3.0 A, 4.8 Ω, TO-220F

***Yang: Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube

***enic: 800V 3A 39W 4.8´Î@10V1.5A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):4.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:39W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:39W; Power Dissipation Pd:39W; Pulse Current Idm:12A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***icroelectronics: N-CHANNEL 800V - 3 OHM - 3A TO-220FP Zener-Protected SuperMESH(TM) Power MOSFET

***et: Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220FP Tube

***enic: 800V 3A 3.5´Î@10V1.5A 25W 4.5V@50Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***et: Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220F Rail

***emi: N-Channel QFET® MOSFET 800V, 3A, 4.8Ω

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***icroelectronics: N-CHANNEL 800V - 3.8 Ohm - 2.5A TO-220FP Zener-Protected SuperMESH™ Power MOSFET

*** Source Electronics: Trans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 800V 2.5A TO220FP

***enic: 800V 2.5A 25W 4.5´Î@10V1.25A 4.5V@50Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

***ark: MOSFET, N, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:25W RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 2.5A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ure Electronics: N-Channel 900 V 4.8 Ohm Flange Mount SuperMESH Power Mosfet - TO-220FP

***ical: Trans MOSFET N-CH 900V 3A 3-Pin(3+Tab) TO-220FP Tube

***r Electronics: Power Field-Effect Transistor, 3A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:900V; On Resistance Rds(on):4.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3A; On State resistance @ Vgs = 10V:4.8ohm; Package / Case:TO-220FP; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:12A; Termination Type:Through Hole; Voltage Vds Typ:900V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

***emi: N-Channel Power MOSFET, SUPERFET® II, 800 V, 2.6 A, 2.25 Ω, TO-220F

***Yang: Trans MOSFET N-CH 800V 2.6A 3-Pin TO-220F Tube - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 3.5A I(D), 800V, 2.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.

Market price

モデル	メーカー	説明	ストック	価格
2SK2632LS-MG5	ON Semiconductor	RoHS: Not Compliant	15	1000:$1.5200 500:$1.5900 100:$1.6600 25:$1.7300 1:$1.8600
2SK2632LS-CB11	ON Semiconductor	RoHS: Not Compliant	300
2SK2632LS	SANYO Semiconductor Co Ltd	Power Field-Effect Transistor, 2.5A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant	77	1000:$1.1800 500:$1.2400 100:$1.2900 25:$1.3500 1:$1.4500

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2SK2632LS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes